Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
EC1089
InGaP HBT Gain Block
Product Information
The Communications Edge
TM
Product Features
x
10 2500 MHz
x
+24 dBm P1dB
x
+41 dBm OIP3
x
15.5 dB Gain at 900 MHz
x
12.2 dB Gain at 1900 MHz
x
Available in SOT-89 and
lead-free / green SOT-89
Package Styles
x
Internally matched to 50
:
Applications
x
Mobile Infrastructure
x
Final stage amplifiers for
Repeaters
x
Defense / Homeland Security
Product Description
The EC1089 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance across a broad range with
+41 dBm OIP3 and +24 dBm of compressed 1dB power. It
is housed in an industry standard SOT-89 SMT package.
The EC1089 is also available in a lead-free/green/RoHS-
compliant SOT-89 package. All devices are 100% RF and
DC tested.
The EC1089 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
EC1089 to maintain high linearity over temperature and
operate directly off a single +5 V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations.
Functional Diagram
RF IN
GND
RF OUT
GND
1
2
3
4
EC1089B / EC1089B-G
Specifications
(1)
Parameters
Units Min Typ Max
Operational Bandwidth
MHz
10
2500
Test Frequency
MHz
1900
Gain
dB
10.5
12.2
Input Return Loss
dB
15
Output Return Loss
dB
10
Output P1dB
dBm
+23.5
Output IP3
(2)
dBm
+40
+41
IS-95A Channel Power
@ -45 dBc ACPR
dBm
+17
Noise Figure
dB
5.9
Test Frequency
MHz
2140
Gain
dB
11.5
Output P1dB
dBm
+23.5
Output IP3
(2)
dBm
+40
Operating Current Range
mA
140
160
175
Device Voltage
V
+5
1. Test conditions unless otherwise noted: 25 C, Supply Voltage = +5 V, , in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Rating
Operating Case Temperature
-40 to +85
qC
Storage Temperature
-65 to +150
qC
RF Input Power (continuous)
+18 dBm
Device Voltage
+6 V
Device Current
220 mA
Junction Temperature
+250
qC
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(3)
Parameters
Units
Typical
Frequency
MHz
900
1900
2140
S21 - Gain
dB
15.5
12.2
11.5
S11 - Input R.L.
dB
-14
-15
-15
S22 - Output R.L.
dB
-10
-10
-10
Output P1dB
dBm
+24
+23.5
+23.5
Output IP3
dBm
+40
+41
+40
Noise Figure
dB
5.1
5.9
5.4
Supply Bias
+5 V @ 160 mA
3. Typical parameters reflect performance in a tuned application circuit: Supply Voltage = +5 V, I =
160 mA, +25
C
Ordering Information
Part No.
Description
EC1089B
InGaP HBT Gain Block
(leaded SOT-89 Pkg)
EC1089B-G
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-89 Pkg)
EC1089B-PCB900
900 MHz Evaluation Board
EC1089B-PCB1900 1900 MHz Evaluation Board
EC1089B-PCB2140 2140 MHz Evaluation Board
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
EC1089
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
Typical Device Data
S-Parameters (V
DS
= +5 V, I
cc
= 160 mA, T = 25
C, unmatched 50 ohm system)
0
0.5
1
1.5
2
2.5
Frequency (GHz)
Gain / Maximum Stable Gain
0
5
10
15
20
25
30
G
a
i
n
(
d
B
)
DB(|S[2,1]|)
DB(GMax)
0
1
.
0
1
.
0
-
1
.
0
1
0
.
0
10.0
-1
0.
0
5
.
0
5.0
-5
.0
2
.
0
2.
0
-2
.0
3
.
0
3.
0
-3
.0
4
.
0
4.
0
-4
.0
0
.
2
0.
2
-0.
2
0
.
4
0.
4
-0
.4
0
.
6
0
.6
-
0.
6
0
.
8
0
.
8
-
0
.
8
S11
Swp Max
6GHz
Swp Min
0.1GHz
0
1
.
