2SC536
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM
: 400 mW (Tamb=25
)
Collector current
I
CM
: 100 mA
Collector-base voltage
V
(BR)CBO
: 40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=100A,
I
E
=0 40
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=1mA,
I
B
=0 30
V
Emitter-Base breakdown voltage
V
(BR)EBO
I
E
=100A, I
C
=0 5
V
Collector cut-off current
I
CBO
V
CB
=35V, I
E
=0
1
A
Emitter cut-off current
I
EBO
V
EB
=4V, I
C
=0
1
A
DC current gain
h
FE
V
CE
=6V, I
C
=1mA 60
960
Collector-emitter saturation voltage
V
CE
(sat) I
C
=50mA, I
B
=5mA
0.5
V
Transition frequency
f
T
V
CE
=6V, I
C
=1mA
100
MHz
Collector output capacitance
Cob V
CE
=6V,
f=1MHz 3.5 pF
CLASSIFICATION OF h
FE
Rank D
E
F
G
H
Range
60-120 100-200 160-320 280-560 480-960
1
2
3
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
2SC536
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E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.
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