Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com
N-Channel Field Effect Transistor
4N600(3600)
Ordering Information
Device Package Temp.
4N600T TO-220
0 to 150
C
4N600S
TO-263 ( D
2
)
0 to 150
C
Absolute Maximum Rating
Symbol Parameter Max
Unit
Drain Current
-Continues
4.0
2.5
I
D
(T
C
=25
C)
I
D
(T
C
=100
C)
-Pulsed 16
A
V
GSV
Gate Source Voltage
20
V
Total Power Dissipation @ T
C
=25
C
75
W
P
D
Derate above 25
C
0.59
W/
C
T
J
Operating and Storage
T
STG
Temperature Range
-55 to 150
C
Description
The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for high voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D
2
surface
mount power package with a power dissipation up to 2 Watts
Features
Critical DC Electrical parameters
specified at elevated Temp.
Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser
Super high density cell design for
extremely low R
DS(ON)
V
DSS
= 600V
R
DS (ON)
= 1.9
I
D
= 4.0A
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Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556 www.baylinear.com
4N600(3600)
Electrical Characteristics (
T
C
= 25
C unless otherwise specified)
Symbol Parameter
Conditions
Min
Typ
Max
Units
I
DSS
Zero Gate Voltage Drain Current
V
DS
=600V
V
GS
=0V
100
A
V
Drain-to-Source Breakdown
I
D
=100A, V
GS
=0 600
-
-
V
V
GS(TH)
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
A
2 4 V
R
DS(ON)
Static Drain Voltage
V
GS
=10V, I
D
=2.4A -
-
1.9
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS
=20V
V
GS
=-20V
100
-100
NA
g
fs
Forward Tranconductance
V
DS
=100V, I
D
=2.4A
2.9
S
C
ISS
Input Capacitance
800
pF
C
OSS
Output Capacitance
110
pF
C
RSS
Reverse Tras. Capacitance
V
DS
= 25V, V
GS
=0V
F=1.0 MHZ
20 pF
t
D(ON)
Turn-ON Delay Time
12
t
r
Turn-ON Rise Time
18
t
d(off)
Turn-OFF Delay Time
53
t
F
Turn-OFF Fall Time
V
DD
=300V
I
D
=2.4A, R
GEN
=12
R
D
=74
19
NS
I
S
Maxim Continuous Drain source Diode Forward Current
4.0
A
V
DS
(note)
Drain Source Diode
Forward Voltage
V
GS
=0V
I
S
=4A
1.50 V
THERMAI CHRACTERISTICS
R
JC
Thermal Resistance, Junction to Case
5
C/W
R
JC
Thermal Resistance, Junction to Ambient
100
C/W
Note: Pulse Test: Pulse With
300
S, Duty Cycle
2.0%
Advance Information
- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
computer simulations and/ or initial prototype evaluation.
Preliminary Information
- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit
design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different
applications. Customer's technical experts must validate all operating parameters including " Typical" for each customer application.
LIFE SUPPORT AND NUCLEAR POLICY
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without
the specific written consent of Bay Linear President.
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