MARKING
G
W
TYPE NAME
h
FE
ITEM
2SC5621
SMALL-SIGNAL TRANSISTOR
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
FEATURE
APPLICATION
Super mini package for easy mounting.
High gain bandwidth product.
fT=4.5GHz
For TV tuners,high frequency amplifier,celluar phone
system.
High gain,low noise.
Can operate at low voltage.
2SC5621 is a super mini package resin sealed silicon NPN
epitaxial transistor.It is designed for high frequency
application.
OUTLINE DRAWING
Unit
:mm
TERMINAL CONNECTOR
1
: BASE
2
: EMITTER
3
: COLLECTOR
EIJA:
MAXIMUM RATINGS (Ta=25)
V
CBO
I
C
P
C
T
j
T
stg
20
50
+125
-55~+125
V
mA
mW
Symbol
Parameter
Collector to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temprature
Ratings
Unit
V
EBO
V
Emitter to Base voltage
V
CEO
12
V
Collector to Emitter voltage
100
3
ELECTRICAL CHARACTERISTICS (Ta=25)
Symbol
Parameter
Test conditions
Limits
Min
Typ
Max
Unit
I
CBO
f
T
C
ob
NF
V
CB
=10V, I
E
=0mA
V
CE
=5V, I
E
=20mA
V
CB
=5V, I
E
=0mA, f =1MHz
V
CE
=5V, I
C
=20mA, f =1GHz
V
CE
=5V, I
C
=5mA, f =1GHz
Gain bandwidth product
Collector output capacitance
Insertion power gain
Noise figure
I
EBO
V
EB
=1V, I
C
=0mA
Emitter cut off current
h
FE
V
CE
=5V, I
C
=20mA
DC forward current gain
S
21
2
Collector cut off current
1.0
1.0
50
250
4.5
1.0
7.5
9.0
1.5
A
A
GHz
pF
dB
dB
0.8
0.4
0.4
1.6
1
2
3
-
1
10
100
1000
0.1
1
10
100
IC
Ta=25
VCE=5V
0.001
0.01
0.1
1
10
100
0.5
0.6
0.7
0.8
0.9
1
V
Ta=25
VCE=5
-
0.10
1.00
10.00
0.1
1.010.0
100.0
IC
Ta=25
VCE=5
-
0.00
2.00
4.00
6.00
8.00
10.00
12.00
14.00
16.00
18.00
20.00
0.11.010.0
100.0
IC
Ta=25
VCE=5
f=0.5GH
f=1.0GH
-
0.1
1.0
10.0
0.1
1
10
100
V
CB
(V)
Ta=25
IE=0mA
f=1MHz
-
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
I
C
(mA)
Ta=25
V
CE
=5V
f=1.0GHz
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
COLLECTOR CURRENT IC(mA)
GAIN BANDWIDTH PRODUCT
VS. COLLECTOR CURRENT
COLLECTOR CURRENT IC(mA)
COMMON EMITTER TRANSFER
BASE TO EMITTER VOLTAGE VBE(V)
POWER GAIN VS. COLLECTOR CURRENT
COLLECTOR CURRENT IC(mA)
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
COLLECTOR TO BASE VOLTAGE VCB(V)
NOISE FIGURE VS. COLLECTOR CURRENT
COLLECTOR CURRENT IC(mA)
2SC5621
SMALL-SIGNAL TRANSISTOR
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
S PARAMETER
VCE=5V,IC=10mA
FREQUENCY
(MHZ)
S
11
MAG
ANG
S
21
MAG
ANG
S
12
MAG
ANG
S
22
MAG
ANG
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
0.297
0.292
0.294
0.287
0.285
0.284
0.285
0.283
0.287
0.282
0.278
0.285
0.286
0.286
0.288
0.287
-155.6
-165.3
-172.9
179.5
174.2
168.6
163.2
158.8
154.2
150.7
146.5
142.4
138.8
135.1
131.4
128.8
0.085
0.100
0.114
0.128
0.143
0.155
0.169
0.182
0.197
0.211
0.222
0.236
0.249
0.263
0.274
0.288
63.2
63.9
65.1
65.1
64.7
64.5
63.7
63.2
61.9
61.4
60.8
59.2
57.9
56.8
55.8
55.0
5.895
4.977
4.308
3.791
3.413
3.098
2.833
2.631
2.440
2.282
2.142
2.030
1.923
1.832
1.751
1.677
86.2
81.4
77.1
73.0
69.3
65.6
62.5
59.2
55.9
53.2
50.2
47.4
44.7
42.0
39.5
37.0
0.310
0.308
0.292
0.291
0.290
0.294
0.294
0.302
0.303
0.306
0.307
0.310
0.321
0.322
0.325
0.330
-43.6
-45.0
-45.0
-45.7
-48.2
-50.4
-51.9
-54.4
-56.7
-58.9
-61.3
-63.3
-65.5
-67.8
-69.8
-72.4
VCE=5V,IC=8mA
FREQUENCY
(MHZ)
S
11
MAG
ANG
S
21
MAG
ANG
S
12
MAG
ANG
S
22
MAG
ANG
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
0.310
0.305
0.303
0.294
0.294
0.290
0.291
0.290
0.291
0.286
0.284
0.289
0.289
0.292
0.292
0.292
-148.5
-159.2
-167.6
-175.0
178.8
172.6
167.4
162.3
157.4
153.5
149.1
145.3
141.3
137.4
133.9
130.5
0.089
0.101
0.114
0.127
0.140
0.154
0.166
0.181
0.194
0.206
0.219
0.233
0.247
0.258
0.271
0.284
60.1
61.7
63.2
62.7
63.0
62.8
61.9
