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1-31
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TUNING VARACTOR
Selection guide
Selection Guide
PAGE
SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR
1-32
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR
-
VBR = 30 V
1-34
-
VBR = 45 V
1-35
SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
1-36
MICROWAVE SILICON HYPERABRUPT JUNCTION TUNING VARACTOR
1-39
A tuning varactor is a P-N diode that acts as a voltage controlled capacitor. These devices perform the
same function as the familiar, bulky, air dielectric stacked capacitors featured in traditional broadcast
band receivers.
TUNING VARACTOR
1-32
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
Description
This series of silicon tuning varactors have an epitaxial mesa design with a high temperature
passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family
is designed for a low cost medium to high volume market that may be supplied in tape and reel
for automated pick and place assembly on surface mount circuit boards.
Applications
The DH71000 series abrupt tuning varactor are offered in a large selection of capacitance range.
They provide the highest Q factor (low reverse series resistance) available for a 30 volts silicon device.
Typical applications include low noise narrow and moderate frequency bandwidth applications
(VCO mainly) from HF to Microwave frequencies (up to 3 GHz). Other applications are voltage tuned
filters, phase shifters, delay line, etc.
NOTE: Variation of the junction capacitance versus reverse voltage follows this equation:
C
j
(V
r
)
C
j
(0 V)
1 + V
r
V
r
: Reverse
voltage
:
Built-in potential .7V for Si
:
.5 for abrupt tuning varactor
TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
[ ]
SOT23 SURFACE MOUNT SILICON ABRUPT
TUNING VARACTOR
=
1-33
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
TUNING VARACTOR
Plastic package Surface Mount Silicon abrupt tuning varactor
DH71010
30
1.0 20%
4.0
4300
DH71016
30
1.6 20%
4.5
4100
DH71020
30
2.0 20%
4.6
3900
DH71030
30
3.0 20%
4.7
3400
DH71045
30
4.5 20%
4.8
2200
DH71067
30
6.7 10%
4.9
2600
DH71100
30
10 10%
5.0
2200
(1)
Other tolerance on request
Temperature ranges:
Operating junction (T
j
):
-55 C to +125 C
Storage:
-65 C to +150 C
min.
(1)
V
pF
Electrical
Breakdown
Junction
Tuning
Figure
parameters
voltage
capacitance
ratio
of merit
V
BR
Cj
Q
Test Conditions
I
R
= 10 A
F = 1 MHz
Cj0V/Cj30V
V
R
= 4 V
V
R
= 4 V
F = 50 MHz
Electrical characteristics at Ta = +25 C
Reverse breakdown voltage, Vb = @10 A: 30 V min.
Type
typ.
typ.
Packages
SOD323
SOT23
SOT23
SOT23
SOT143
Packages
DH71010
DH71010-60
DH71010-51
DH71010-53
DH71010-54
DH71010-70
DH71016
DH71016-60
DH71016-51
DH71016-53
DH71016-54
DH71016-70
DH71020
DH71020-60
DH71020-51
DH71020-53
DH71020-54
DH71020-70
DH71030
DH71030-60
DH71030-51
DH71030-53
DH71030-54
DH71030-70
DH71045
DH71045-60
DH71045-51
DH71045-53
DH71045-54
DH71045-70
DH71067
DH71067-60
DH71067-51
DH71067-53
DH71067-54
DH71067-70
DH71100
DH71100-60
DH71100-51
DH71100-53
DH71100-54
DH71100-70
(1) Other configuration available on request.
How to order?
DH71010
-
51
T3
Diode type
Package
Conditioning
information
51: single SOT23
T3: 3000 pieces
53: dual common
tape & reel
cathode SOT23
T10: 10000 pieces
54: dual common
tape & reel
anode SOT23
blank: bulk
60: single SOD323
70: dual SOT143
1-34
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
typ.
20 % (2)
min.
Cb= 0.18 pF (3) min.
Cb= 0.12 pF (3) min.
