2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
Page 1 of 7
Features
Self Bias Architecture
On-Chip Drain Bias Coil/DC Blocking
9.0 dB Small Signal Gain
4.5 dB Noise Figure
+19.0 dBm P1dB Compression Point
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
mA
Min.
2.0
-
-
-
-
-
-
-
-
-
+4.5
100
Typ.
-
12.0
15.0
9.0
+/-0.5
20.0
4.5
+19.0
+39.0
+29.0
+5.0
115
Max.
18.0
-
-
-
-
-
-
-
-
-
+7.0
130
Supply Voltage (Vd)
Supply Current (Id)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+8.5 VDC
175 mA
+20 dBm
-65 to +165
O
C
-55 to MTTF Table
MTTF Table
Chip Device Layout
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Mimix Broadband's 2.0-18.0 GHz GaAs MMIC
distributed low noise amplifier has a small signal gain
of 9.0 dB with a noise figure of 4.5 dB across the band.
This MMIC uses Mimix Broadband's 0.3 m GaAs
PHEMT device model technology, and is based upon
optical beam lithography to ensure high repeatability
and uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via
holes and gold metallization to allow either a
conductive epoxy or eutectic solder die attach process.
This device is well suited for fiber optic, microwave
radio, military, space, telecom infrastructure, test
instrumentation and VSAT applications.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Absolute Maximum Ratings
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Second Order Intercept Point (OIP2)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd)
Supply Current (Id) (Vd=5.0V)
CMM4000
May 2006 - Rev 08-May-06
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
Page 2 of 7
Low Noise Amplifier Measurements
2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM4000
May 2006 - Rev 08-May-06
CMM4000 Vd=5.0 V Id=110 mA
3
4
5
6
7
8
9
10
11
12
13
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
Frequency (GHz)
Ga
i
n
(
d
B
)
CMM4000 Vd=5.0 V, Id=110 mA
0
1
2
3
4
5
6
7
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Frequency (GHz)
N
o
i
s
e
Fi
gu
r
e
(
d
B
)
CMM4000 Vd=5.0 V Id=110 mA
-25
-20
-15
-10
-5
0
5
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
Frequency (GHz)
I
nput
R
e
t
u
r
n
Los
s
(
d
B
)
CMM4000 Vd=5.0 V Id=110 mA
-40
-35
-30
-25
-20
-15
-10
-5
0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
Frequency (GHz)
O
u
tp
u
t
Re
tu
r
n
L
o
s
s
(d
B)
CMM4000 Id=110 mA
4
6
8
10
12
14
16
18
20
22
24
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0
Frequency (GHz)
O
u
t
p
u
t
Po
w
e
r
P1
d
B
(
d
B
m
)
0
5
10
15
20
25
30
35
40
45
50
P
o
w
e
r A
d
d
e
d
E
f
f
i
ci
en
cy
(
%
)
P1dB_5V
P1dB_6V
P1dB_7V
PAE_5V
PAE_6V
PAE_7V
CMM4000 Vd=5.0 V Id=100 mA
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Frequency (GHz)
OI
P
3
/
O
I
P
2
(
d
B
m
)
OIP3
OIP2
Page 3 of 7
Low Noise Amplifier Measurements (cont,)
2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
CMM4000
May 2006 - Rev 08-May-06
CMM4000 Vd=5.0 V Id=100 mA
2
3
4
5
6
7
8
9
10
11
12
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Frequency (GHz)
Sm
a
ll Sig
n
a
l
G
a
in
(
d
B
)
+25 deg C
+125 deg C
-55 deg C
