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September 2004
STGF7NB60SL
N-CHANNEL 7A - 600V - TO-220FP
PowerMESHTM IGBT
Table 1: General Features
s
POLYSILICON GATE VOLTAGE DRIVEN
s
LOW THRESHOLD VOLTAGE
s
LOW ON-VOLTAGE DROP
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH
TM
IGBTs, with outstanding performances.
The suffix "S" identifies a family optimized achieve
minimum on-voltage drop for low frequency appli-
cations (<1kHz).
APPLICATIONS
s
LIGHT DIMMER
s
STATIC RELAYS
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
CES
V
CE(sat)
(Max)
@25C
I
C
@100C
STGF7NB60SL
600 V
< 1.6 V
7 A
1
2
3
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGF7NB60SL
GF7NB60SL
TO-220FP
TUBE
Rev.3
STGF7NB60SL
2/9
Table 3: Absolute Maximum ratings
(1)Pulse width limited by max. junction temperature.
Table 4: Thermal Data
ELECTRICAL CHARACTERISTICS (T
CASE
=25C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Table 6: On
Symbol
Parameter
Value
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
600
V
V
ECR
Reverse Battery Protection
20
V
V
GE
Gate-Emitter Voltage
20
V
I
C
Collector Current (continuous) at 25C
15
A
I
C
Collector Current (continuous) at 100C
7
A
I
CM
(1)
Collector Current (pulsed)
20
A
P
TOT
Total Dissipation at T
C
= 25C
25
W
Derating Factor
0.2
W/C
V
ISO
Insulation Withstand Voltage A.C.
2500
V
T
stg
Storage Temperature
55 to 150
C
T
j
Operating Junction Temperature
Rthj-case
Thermal Resistance Junction-case Max
5
C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
BR(CES)
Collectro-Emitter Breakdown
Voltage
I
C
= 250 A, V
GE
= 0
600
V
V
BR(ECS)
Emitter-Collector Breakdown
Voltage
I
C
= 1mA, V
GE
= 0
20
V
I
CES
Collector-Emitter Leakage
Current (V
CE
= 0)
V
GE
= Max Rating
Tc=25C
Tc=125C
10
100
A
A
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
V
GE
= 20 V , V
CE
= 0
100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GE(th)
Gate Threshold Voltage
V
CE
= V
GE
, I
C
= 250 A
1.2
2.4
V
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
GE
=4.5 V, I
C
= 7A, Tj= 25C
V
GE
=4.5 V, I
C
= 7A, Tj= 125C
1.2
1.1
1.6
V
V
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STGF7NB60SL
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Table 8: Switching On
Table 9: Switching Off
(**)Turn-off losses include also the tail of the collector current.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
CE
= 15 V
,
I
C
= 7 A
5
S
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
CE
= 25V, f = 1 MHz, V
GE
= 0
800
60
10
pF
pF
pF
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 480V, I
C
= 7 A,
V
GE
= 5V
(see Figure 20)
16
2.5
8.5
22
nC
nC
nC
I
CL
Turn-Off SOA Minimum
Current
V
clamp
= 480 V
,
Tj = 125C
R
G
= 1 K
,
V
GE
=5V
20
A
tscw
Short Circuit Withstand Time
V
ce
= 0.5 V
BR(CES)
, V
GE
=5V
,
Tj = 125C , R
G
= 1K
14
s
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Current Rise Time
V
CC
= 480 V, I
C
= 7 A R
G
=1K
,
V
GE
= 5 V
(see Figure 18)
1.1
0.25
s
s
(di/dt)
on
E
on
Turn-on Current Slope
Turn-on Switching Losses
V
CC
= 480 V, I
C
= 7 A R
G
=1K
V
GE
= 5 V,Tj = 125C
45
2.7
A/s
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 7 A,
R
GE
= 1K
, V
GE
= 5 V
(see Figure 18)
2.7
s
t
r
(V
off
)
Off Voltage Rise Time
1.6
s
t
d
(
off
)
Delay Time
5.2
s
t
f
Current Fall Time
1.1
s
E
off
(**)
Turn-off Switching Loss
4.1
m
J
t
c
Cross-over Time
V
cc
= 480 V, I
C
= 7 A,
R
GE
= 1K
, V
GE
= 5 V
Tj = 125 C
(see Figure 18)
4.4
s
t
r
(V
off
)
Off Voltage Rise Time
2.4
s
t
d
(
off
)
Delay Time
6.4
s
t
f
Fall Time
1.7
s
E
off
(**)
Turn-off Switching Loss
7.1
m
J
STGF7NB60SL
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Figure 3: Output Characteristics
Figure 4: Transconductance
Figure 5: Collector-Emitter On Voltage vs Col-
lector Current
Figure 6: Transfer Characteristics
Figure 7: Collector-Emitter On Voltage vs Tem-
perature
Figure 8: Normalized Collector-Emitter On
Voltage vs Temperature
5/9
STGF7NB60SL
Figure 9: Gate Thereshold vs Temperature
Figure 10: Capacitance Variations
Figure 11: Total Switching Losses vs Gate Re-
sistance
Figure 12: Normalized Breakdown Voltage vs
Temperature
Figure 13: Gate Charge vs Gate-Emitter Volt-
age
Figure 14: Total Switching Losses vs Temper-
ature
STGF7NB60SL
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Figure 15: Total Switching Losses vs Collector
Current
Figure 16: Thermal Impedance
Figure 17: Turn-Off SOA
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STGF7NB60SL
Figure 18: Test Circuit for Inductive Load
Switching
Figure 19: Switching Waveforms
Figure 20: Gate Charge Test Circuit
STGF7NB60SL
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Table 10: Revision History
Date
Revision
Description of Changes
04-June-2004
2
Stylesheet update. No content change
02-Sep-2004
3
Datasheet updated, see table1
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STGF7NB60SL
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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