2SA1235A
TRANSISTOR
PNP
FEATURES
Power dissipation
P
CM
: 0.2 W
Tamb=25
Collector current
I
CM:
-0.2 A
Collector-base voltage
V
(BR) CBO
: -60 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR) CBO
I
C
= -100
A
I
E
=0
-60
V
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= -100
A
I
B
=0
-50
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= -100
A
I
C
=0
-6
V
Collector cut-off current
I
CBO
V
CB
= -60 V, I
E
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
= -6V, I
C
=0
-0.1
A
h
FE
1
V
CE
= -6V, I
C
= -1mA
150
500
DC current gain
h
FE
2
V
CE
= -6V, I
C
= -0.1mA
90
Collector-emitter saturation voltage
V
CE
(sat) I
C
=-100 mA, I
B
= -10mA
-0.3
V
Base-emitter saturation voltage
V
BE
(sat) I
C
= -100mA, I
B
= -10mA
-1
V
Transition frequency
f
T
V
CE
= -6V, I
C
= -10mA
180
MHz
Collector output capacitance
C
ob
V
CE
=-6V
I
E
=0
f=1MHz
5
dB
Noise figure
NF
V
CE
=-6V
I
E
=0.3mA, f=100Hz
R
G
=10K?
20
dB
CLASSIFICATION OF hFE
(1)
Rank
E
F
Range
150~300
250~500
Marking
M E
M F
Unit : mm
SOT
--
23
1. BASE
2. EMITTER
3. COLLECTOR
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.
TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189
SOT-23 Plastic-Encapsulate Transistors
SOT-23 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Min
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.800
0.300
0
Max
1.100
0.100
1.000
0.500
0.150
3.000
1.400
2.550
2.000
0.500
8
Min
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.071
0.012
0
Max
0.043
0.004
0.039
0.020
0.006
0.118
0.055
0.100
0.079
0.020
8
Dimensions In Millimeters
Dimensions In Inches
0.037TPY
0.022REF
0.950TPY
0.550REF
D
E
1
A
1
A
2
A
E
L
1
L
b
e1
C
0.2
e
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