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CMT60N06
N-C
HANNEL
Logic Level Power M
OSFET
2004/05/28
Preliminary
rev.0.1
Champion Microelectronic Corporation
Page 1
APPLICATION
FEATURES
DC motor control
UPS
Class D Amplifier
V
DSS
R
DS(ON)
Typ.
I
D
60V 15.8m 60A
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
PIN CONFIGURATION
SYMBOL
TO-220
Front View
1
2
3
GA
T
E
DRAI
N
SOURCE
D
S
G
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating Symbol
Value
Unit
Drain to Source Voltage (Note 1)
V
DSS
60 V
Drain to Current Continuous Tc = 25, V
GS
@10V
Continuous Tc = 100, V
GS
@10V
Pulsed Tc = 25, V
GS
@10V (Note 2)
I
D
I
D
I
DM
60
43
241
A
Gate-to-Source Voltage Continue
V
GS
20 V
Total Power Dissipation
Derating Factor above 25
P
D
150
1.0
W
W/
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Operating Junction and Storage Temperature Range
T
J
, T
STG
-55 to 175
Single Pulse Avalanche Energy L=144
H,I
D
=40 Amps
E
AS
500 mJ
Maximum Lead Temperature for Soldering Purposes
T
L
300
Maximum Package Body for 10 seconds
T
PKG
260
Pulsed Avalanche Rating
I
AS
60 A
THERMAL RESISTANCE
Symbol Parameter Min
Typ
Max
Units
Test
Conditions
R
JC
Junction-to-case
1.0
/W Water cooled heatsink, P
D
adjusted for a peak junction
temperature of +175
R
JA
Junction-to-ambient
62
/W 1 cubic foot chamber, free air
CMT60N06
N-C
HANNEL
Logic Level Power M
OSFET
2004/05/28
Preliminary
rev.0.1
Champion Microelectronic Corporation
Page 2
ORDERING INFORMATION
Part Number
Package
CMT60N06 TO-220
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25.
CMT60N06
Characteristic Symbol
Min
Typ
Max
Units
OFF Characteristics
Drain-to-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250 A)
V
DSS
60
V
Breakdown Voltage Temperature Coefficient
(Reference to 25
,
I
D
= 250 A)
V
DSS
/T
J
0.069 mV/
Drain-to-Source Leakage Current
(V
DS
= 60 V, V
GS
= 0 V, T
J
= 25)
(V
DS
= 48 V, V
GS
= 0 V, T
J
= 150)
I
DSS
25
250
A
Gate-to-Source Forward Leakage
(V
GS
= 20 V)
I
GSS
100
nA
Gate-to-Source Reverse Leakage
(V
GS
= -20 V)
I
GSS
-100
nA
ON Characteristics
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 A)
V
GS(th)
1.0 2.0 3.0 V
Static Drain-to-Source On-Resistance (Note 4)
(V
GS
= 10 V, I
D
= 60A)
R
DS(on)
15.8
18
m
Forward Transconductance (V
DS
= 15 V, I
D
= 60A) (Note 4)
g
FS
36
S
Dynamic Characteristics
Input Capacitance
C
iss
1430
pF
Output Capacitance
C
oss
420
pF
Reverse Transfer Capacitance
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
C
rss
88
pF
Total Gate Charge (V
GS
= 10 V)
Q
g
37.7 nC
Gate-to-Source Charge
Q
gs
8.4 nC
Gate-to-Drain ("Miller") Charge
(V
DS
= 30 V, I
D
= 60 A,
V
GS
= 10 V) (Note 5)
Q
gd
9.8 nC
Resistive Switching Characteristics
Turn-On Delay Time
t
d(on)
12.1 ns
Rise Time
t
rise
64
ns
Turn-Off Delay Time
t
d(off)
69
ns
Fall Time
(V
DD
= 30 V, I
D
= 60 A,
V
GS
= 10 V,
R
G
= 9.1) (Note 5)
t
fall
39
ns
Source-Drain Diode Characteristics
Continuous Source Current
(Body Diode)
I
S
60
A
Pulse Source Current (Body Diode)
Integral pn-diode in MOSFET
I
SM
241
A
Diode Forward On-Voltage
(I
S
= 60 A, V
GS
= 0 V)
V
SD
1.5
V
Reverse Recovery Time
t
rr
55
ns
Reverse Recovery Charge
(I
F
= 60A, V
GS
= 0 V,
d
i
/d
t
= 100A/s)
Q
rr
110
nC
CMT60N06
N-C
HANNEL
Logic Level Power M
OSFET
2004/05/28
Preliminary
rev.0.1
Champion Microelectronic Corporation Page 3
Note 1: T
J
= +25 to +175
Note 2: Repetitive rating; pulse width limited by maximum junction temperature.
