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Электронный компонент: EB-ASG101-900

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1/6 www.ASB.co.kr March. 2004
Parameters
Units
Min.
Typ.
Max.
Frequency Range
MHz
250 - 2500
Gain dB
22
Input VSWR
-
1.5
Output VSWR
-
1.5
Output IP3
2)
dBm
28
31
33
Noise Figure
dB
3.0
Output P1dB
dBm
18
Supply Current
mA
40
55
75
Supply Voltage
V
4.5
Thermal Resistance, R
th
4)
C/W
99.6
1) Measurement conditions are as follows: T = 25
C, V
s
= 4.5 V, Freq. = 900 MHz, 50 ohm system.
2) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line.
3) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz.
4) The thermal resistance was determined at a DC power of 0.243 W (V
CC
=4.5 V, I
C
=54 mA) with RF signal and a lead temperature
of 90.3
C.
Parameters
Rating
Remarks
Operating Case Temperature
-40 to
+ 85C
Storage Temperature
-40 to
+ 150C
Supply Voltage
6 V
Input RF Power (continuous)
+6 dB above Input P1dB
Application circuit for 900 MHz
Application circuit for 2 GHz
Part Number
Description
ASG101
High linearity medium power amplifier
(Available in tape and reel)
EB-ASG101-900 Fully
assembled evaluation kit (900 MHz)
EB-ASG101-2000 Fully
assembled evaluation kit (2000 MHz)
SiGe Technology
22 dB Gain at 900 MHz
+18 dBm P1dB
+31 dBm Output IP3
3.0 dB Noise Figure
Single +4.5 V Supply
SOT-89 Surface Mount Package
Features Description
Package Style: SOT-89
Specifications
1)
Applications
Absolute Maximum Ratings
ASG101
DC-3000 MHz SiGe HBT Amplifier
The ASG101 is designed for high linearity, high
gain, and low noise over a wide range of fre-
quency, being suitable for use in both receiver
and transmitter of wireless and wireline telecom-
munication systems. The product is manufactured
using a state-of-the-art SiGe HBT process of the
company's own, making it cost-effective and
highly reliable. The amplifiers are available in
a low cost SOT-89 package completing stringent
DC and RF tests.
CDMA, GSM, W-CDMA, PCS
PA Driver Amplifier
Gain Block
CATV Amplifier
IF Amplifier
Ordering Information
Application Note
Website: www.asb.co.kr
E-mail: sales@asb.co.kr
Tel: (82) 42-528-7220
Fax: (82) 42-528-7222
ASB Inc., 4th Fl. Venture Town
Bldg., 367-17 Goijeong-Dong,
Seo-Gu, Daejon 302-716, Korea
More Information
2/6 www.ASB.co.kr March. 2004
a
Function Pin
No.
Input 1
Ground 2
Output 3
(Unit: mm)
ASG101
Outline Drawing
Pin Description
(Unit: mm)
1
2
3
2
Mounting Configuration
Note: 1. The number and size of ground via holes in a circuit board is critical for thermal
and RF grounding considerations.
2. We recommend that the ground via holes be placed on the bottom of lead pin 2
for better RF and thermal performance, as shown in the drawing at the left side.
Land Pattern
3/6 www.ASB.co.kr March. 2004
1) S11 & S22 can be improved, at a specific frequency, by moving
an input shunt capacitor (C2) along an input transmission line.
2) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
ASG101
Application Circuit: 900 MHz
Typical Performance
S-parameters
Frequency 900
MHz
Magnitude S21
22 dB
Magnitude S11
1)
-16
dB
Magnitude S22
1)
-19
dB
Output P1dB
18 dBm
Output IP3
2)
31
dBm
Noise Figure
3.0 dB
Supply Voltage
4.5 V
Current 55
mA
Board Layout (FR4, 40x40 mm
2
, 0.8T)
Schematic
Gain vs. Temperature
L2=10nH
R1=10 k
L1=22 nH
C3=100pF
Vs=4.5V
RF IN
RF OUT
C4=
100 pF
C5=
1000 pF
C1=6 pF
50
ASG101
5.5 mm
C2=5.6 pF
50
4.5 mm
C6=
1
F
-60
-40
-20
0
20
40
60
80
100
16
18
20
22
24
26
28
Frequency = 900MHz
600
700
800
900
1000
1100
1200
-35
-30
-25
-20
-15
-10
-5
0
S11
(
d
B)
Frequency (MHz)
+ 85
C
+ 25
C
- 40
C
600
700
800
900
1000
1100
1200
-35
-30
-25
-20
-15
-10
-5
0
S1
2 (
d
B
)
Frequency (MHz)
+85
C
+25
C
-40
C
4/6 www.ASB.co.kr March. 2004
ASG101
600
700
800
900
1000
1100
1200
10
15
20
25
30
35
+ 85
C
+ 25
C
- 40
C
600
700
800
900
1000
1100
1200
-35
-30
-25
-20
-15
-10
-5
0
+ 85
C
+ 25
C
- 40
C
Output P1 vs. Frequency
Output IP3 vs. Frequency
(P
out
per tone = 5 dBm)
Output IP3 vs. Tone Power
800
850
900
950
1000
10
12
14
16
18
20
22
24
26
O
u
t
p
ut P1
dB (dBm)
Frequency (MHz)
+ 85
C
+ 25
C
- 40
C
800
820
840
860
880
900
920
940
25
30
35
40
45
50
+ 85
C
+ 25
C
- 40
C
2
3
4
5
6
7
8
9
25
30
35
40
45
50
Frequency = 900 MHz
+ 85
C
+ 25
C
- 40
C
5/6 www.ASB.co.kr March. 2004
1) S11 & S22 can be improved, at a specific frequency, by moving
an input shunt capacitor (C2) along an input transmission line.
2) OIP3 is measured with two tones at an output power of +5 dBm/tone
separated by 1 MHz.
Gain vs. Temperature
Application Circuit: 2000 MHz
Typical Performance
Frequency 2000
MHz
Magnitude S21
15 dB
Magnitude S11
1)
-20
dB
Magnitude S22
1)
-17
dB
Output P1dB
18 dBm
Output IP3
2)
31
dBm
Noise Figure
4.0 dB
Supply Voltage
4.5 V
Current 55
mA
Board Layout (FR4, 40x40 mm
2
, 0.8T)
S-parameters
Schematic
ASG101
L2=22nH
R1=10 k
L1=22 nH
C3=100pF
Vs=4.5V
RF IN
RF OUT
C4=
100 pF
C5=
1000 pF
C1=2 pF
50
ASG101
5.5 mm
C2=1.5 pF
50
4.5 mm
C6=
1
F
-60
-40
-20
0
20
40
60
80
100
10
12
14
16
18
20
Frequency = 2GHz
1600
1700
1800
1900
2000
2100
2200
2300
2400
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
S11
(
d
B
)
Frequency (MHz)
+ 85
C
+ 25
C
- 40
C
1600
1700
1800
1900
2000
2100
2200
2300
2400
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
S1
2 (
d
B
)
Frequency (MHz)
+ 85
C
+ 25
C
- 40
C
6/6 www.ASB.co.kr March. 2004
ASG101
1600
1700
1800
1900
2000
2100
2200
2300
2400
8
10
12
14
16
18
20
22
24
26
+ 85
C
+ 25
C
- 40
C
1600
1700
1800
1900
2000
2100
2200
2300
2400
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
+ 85
C
+ 25
C
- 40
C
Output P1 vs. Frequency
Output IP3 vs. Frequency
(P
out
per tone = 5 dBm)
Output IP3 vs. Tone Power
1800
1850
1900
1950
2000
2050
2100
14
16
18
20
22
24
26
+ 85
C
+ 25
C
- 40
C
1800
1850
1900
1950
2000
2050
2100
25
30
35
40
45
50
+ 85
C
+ 25
C
- 40
C
0
1
2
3
4
5
6
7
8
25
30
35
40
45
50
+ 85
C
+ 25
C
- 40
C