SOT-23 Plastic-Encapsulate Transistors
9012LT1
TRANSISTOR
PNP
FEATURES
Power dissipation
P
CM
: 0.3 W
Tamb=25
Collector current
I
CM
: -0.5 A
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless
otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= -100
A
I
E
=0
-40
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= -1mA
I
B
=0
-25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-100
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-40 V , I
E
=0
-0.1
A
Collector cut-off current
I
CEO
V
CE
=-20V , I
B
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
= -5V , I
C
=0
-0.1
A
h
FE(1)
V
CE
=-1V, I
C
= -50mA
120
350
DC current gain
h
FE(2)
V
CE
=-1V, I
C
=-500mA
40
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-500 mA, I
B
= -50mA
-0.6
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-500 mA, I
B
= -50mA
-1.2
V
Transition frequency
f
T
V
CE
=-6V, I
C
= -20mA
f=
30MHz
150
MHz
CLASSIFICATION OF h
FE(1)
DEVICE MARKING: 9012LT1=2T1
Unit : mm
SOT
--
23
1. BASE
2. EMITTER
3. COLLECTOR
SHENZHEN ICHN ELECTRONICS TECH. CO., LTD
HTTP: WWW. SZXC. COM. CN
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