CMM4000 Vd=5.0 V, Id=100 mA
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Frequency (GHz)
Ou
t
p
u
t
P
o
we
r P
1
d
B
(
d
B
m
)
+25 deg C
+125 deg C
-55 deg C
Page 4 of 7
S-Parameters
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
CMM4000
May 2006 - Rev 08-May-06
Typcial S-Parameter Data for CMM4000
V
d=5.0 V Id=110 m
A
Frequency
S11
S11
S21
S21
S12
S12
S22
S22
(GHz)
(Mag)
(Ang)
(Mag)
(Ang)
(Mag)
(Ang)
(Mag)
(Ang)
0.1
0.939
-28.86
0.030
117.39
0.000
133.12
0.983
118.74
1.0
0.364
-132.15
1.904
-171.74
0.005
-60.12
0.534
-87.11
2.0
0.296
-154.45
2.668
-105.50
0.010
-5.71
0.229
-64.48
3.0
0.286
-160.46
2.828
-70.66
0.018
18.16
0.160
-81.40
4.0
0.292
-165.78
2.828
-44.41
0.022
44.37
0.185
-91.05
5.0
0.315
-170.64
2.797
-22.20
0.026
64.72
0.209
-89.28
6.0
0.320
-179.10
2.736
-1.45
0.030
76.12
0.225
-84.50
7.0
0.290
174.17
2.741
16.88
0.036
97.10
0.225
-74.33
8.0
0.266
167.95
2.740
35.36
0.040
112.34
0.212
-65.50
9.0
0.228
162.72
2.762
53.73
0.045
127.57
0.188
-56.22
10.0
0.181
161.86
2.806
72.32
0.050
143.05
0.153
-46.48
11.0
0.144
170.52
2.862
91.58
0.056
159.35
0.108
-37.11
12.0
0.139
-173.68
2.911
111.73
0.062
176.77
0.056
-30.81
13.0
0.171
-168.09
2.934
132.75
0.068
-164.72
0.014
-113.48
14.0
0.194
-177.47
2.900
154.42
0.072
-145.03
0.068
-151.52
15.0
0.190
164.69
2.814
175.34
0.075
-126.55
0.112
-133.14
16.0
0.159
135.47
2.816
-164.76
0.080
-108.43
0.099
-114.04
17.0
0.120
77.24
2.903
-141.37
0.087
-87.59
0.077
-134.21
18.0
0.148
0.06
2.899
-115.02
0.092
-63.43
0.106
-143.64
19.0
0.191
-50.22
2.832
-86.80
0.095
-37.36
0.113
-137.82
20.0
0.103
-69.38
2.720
-53.34
0.096
-5.72
0.089
-152.93
21.0
0.305
-2.05
2.171
-11.92
0.080
34.73
0.166
-175.57
22.0
0.623
-38.06
1.302
21.15
0.048
66.50
0.241
-156.77
23.0
0.768
-63.85
0.764
40.26
0.029
85.11
0.254
-141.68
24.0
0.840
-81.23
0.475
52.76
0.017
92.79
0.243
-132.25
25.0
0.878
-93.97
0.303
60.92
0.010
100.58
0.227
-127.37
26.0
0.908
-103.83
0.197
61.87
0.006
93.67
0.209
-126.41
27.0
0.927
-112.29
0.147
53.60
0.005
60.51
0.201
-128.78
28.0
0.939
-119.49
0.148
48.15
0.007
51.59
0.204
-132.36
29.0
0.941
-125.43
0.158
55.22
0.007
68.77
0.219
-134.50
30.0
0.946
-130.57
0.155
69.84
0.008
84.14
0.238
-132.64
Page 5 of 7
Mechanical Drawing
Bias Arrangement
Bypass Capacitors
- See App Note [2]
(Note: Engineering designator is M393)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.076 +/- 0.010 (0.003 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.080 x 0.080 (0.003 x 0.003). All RF Bond Pads are 0.180 x 0.080 (0.007 x 0.003).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.172 mg
Bond Pad #1 (RF In)
Bond Pad #2 (Vd)
Bond Pad #3 (RF Out)
Bond Pad #4 (Rs-8.5 )
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Bond Pad #5 (Rs-12 )
Bond Pad #6 (Rs-13 )
2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
CMM4000
May 2006 - Rev 08-May-06
3
1
4
1.000
(0.039)
0.348
(0.014)
2
0.0
0.0
1.890
(0.074)
1.795
(0.071)
5
1.675
(0.066)
6
1.555
(0.061)
1.414
(0.056)
0.539
(0.021)
3
1
4
2
5
6
Vd
RF In
RF Out
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