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CMT2N7000
S
MALL
S
IGNAL
MOSFET
2002/10/07
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 1
GENERAL DESCRIPTION
FEATURES
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring
up to 200mA DC and can deliver pulsed currents up to
500mA. This product is particularly suited for low voltage,
low current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.
! High Density Cell Design for Low R
DS(ON)
!
Voltage Controlled Small Signal Switch
!
Rugged and Reliable
!
High Saturation Current Capability
PIN CONFIGURATION
SYMBOL
TO-92
Top View
1
2
3
S
O
U
RCE
GA
TE
DR
A
I
N
D
S
G
N-Channel MOSFET
ORDERING INFORMATION
Part Number
Package
CMT2N7000 TO-92
ABSOLUTE MAXIMUM RATINGS
Rating Symbol
Value
Unit
Drain Source Voltage
V
DSS
60 V
Drain-Gate Voltage (R
GS
= 1.0M) V
DGR
60 V
Drain to Current Continuous
Pulsed
I
D
I
DM
200
500
mA
Gate-to-Source Voltage Continue
Non-repetitive
V
GS
V
GSM
20
40
V
V
Total Power Dissipation
Derate above 25
P
D
350
2.8
mW
mW/
Operating and Storage Temperature Range
T
J
, T
STG
-55
to
150
Thermal Resistance Junction to Ambient
JA
357
/W
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds
T
L
300
CMT2N7000
S
MALL
S
IGNAL
MOSFET
2002/10/07
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 2
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25.
CMT2N7000
Characteristic Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 10 A)
V
(BR)DSS
60
V
Drain-Source Leakage Current
(V
DS
= 48 V, V
GS
= 0 V)
(V
DS
= 48 V, V
GS
= 0 V, T
J
= 125)
I
DSS
1.0
1.0
A
mA
Gate-Source Leakage Current-Forward
(V
gsf
= 15 V, V
DS
= 0 V)
I
GSSF
-10
nA
Gate Threshold Voltage *
(V
DS
= V
GS
, I
D
= 1.0 mA)
V
GS(th)
0.8 3.0 V
Static Drain-Source On-Resistance *
(V
GS
= 10 V, I
D
= 0.5A)
R
DS(on)
5.0
Drain-Source On-Voltage *
(V
GS
= 10 V, I
D
= 0.5A)
V
DS(on)
2.5
V
On-State Drain Current *
(V
GS
= 5 V, V
DS
= 10 V)
I
d(on)
60 mA
Forward Transconductance (V
DS
= 10 V, I
D
= 200mA) *
g
FS
100
mmhos
Input Capacitance
C
iss
60
pF
Output Capacitance
C
oss
25
pF
Reverse Transfer Capacitance
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
C
rss
5.0
pF
Turn-On Delay Time
t
d(on)
10
ns
Turn-Off Delay Time
(V
DD
= 15 V, I
D
= 500 mA,
V
gen
= 10 V, R
G
= 25, R
L
= 30) *
t
d(off)
10
ns
* Pulse Test: Pulse Width 300s, Duty Cycle 2%
CMT2N7000
S
MALL
S
IGNAL
MOSFET
2002/10/07
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 3
TYPICAL ELECTRICAL CHARACTERISTICS
CMT2N7000
S
MALL
S
IGNAL
MOSFET
2002/10/07
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 4
PACKAGE DIMENSION
TO-92
1
L
e
A
b
A1
D
D1
E
A
E
D
L
e
D1
A1
1
b
CMT2N7000
S
MALL
S
IGNAL
MOSFET
2002/10/07
Preliminary
Rev. 1.0
Champion Microelectronic Corporation
Page 5
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
11F, No. 306-3, SEC. 1, Ta Tung Road,
Hsichih, Taipei Hsien 221, Taiwan
T E L : +886-3-567 9979
T E L : +886-2-8692 1591
F AX : +886-3-567 9909
F AX : +886-2-8692 1596
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