EH71004
C2a
50
0.4
4500
DH71004
F27d
3.0
M208
3.3
EH71006
C2a
60
0.6
4500
DH71006
F27d
3.4
M208
3.7
EH71008
C2a
70
0.8
4400
DH71008
F27d
3.7
M208
4.0
EH71010
C2a
80
1.0
4300
DH71010
F27d
4.0
M208
4.3
EH71012
C2a
90
1.2
4200
DH71012
F27d
4.3
M208
4.5
EH71016
C2a
100
1.6
4100
DH71016
F27d
4.5
M208
4.6
EH71020
C2a
110
2.0
3900
DH71020
F27d
4.6
M208
4.7
EH71025
C2a
120
2.5
3600
DH71025
F27d
4.6
M208
4.8
EH71030
C2a
140
3.0
3400
DH71030
F27d
4.7
M208
4.8
EH71037
C2a
150
3.7
3200
DH71037
F27d
4.7
M208
4.8
EH71045
C2a
170
4.5
3000
DH71045
F27d
4.8
M208
4.9
EH71054
C2a
180
5.4
2800
DH71054
F27d
4.8
M208
4.9
10 % (2)
Cb= 0.18 pF (3)
Cb= 0.2 pF (3)
EH71067
C2a
200
6.7
2600
DH71067
F27d
4.9
BH142
4.9
EH71080
C2b
220
8.0
2400
DH71080
F27d
5.0
BH142
5.0
EH71100
C2b
250
10.0
2200
DH71100
F27d
5.0
BH142
5.0
EH71120
C2b
270
12.0
2000
DH71120
F27d
5.1
BH142
5.1
EH71150
C2b
300
15.0
1800
DH71150
F27d
5.1
BH142
5.1
EH71180
C2b
330
18.0
1700
DH71180
F27d
5.2
BH142
5.2
EH71200
C2b
350
20.0
1500
DH71200
F27d
5.2
BH142
5.2
EH71220
C2b
370
22.0
1400
DH71220
F27d
5.2
BH142
5.2
EH71270
C2b
410
27.0
1300
DH71270
F27d
5.2
BH142
5.2
EH71330
C2c
450
33.0
1200
DH71330
F27d
5.2
BH142
5.2
EH71390
C2c
500
39.0
950
DH71390
F27d
5.2
BH142
5.2
EH71470
C2c
540
47.0
750
DH71470
F27d
5.2
BH142
5.2
EH71560
C2c
590
56.0
650
DH71560
F27d
5.2
BH142
5.2
EH71680
C2c
650
68.0
500
DH71680
F27d
5.2
BH142
5.2
EH71820
C2d
720
82.0
400
DH71820
F27d
5.2
BH142
5.2
EH71999
C2d
800
100.0
300
DH71999
F27d
5.2
BH142
5.2
V
BR
30 V
This series of high Q epi-junction microwave tuning varactors (30 V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to Ku band.
Description
(1) Custom cases available on request
Temperature ranges:
(2) Closer capacitance tolerances available on request
Operating junction (T
j
) : -55 C to +150 C
(3) C
T
= Cj + Cb
Storage
: -65 C to +175 C
Type
Case
m
pF
Type
Case
Case
C
ASE
C
ASE
C
APACITANCE
C
APACITANCE
Cb
Cb
V
R
= 4 V
V
R
= 4 V
f = 1 MH
Z
f = 50 MH
Z
Test Conditions
Gold
junction
Fig. of
Tuning
Tuning
dia
capacitance
merit
ratio
ratio
Cj
Q
C
TO
/C
T
30
C
TO
/C
T
30
Characteristics at 25C
V
BR
(10 A)
30 V
Standard cases
Other cases
C
HIP
D
IODES
C
HIP AND
P
ACKAGED
D
IODES
P
ACKAGED
D
IODES
(1)
HIGH Q SILICON ABRUPT JUNCTION TUNING VARACTOR
1-35
SALES OFFICES: VISIT OUR WEB SITE AT
http://www.temex.net
TUNING VARACTOR
High Q silicon abrupt junction tuning varactor
typ.
