PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia Ph./Fax: +78162231736
E-mail: planeta@novgorod.net
August 2001 Rev 1 http://www.novgorod.net/~planeta
PLANETA
The Small-signal
NPN Silicon High Voltage
Medium-Power Transistor
DESCRIPTION
The BF622 is an NPN silicon epitaxial transistor designed for
application as a video output to drive color CRT, telephony, professional
communication equipment and other high voltage applications.
It has dynamic range and good current characteristic.
This high voltage transistor in 3-Pin mini power plastic package SOT89
offers superior quality and performance at low cost.
FEATURES
Low Saturation Voltages
V
CE(sat)
= 0.6 V
V
BE(sat)
= 0.9 V
High Breakdown Voltages
V
(BR)CBO
= 250 V
V
(BR)CEO
= 250 V
Low Collector Current
I
C
= 50 mA
Complementary to BF623
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 C)
Rating
Symbol
Value
Unit
Collector Emitter Voltage
V
CEO
250
V
Collector Base Voltage
V
CBO
250
V
Emitter Base Voltage
V
EBO
5
V
Collector Current
I
C
50
mA
Peak Collector Current
I
CM
100
mA
Collector Dissipation
P
C
1.0
W
Junction Temperature
T
JMAX
150
C
Operating Junction Temperature Range
T
OPR
-60 to +100
C
Storage Temperature Range
T
STG
-65 to +150
C
ORDERING INFORMATION
Device
Marking
Package
Quantity
Packing Style
BF622
DA
SOT-89
5 Kpcs / plastic
bags
In bulk
BF622-T1
DA
SOT-89
1 Kpcs / Reel
Embossed tape 12-mm wide 7''
dia. Pin 2 (Collector) towards the
windung. Perforation on the right.
BF622
SOT89
JEDEC TO-243
EIAJ SC-62
GOST KT-47
Weight: 0.055g
1
2
3
1 Base
2 Collector
3 Emitter
2
BF622
Ph./Fax: +78162231736 PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
E-mail: planeta@novgorod.net
http://www.novgorod.net/~planeta August 2001 Rev 1
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25 C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DC CHARACTERISTICS
Collector Base Cutoff Current,
I
E
= 0mA, V
CB
=200V
I
CBO
10
nA
Emitter Base Cutoff Current,
I
C
= 0mA, V
EB
= 5V
I
EBO
50
nA
Collector Base Breakdown Voltage,
I
C
= 10
A, I
E
= 0mA
V
(BR)CBO
250
V
Collector Emitter Breakdown Voltage,
I
C
= 1mA, I
B
= 0mA
V
(BR)CEO
250
V
Emitter Base Breakdown Voltage,
I
E
=100
A, I
C
= 0mA
V
(BR)CEO
5
V
DC Current Gain,
I
C
= 25mA, V
CE
= 20V
h
FE
50
AC CHARACTERISTICS
Collector Emitter Saturation Voltage,
I
C
= 30mA, I
B
= 5mA
V
CE(sat)
0.6
V
Base Emitter Saturation Voltage,
I
C
= 20mA, I
B
= 2mA
V
BE(sat)
0.9
V
Collector Base Capacitance,
I
E
= 0mA, V
CB
= 30V, f=1MHz
C
OB
1.6
pF
Current Gain Bandwidth Product,
I
C
= 10mA, V
CE
= 10V
f
T
60
MHz
PACKAGE DIMENSIONS of BF622 in mm
B
4.50,1
1.9max
0
.
8
m
i
n
2
.
5
0
.
1
4
0
.
2
5
1.5
3.0
1.50.1
0.4
0.50.05
0.40.05
1
2
3
B
PLASTIC CASE KT-47
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