CMT08N50
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2003/03/31
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 1
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS
(on) Specified at Elevated Temperature
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
Top View
1
2
3
GA
T
E
DRAI
N
SO
URCE
D
S
G
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating Symbol
Value
Unit
Drain to Current Continuous
Pulsed
I
D
I
DM
8.0
32
A
Gate-to-Source Voltage Continue
Non-repetitive
V
GS
V
GSM
20
40
V
V
Total Power Dissipation
TO-220
TO-220FP
P
D
125
40
W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to 150
Single Pulse Drain-to-Source Avalanche Energy T
J
= 25
(V
DD
= 100V, V
GS
= 10V, I
L
= 8A, L = 10mH, R
G
= 25)
E
AS
320
mJ
Thermal Resistance Junction to Case
Junction to Ambient
JC
JA
1.0
62.5
/W
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds
T
L
260
CMT08N50
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
2003/03/31
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 2
ORDERING INFORMATION
Part Number
Package
CMT08N50N220 TO-220
CMT08N50N220FP
TO-220 Full Package
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25.
CMT08N50
Characteristic Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250 A)
V
(BR)DSS
500
V
Drain-Source Leakage Current
(V
DS
= 500 V, V
GS
= 0 V)
(V
DS
= 400 V, V
GS
= 0 V, T
J
= 125)
I
DSS
25
250
A
Gate-Source Leakage Current-Forward
(V
gsf
= 20 V, V
DS
= 0 V)
I
GSSF
100
nA
Gate-Source Leakage Current-Reverse
(V
gsr
= 20 V, V
DS
= 0 V)
I
GSSR
100
nA
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 A)
V
GS(th)
2.0 4.0 V
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 4.0A) *
R
DS(on)
0.8
Drain-Source On-Voltage (V
GS
= 10 V)
(I
D
= 8.0 A)
V
DS(on)
5.0
7.2
V
Forward Transconductance (V
DS
= 50 V, I
D
= 4.0A) *
g
FS
4.9
mmhos
Input Capacitance
C
iss
1450
1680
pF
Output Capacitance
C
oss
190
246
pF
Reverse Transfer Capacitance
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
C
rss
45.4
144
pF
Turn-On Delay Time
t
d(on)
15
50
ns
Rise Time
t
r
33
72
ns
Turn-Off Delay Time
t
d(off)
40
150
ns
Fall Time
(R
Go
+ C17n = 9.1) *
t
f
32
60
ns
Total Gate Charge
Q
g
40
64
nC
Gate-Source Charge
Q
gs
8.0 nC
Gate-Drain Charge
(V
DS
= 400 V, I
D
= 8.0 A,
V
GS
= 10 V)*
Q
gd
17
nC
Internal Drain Inductance
(Measured from the drain lead 0.25" from package to center of die)
L
D
4.5 nH
Internal Drain Inductance
(Measured from the source lead 0.25" from package to source bond pad)
L
S
7.5 nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
V
SD
1.5
V
Forward Turn-On Time
t
on
**
ns
Reverse Recovery Time
(I
S
= 8.0 A, V
GS
= 0 V,
d
IS
/d
t
= 100A/s)
t
rr
320
ns
* Pulse Test: Pulse Width 300s, Duty Cycle 2%
** Negligible, Dominated by circuit inductance
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