20 % (2)
min.
Cb=0.18pF (3) min. Cb =0.12pF (3) min.
EH72004
C2a
60
0.4
3000
DH72004
F27d
3.5
M208
3.7
EH72006
C2a
80
0.6
2900
DH72006
F27d
3.9
M208
4.1
EH72008
C2a
90
0.8
2800
DH72008
F27d
4.2
M208
4.5
EH72010
C2a
110
1.0
2700
DH72010
F27d
4.5
M208
4.7
EH72012
C2a
110
1.2
2700
DH72012
F27d
4.7
M208
4.9
EH72016
C2a
120
1.6
2600
DH72016
F27d
5.0
M208
5.2
EH72020
C2a
140
2.0
2500
DH72020
F27d
5.2
M208
5.5
EH72025
C2a
150
2.5
2400
DH72025
F27d
5.4
M208
5.6
EH72030
C2a
170
3.0
2300
DH72030
F27d
5.5
M208
5.7
EH72037
C2a
190
3.7
2200
DH72037
F27d
5.6
M208
5.7
EH72045
C2a
210
4.5
2000
DH72045
F27d
5.7
M208
5.8
EH72054
C2a
230
5.4
1900
DH72054
F27d
5.8
M208
5.9
10 % (2)
Cb=0.18pF (3)
Cb = 0.2pF (3)
EH72067
C2b
250
6.7
1800
DH72067
F27d
5.9
BH142
6.0
EH72080
C2b
280
8.0
1700
DH72080
F27d
5.9
BH142
6.0
EH72100
C2b
310
10.0
1600
DH72100
F27d
6.0
BH142
6.0
EH72120
C2b
340
12.0
1500
DH72120
F27d
6.0
BH142
6.0
EH72150
C2b
380
15.0
1400
DH72150
F27d
6.0
BH142
6.0
EH72180
C2b
420
18.0
1300
DH72180
F27d
6.0
BH142
6.0
EH72200
C2b
440
20.0
1200
DH72200
F27d
6.0
BH142
6.0
EH72220
C2c
470
22.0
1100
DH72220
F27d
6.0
BH142
6.0
EH72270
C2c
520
27.0
1000
DH72270
F27d
6.0
BH142
6.0
EH72330
C2c
570
33.0
900
DH72330
F27d
6.0
BH142
6.0
EH72390
C2c
620
39.0
800
DH72390
F27d
6.0
BH142
6.0
10 % (2)
Cb=0.18pF (3)
EH72470
C2d
680
47.0
700
DH72470
BH28
6.0
EH72560
C2d
740
56.0
600
DH72560
BH28
6.0
EH72680
C2d
820
68.0
450
DH72680
BH28
6.0
10 % (2)
Cb=0.4pF (3)
EH72820
C2g
900
82.0
350
DH72820
BH141
6.0
EH72999
C2g
1000
100.0
250
DH72999
BH141
6.0
This series of high Q epi-junction microwave tuning varactors (45 V) incorporates a passivated mesa
technology. It is well suited for frequency tuning applications up to X band.
Description
(1)
Custom cases available on request
Temperature ranges:
(2)
Closer capacitance tolerances available on request
Operating junction (Tj) : -55 C to +150 C
(3)
CT = Cj + Cb
Storage
:
-65 C to +175 C
Type
Case
m
pF
Type
Case
Case
Case
Case
Capacitance
Capacitance
Cb
Cb
Test conditions
G
OLD
Junction
Fig. of
Tuning
Tuning
D
IA
C
apacitance
M
erit
Ratio
Ratio
Cj
Q
C
TO
/C
T
45
C
TO
/C
T
45
Characteristics at 25 C
V
BR
(10 A)
45 V
S
TANDARD
C
ASES
O
THER
C
ASES
Chip diodes
Chip and packaged diodes
Packaged diodes (1)
V
BR
45 V
V
R
= 4 V
V
R
= 4 V
f = 1 MH
Z
f = 50 MH
Z
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