Note 3: I
SD
= 60A, di/dt <100A/s, V
DD
< BV
DSS
, T
J
= +175
Note 4: Pulse width < 250s; duty cycle<2%
Note 5: Essentially independent of operating temerpature.
t
p
, Rectangular Pulse Duration (s)
T
C
, Case Temperature (
o
C)
Figure 3. Maximum Continuous Drain Current
vs Case Temperature
P
D
, Po
wer Dissipatio
n (
W
)
T
C
, Case Temperature (
o
C)
V
DS
, Drain-to-Source Voltage (V)
40
I
D
, Drain Current (A)
I
D
, Drain Current
(A)
R
DS(O
N)
, Drai
n-t
o
-Sou
rce
ON Resistance (
m
)
V
GS
, Gate-to-Source Voltage (V)
Figure 4. Typical Output Characteristics
Figure 5. Typical Drain-to-Source ON Resistance
vs Gate Voltage and Drain Current
30
10
0
60
100
80
1.000
0.100
0.010
0
0
Figure 2. Maximum Power Dissipation
vs Case Temperature
0
5
10
6
7
8
9
10
25
50
75
100
125
150
25
50
75
100
125
150
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
20
15
NOTES:
DUTY FACTOR: D=t1/t2
PEAK T
J
=P
DM
x Z
JC
x R
JC
+T
C
20%
10%
5%
2%
single pulse
1%
P
DM
t
1
t
2
V
GS
= 10V
V
GS
= 6V
PULSE DURATION = 250 S
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case
V
GS
= 3.5V
V
GS
= 4.5V
V
GS
= 8V
V
GS
= 15V
V
GS
= 4V
V
GS
= 5V
100
Duty Cycle
45
50
40
30
20
4
3
I
D
= 14A
I
D
= 28A
I
D
= 55 A
5
Z
JC
,
Therm
a
l
Im
pedance
PULSE DURATION = 250 S
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
50%
0.001
120
200
35
25
40
20
40
180
160
140
80
60
20
175
120
140
175
70
60
50
V
GS
= 3V
220
CMT60N06
N-C
HANNEL
Logic Level Power M
OSFET
2004/05/28
Preliminary
rev.0.1
Champion Microelectronic Corporation Page
4
Figure 6. Maximum Peak Current Capability
Figure 10. Typical Drain-to-Source ON Resistance
Figure 9. Typical Drain-to-Source ON Resistance
vs Drain Current
t
p
, Pulse Width (s)
I
DM
, Pe
ak
Current (A)
10000
100
1
V
GS
, Gate-to-Source Voltage (V)
I
D
, Drai
n-t
o
-Sou
r
ce Current
(A)
t
AV
, Time in Avalanche (s)
I
AS
, A
v
alanc
h
e
Current (A)
1000
100
10
1
I
D
, Drain Current (A)
T
J
, Junction Temperature (
o
C)
R
D
S
(ON)
, Drain-to
-Source
Resista
n
ce (Normalized)
2.5
2.0
1.5
0.5
1.0.
R
DS(
ON)
,
Drain-to-Source ON
Resistance
(m
)
15
10
5
0
Figure 7. Typical Transfer Characteristics
Figure 8. Unclamped Inductive Switching Capability
1E-6
1E-3
10E-3
100E-3
10E-6
100E-6
-75 -50 -25
0
25
50
75 100 125 150
0
50
100
150
200
250
1.5
2.0
2.5
3.0
3.5
1E-6
10E-6
100E-6
1E-3
10E-3
100E-3
1E+0
10E+0
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
I25
150 TC
125
----------------------
=
PULSE DURATION = 250 s
DUTY CYCLE = 0.5% MAX
V
DS
= 10 V
+175
o
C
+25
o
C
-55
o
C
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
V
GS
=10V
PULSE DURATION = 250 s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 15A
1000
4.0
If R
0: t
AV
= (L/R) ln[(I
AS
R)/(1.3BV
DSS
-V
DD
)+1]
If R= 0: t
AV
= (LI
AS
)/(1.3BV
DSS
-V
DD
)
R equals total Series resistance of Drain circuit
10
20
25
30
35
40
10
vs Junction Temperature
V
GS
= 10V
PULSE DURATION = 10 s
DUTY CYCLE = 0.5% MAX
T
C
=25C
20
30
40
50
175
2004/05/28
Preliminary
rev.0.1
Champion Microelectronic Corporation Page
5
CMT60N06
N-C
HANNEL
Logic Level Power M
OSFET
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