PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia Ph./Fax: +78162231736
E-mail: planeta@novgorod.net
July 2000 Rev 1 http://www.novgorod.net/~planeta
PLANETA
The RF Line
NPN Silicon
High-Frequency Transistor
DESCRIPTION
The BFR91 is an NPN silicon epitaxial transistor designed for low noise
amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
This small-signal plastic transistor offers superior quality and
performance at low cost.
FEATURES
High Gain-Bandwidth Products
f
T
=5.0 GHz (Typ) @ 30 mA
Low Noise Figure
N
F
=1.9 dB (Typ) @ 500 MHz
High Gain
G
PS
= 18.0 dB (Typ) @ 500 MHz
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 C)
Rating
Symbol
Value
Unit
Collector- Emitter Voltage
V
CEO
12
V
Collector- Base Voltage
V
CBO
20
V
Emitter- Base Voltage
V
EBO
2
V
Collector Current
I
C
50
mA
Power Dissipation
P
tot
300
mW
Junction Temperature
T
JMAX
150
C
Operating Junction Temperature Range
T
J
-45 to +70
C
Storage Temperature Range
T
STG
-65 to +150
C
THERMAL CHARACTERISTIC
Thermal Resistance, Junction to Case
R
JC
400
C/W
ORDERING INFORMATION
Device
Marking
Package
Quantity
Packing Style
BFR91
BFR91
SOT-37
1 Kpcs / plastic bags In bulk
BFR91
SOT37
JEDEC TO-50
EIAJ
GOST KT-29
Weight: 0.2g
1
2
3
1 Base
2 Collector
3 Emitter
BFR91
Ph./Fax: +78162231736 PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
E-mail: planeta@novgorod.net
http://www.novgorod.net/~planeta July 2000 Rev 1
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25 C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DC CHARACTERISTICS
Collector Cutoff Current,
I
E
= 0mA, V
CB
=20V
I
CBO
100
nA
Emitter Cutoff Current,
I
C
= 0mA, V
EB
= 2V
I
EBO
10
A
Collector Emitter Breakdown Voltage,
I
C
= 1mA, I
B
= 0mA
V
(BR)CEO
12
V
DC Current Gain,
I
E
=30mA, V
CB
= 5V
h
FE
25
50
150
AC CHARACTERISTICS
Transition Frequency,
I
C
=30mA, V
CB
= 5V, f=300MHz
f
T
5.0
GHz
Collector-Base Capacitance,
I
E
= 0mA, V
CB
=10V, f= 1MHz
C
cb
0.5
0.9
pF
Noise Figure,
I
E
= 2mA, V
CE
= 5V, f=500MHz, Z
S
=50
N
F
1.9
dB
Power Gain,
I
E
=30mA, V
CE
= 5V, f=500MHz, Z
L
=Z
Lopt
I
E
=30mA, V
CE
= 5V, f=800MHz, Z
L
=Z
Lopt
G
PS
18.0
13.0
dB
TIPICAL CHARACTERISTICS
(T
A
= 25 C unless otherwise noted)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 2. Collector Base Capacitance vs.
Collector Base Voltage
0
50
100
150
200
250
300
350
0
20
40
60
80
100
120
140
160
T
amb
- Ambient Temperature (C)
P
t
o
t
-
T
o
t
a
l
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
(
m
W
0
0,2
0,4
0,6
0,8
1
0
5
10
15
20
V
CB
- Collector Base Voltage (V)
C
c
b
-
C
o
l
l
e
c
t
o
r
B
a
s
e
C
a
p
a
c
i
t
a
n
c
e
(
p
F
V
CB
=10V
f=1MHZ
BFR91
PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia Ph./Fax: +78162231736
E-mail: planeta@novgorod.net
July 2000 Rev 1 http://www.novgorod.net/~planeta
3
TIPICAL CHARACTERISTICS
(T
A
= 25 C unless otherwise noted)
Figure 3. Transition Frequency vs.
Emitter Current
Figure 4. Noise Figure vs.
Emitter Current
Figure 5. Power Gain vs.
Emitter Current
Figure 6. DC Current Gain vs.
Emitter Current+
0
0,5
1
1,5
2
2,5
3
3,5
0
5
10
15
20
25
30
35
40
I
E
- Emitter Current (mA)
N
F
-
N
o
i
s
e
F
i
g
u
r
e
(
d
B
)
V
CE
=8V
f=800MHZ
0
20
40
60
80
100
120
140
0
5
10
15
20
25
30
I
E
- Emitter Current (mA)
h
F
E
-
D
C
C
u
r
r
e
n
t
G
a
i
n
V
CB
=5V
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
35
40
I
E
- Emitter Current (mA)
G
P
S
-
P
o
w
e
r
G
a
i
n
(
d
B
)
V
CE
=5V
f=800MHZ
0
1
2
3
4
5
6
7
0
5
10
15
20
25
30
35
40
45
50
I
E
- Emitter Current (mA)
f
T
-
T
r
a
n
s
i
t
i
o
n
F
r
e
q
u
e
n
c
y
(
G
H
z
V
CB
=5V
f=300MHZ
BFR91
Ph./Fax: +78162231736 PLANETA JSC, 2/13 Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
E-mail: planeta@novgorod.net
http://www.novgorod.net/~planeta July 2000 Rev 1
4
5.5max
5
.
5
m
a
x
Base
Emitter
Collector
5.2max
6,8max
2
,
7
m
a
x
0
,
2
4
m
a
x
5max
on counter
8,4max
1
,
2
m
a
x
1
m
a
x
1
.
4
m
a
x
PACKAGE DIMENSIONS in mm
PLASTIC CASE KT-29
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