62.0
60.6
59.9
59.7
58.6
57.8
56.8
55.6
54.6
5.733
4.852
4.205
3.701
3.338
3.028
2.773
2.572
2.392
2.232
2.097
1.989
1.883
1.797
1.719
1.642
87.8
82.8
78.2
74.0
70.2
66.4
63.0
59.6
56.3
53.5
50.6
47.7
44.8
42.2
39.5
37.0
0.337
0.331
0.312
0.310
0.308
0.310
0.311
0.318
0.318
0.317
0.322
0.323
0.332
0.335
0.338
0.342
-44.9
-46.8
-46.4
-47.2
-49.6
-51.5
-53.0
-55.4
-57.7
-60.7
-62.2
-64.1
-66.3
-68.4
-70.4
-72.7
VCE=5V,IC=6mA
FREQUENCY
(MHZ)
S
11
MAG
ANG
S
21
MAG
ANG
S
12
MAG
ANG
S
22
MAG
ANG
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
0.343
0.328
0.323
0.311
0.309
0.303
0.302
0.303
0.302
0.297
0.294
0.299
0.300
0.301
0.302
0.299
-139.3
-150.5
-159.4
-167.9
-174.4
178.8
172.7
167.4
162.1
158.1
153.7
148.7
144.7
140.6
136.8
133.3
0.091
0.104
0.115
0.127
0.139
0.153
0.163
0.176
0.190
0.201
0.214
0.225
0.238
0.250
0.263
0.276
56.5
57.6
58.7
59.0
59.9
59.7
59.8
59.1
59.1
59.1
58.3
57.5
56.5
56.0
55.1
54.3
5.461
4.641
4.036
3.565
3.218
2.919
2.675
2.486
2.306
2.162
2.029
1.924
1.824
1.739
1.666
1.592
90.3
84.9
79.9
75.4
71.2
67.3
63.8
60.3
56.8
54.0
50.8
47.8
44.9
42.2
39.5
36.9
0.382
0.369
0.347
0.340
0.335
0.336
0.335
0.342
0.341
0.341
0.345
0.344
0.353
0.356
0.360
0.363
-46.1
-47.9
-47.8
-48.4
-50.5
-52.7
-54.0
-56.5
-58.3
-60.2
-62.9
-65.1
-66.9
-68.9
-70.8
-73.1
2SC5621
SMALL-SIGNAL TRANSISTOR
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
VCE=5V,IC=4mA
FREQUENCY
(MHZ)
S
11
MAG
ANG
S
21
MAG
ANG
S
12
MAG
ANG
S
22
MAG
ANG
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
0.399
0.375
0.364
0.348
0.341
0.332
0.329
0.327
0.325
0.321
0.318
0.320
0.322
0.324
0.324
0.323
-126.4
-137.6
-148.1
-156.9
-164.5
-171.8
-178.6
175.5
169.3
165.0
159.9
154.5
150.2
145.7
141.4
137.7
0.099
0.110
0.118
0.127
0.137
0.149
0.159
0.170
0.180
0.193
0.203
0.215
0.226
0.238
0.250
0.262
51.8
50.9
52.4
53.4
53.7
55.0
55.1
55.8
55.1
56.1
55.7
55.7
55.4
54.9
54.8
54.0
4.984
4.260
3.729
3.306
2.994
2.723
2.502
2.326
2.162
2.027
1.905
1.807
1.715
1.635
1.564
1.498
94.1
88.1
82.7
77.7
73.0
68.9
65.0
61.3
57.5
54.5
51.2
48.1
45.0
42.1
39.4
36.7
0.455
0.439
0.408
0.397
0.387
0.387
0.383
0.387
0.383
0.382
0.385
0.385
0.393
0.395
0.397
0.401
-45.8
-48.2
-48.4
-49.7
-52.0
-54.0
-55.2
-57.3
-59.7
-61.8
-63.7
-65.4
-67.6
-69.5
-71.7
-73.9
2SC5621
VCE=5V,IC=2mA
FREQUENCY
(MHZ)
S
11
MAG
ANG
S
21
MAG
ANG
S
12
MAG
ANG
S
22
MAG
ANG
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
0.506
0.480
0.453
0.434
0.421
0.408
0.398
0.391
0.388
0.381
0.377
0.379
0.380
0.377
0.380
0.379
-106.9
-118.6
-130.6
-139.7
-148.4
-156.6
-164.1
-171.0
-177.9
176.7
171.4
165.0
160.0
154.6
149.2
145.1
0.120
0.128
0.133
0.139
0.144
0.149
0.154
0.161
0.168
0.174
0.183
0.191
0.202
0.212
0.223
0.233
44.1
42.3
42.1
42.3
42.3
43.7
44.6
46.5
47.2
48.6
50.1
50.7
51.9
52.6
52.9
53.5
4.062
3.503
3.115
2.767
2.519
2.316
2.129
1.992
1.857
1.744
1.643
1.562
1.481
1.416
1.357
1.294
100.4
94.0
87.7
82.0
76.7
71.9
67.4
63.1
58.9
55.4
51.8
48.3
44.9
41.9
39.0
36.0
0.593
0.005
0.004
0.003
0.003
0.002
0.002
0.001
0.001
0.001
0.001
0.000
0.000
0.000
0.000
0.000
-42.3
-46.3
-47.5
-49.2
-51.6
-54.1
-55.8
-58.2
-60.2
-62.4
-64.5
-66.6
-68.7
-70.5
-72.5
-75.0
SMALL-SIGNAL TRANSISTOR
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
S PARAMETER
Keep safety in your circuit designs !
Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury,
fire or property damage.Remember to give consideration to safety when making your circuit designs, with appropriate measures
such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction
or mishap.
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