Product Specification www.jmnic.com
Silicon PNP Power Transistors
2SA1075 2SA1076
DESCRIPTION
With MT-200 package
Complement to type 2SC2525,2SC2526
Fast switching speed
Excellent safe operating area
APPLICATIONS
High frequency power amplifiers
Audio power amplifiers
Switching regulators
DC-DC converters
PINNING(see Fig.2)
PIN DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL PARAMETER
CONDITIONS VALUE
UNIT
2SA1075
-120 V
V
CBO
Collector-base voltage
2SA1076
Open emitter
-160 V
2SA1075
-120 V
V
CEO
Collector-emitter voltage
2SA1076
Open base
-160 V
V
EBO
Emitter-base voltage
Open collector
-7
V
I
C
Collector current
-12
A
P
C
Collector power dissipation
T
C
=25
120 W
T
j
Junction
temperature
150
T
stg
Storage
temperature
-65~150
JM
n
ic
Product Specification www.jmnic.com
JM
n
ic
Silicon PNP Power Transistors
2SA1075 2SA1076
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2SA1075
-120
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA1076
I
C
=-1mA ;R
BE
=
-160
V
2SA1075
-120
V
(BR)CBO
Collector-base
breakdown voltage
2SA1076
I
C
=-50
A; I
E
=0
-160
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-50
A; I
C
=0
-7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-5A;I
B
=-0.5A
-1.8
V
V
BE
Base-emitter
voltage
I
C
=-5A;V
CE
=-5V
-1.7
V
2SA1075
V
CB
=-120V; I
E
=0
I
CBO
Collector cut-off current
2SA1076
V
CB
=-160V; I
E
=0
-50
A
2SA1075
V
CE
=-120V; I
B
=0
I
CEO
Collector cut-off current
2SA1076
V
CE
=-160V; I
B
=0
-1
mA
I
EBO
Emitter cut-off current
V
EB
=-7V; I
C
=0
-50
A
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-5V 60
200
h
FE-2
DC current gain
I
C
=-7A ; V
CE
=-5V 40
C
ob
Output
capacitance
I
E
=0 ; V
CB
=-10V
300
pF
f
T
Transition
frequency
I
C
=-1A ; V
CE
=-10V 45
MHz
Switching times
t
r
Rise
time
-0.15
s
t
s
Storage
time
-0.50
s
t
f
Fall
time
I
C
=- 7.5A;R
L
=4
I
B1
=- I
B2
=-0.75A
-0.11
s
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