COMSET SEMICONDUCTORS
1/3
LF Large Signal Power Amplification
Low Saturation Voltage
High Dissipation Rating
Intended for a wide variety of intermediate-power applications.
It is especially suited for use in audio and inverter circuits at 12 volts.
NPN SILICON TRANSISTOR
POWER LINERAR AND SWITCHING
APPLICATIONS
BD142
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
V
CEO
Collector-Emitter Voltage
45
V
V
EBO
Collector-Emitter Voltage
45
V
V
CBO
Emitter-Base Voltage
7
V
V
CEX
Collector-Emitter Voltage
V
BE
=-1.5 V
50
V
I
C
Collector Current
15
A
I
B
Base Current
7
A
P
T
Power Dissipation
@ T
C
= 25
117
Watts
T
J
Junction Temperature
T
S
Storage Temperature
-65 to +200
C
COMSET SEMICONDUCTORS
2/3
BD142
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
R
thJ-C
Thermal Resistance, Junction to Case
1.5
C/W
ELECTRICAL CHARACTERISTICS
TC=25C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
V
CEO(BR)
Collector-Emitter
Breakdown Voltage (*)
I
C
=200 mA, I
B
=0
45
V
V
CEX(BR)
Collector-Emitter
Breakdown Voltage (*)
I
C
=100 mA, V
BE
=-1.5 V
50
V
V
CE(SAT)
Collector-Emitter Saturation
Voltage (*)
I
C
=4 A, I
B
=0.4 A
-
-
1.1
V
I
CEX
Collector-Emitter Cutoff
Current
V
CE
=100 V
V
BE
=-1.5 V
-
-
2
mA
I
EBO
Emitter-Base Cutoff Current
V
EB
=7 V
-
-
1
mA
V
BE
Base-Emitter Voltage (*)
I
C
=4.0 A, V
CE
=4.0V
-
-
1.5
V
COMSET SEMICONDUCTORS
3/3
BD142
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
I
S/B
Second Breakdown
collector current
t=1s, V
CE
=39 V
3
-
-
A
V
CE
=4.0 V, I
C
=4.0 A
12.5
-
160
h
21E
Static Forward Current
Transfer Ratio (*)
V
CE
=4.0 V, I
C
=0.5 A
20
-
-
-
(*) Pulse Width
300 s, Duty Cycle 2.0%
(1) collector-Emitter voltage limited et V
CEci
= V
rated by an auxiliary circuit
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm
inches
A
25,51
1,004
B
38,93
1,53
C
30,12
1,18
D
17,25
0,68
E
10,89
0,43
G
11,62
0,46
H
8,54
0,34
L
1,55
0,6
M
19,47
0,77
N
1
0,04
P
4,06
0,16
Pin 1 :
Base
Pin 2 :
Emitter
Case :
Collector
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