Power Transistors
www.jmnic.com
2SC3691
Silicon NPN Transistors
Features
B C E
With TO-220Fa package
High speed ,power switching applications
Absolute Maximum Ratings Tc=25
SYMBOL PARAMETER RATING
UNIT
V
CBO
Collector to base voltage
100
V
V
CEO
Collector to emitter voltage
60
V
V
EBO
Emitter to base voltage
5
V
I
C
Collector current
5
A
P
C
Collector power dissipation
25
W
T
j
Junction temperature
150
T
stg
Storage temperature
-55~150
TO-220Fa
Electrical Characteristics Tc=25
SYMBOL PARAMETER
CONDITIONS
MIN
Typ.
MAX
UNIT
I
CBO
Collector cut-off current
V
CB
=60V; I
E
=0
10
uA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
10
uA
I
CEO
Collector cut-off current
V
CBO
Collector-base breakdown voltage
V
CEO(SUS)
Collector-emitter Sustaining voltage
I
C
=30mA; I
B
=0 60
V
V
EBO
Emitter-base breakdown voltage
V
CE(sat-1)
Collector-emitter saturation voltages
I
C
=4A; I
B
=0.2A
0.5
V
V
CE(sat-2)
Collector-emitter saturation voltages
h
FE-1
Forward current transfer ratio
I
C
=1A; V
CE
=2V
100 400
h
FE-2
Forward current transfer ratio
V
BE(sat)1
Base-emitter saturation voltages
I
C
=4A; I
B
=0.2A
1.5
V
V
BE(sat)2
Base-emitter saturation voltages
f
T
Transition
frepuency
I
C
=0.5A; V
CE
=10V
150
MHz
C
ob
Collector Out put Capacitance
I
C
=0, V
CB
=10V
f=1MHz
70 pF
JM
n
ic
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