2SC1590
Silicon NPN Transistor
RF Power Output
The 2SC1590 is a silicon NPN epitaxial planer type
transistor designed for 136-174MHz RF power amplifiers
on VHF band mobile radio applications.
WINTransceiver
B E C
Features:
High Power Gain: G
pe
>/= 10dB (V
CC
= 13.5V, P
O
= 6W, f = 175MHz)
Ability to Withstand more than 20:1 VSWR Load when Operated at:
V
CC
= 15.2V, P
O
= 6W, f = 175MHz
Application:
4 to 5 Watt Output Power Amplifier Applications in VHF Band
Absolute Maximum Ratings: (T
C
= +25C unless otherwise specified)
Collector-Emitter Voltage (R
BE
= Infinity), V
CEO
17V
Collector-Base Voltage, V
CBO
35V
Emitter-Base Voltage, V
EBO
4V
Collector Current, I
C
12A
Collector Power Dissipation (T
A
= +25C), P
D
1.5W
Collector Power Dissipation (T
C
= +50C), P
D
12.5W
Operating Junction Temperature, T
J
+150C
Storage Temperature Range, T
stg
-55 to +150C
Thermal Resistance, Junction-to-Case, R
thJC
10C/W
Thermal Resistance, Junction-to-Ambient, R
thJA
83C/W
Electrical Characteristics: (T
C
= +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
= 10mA, I
E
= 0
35
-
-
V
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
I
C
= 50mA, R
BE
= Infinity
17
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
= 5mA, I
C
= 0
4
-
-
V
Collector Cutoff Current
I
CBO
V
CB
= 25V I
E
= 0
-
-
500
A
Emitter Cutoff Current
I
EBO
V
EB
= 3V, I
C
= 0
-
-
500
A
DC Forward Current Gain
h
FE
V
CE
= 10V, I
C
= 100mA, Note 1
10
50
180
Power Output
P
O
6
7
-
W
Collector Efficiency
V
CC
= 13.5V, P
in
= 600mW, f =
175MHz
60
70
-
%
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