0
1
.
0
-
1
.
0
1
0
.
0
10.0
-1
0.
0
5
.
0
5.0
-5
.0
2
.
0
2.
0
-2
.0
3
.
0
3.
0
-3
.0
4
.
0
4.
0
-4
.0
0
.
2
0.
2
-0.
2
0
.
4
0.
4
-0
.4
0
.
6
0.
6
-
0
.6
0
.
8
0
.
8
-
0
.
8
S22
Swp Max
6GHz
Swp Min
0.1GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The return loss plots are shown from 50 3000 MHz, with markers placed at 0.5 3.0 GHz in 0.5 GHz increments.
S-Parameters (V
DS
= +5 V, I
DS
= 160 mA, T = 25
C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
-3.61
-169.14
23.08
149.67
-30.46
17.14
-7.74
-128.38
100
-3.31
-173.35
21.93
148.90
-29.57
14.05
-7.80
-143.29
200
-2.62
179.12
19.02
146.43
-27.97
9.40
-6.40
-169.43
400
-2.62
173.23
17.74
136.11
-27.96
10.86
-6.33
-179.95
600
-2.54
168.30
16.69
123.77
-27.96
10.86
-6.09
173.78
800
-2.39
163.31
15.62
111.53
-27.96
10.62
-5.86
168.37
1000
-2.27
158.06
14.57
101.13
-26.02
9.88
-5.68
163.12
1200
-2.21
152.89
13.55
91.40
-26.02
8.87
-5.58
157.73
1400
-2.16
147.55
12.54
82.69
-26.02
7.57
-5.37
152.46
1600
-2.05
142.54
11.65
74.35
-26.02
5.95
-5.20
147.09
1800
-1.99
137.85
10.70
66.99
-25.08
4.22
-5.20
141.71
2000
-1.84
133.47
9.91
59.96
-24.44
2.37
-5.05
136.43
2200
-1.68
129.41
9.13
53.84
-24.44
0.24
-5.01
131.29
2400
-1.46
125.20
8.46
47.68
-24.44
-2.39
-4.89
126.16
2600
-1.33
120.48
7.85
41.30
-23.27
-5.53
-4.88
121.19
2800
-1.20
115.03
7.22
34.74
-23.10
-9.13
-4.73
116.28
3000
-1.17
109.05
6.62
27.78
-23.10
-12.86
-4.66
111.40
Device S-parameters are available for download off of the website at: http://www.wj.com
Application Circuit PC Board Layout
Circuit Board Material: .014" Getek, 4 layers (other layers added for rigidity), .062" total thickness, 1 oz copper
Microstrip line details: width = .026", spacing = .026"
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
EC1089
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
900 MHz Application Circuit (EC1089B-PCB900)
Typical RF Performance
Frequency
900 MHz
S21 Gain
15.5 dB
S11 Input Return Loss
-15dB
S22 Output Return Loss
-10 dB
Output IP3
(+11 dBm / tone, 1 MHz spacing)
+40 dBm
Output P1dB
+24 dBm
Noise Figure
5.1 dB
Supply Voltage
+5 V
Supply Current
160 mA
Measured parameters were taken at 25
C.
CAP
C=
ID=
56 pF
C4
CAP
C=
ID=
56 pF
C5
RES
R=
ID=
2700 Ohm
L2
CAP
C=
ID=
5.6 pF
C12
DIODE1
ID= D1
RES
R=
ID=
0 Ohm
L3
CAP
C=
ID=
56 pF
C1
CAP
C=
ID=
1000 pF
C2
CAP
C=
ID=
1e5 pF
C3
IND
L=
ID=
33 nH
L1
CAP
C=
ID=
1.0 pF
C13
SUBCKT
NET=
ID=
"EC1089B"
U1
PORT
Z=
P=
50 Ohm
1
PORT
Z=
P=
50 Ohm
2
Vcc = +5 V
5.6 V
C12 should be placed at the silk screen
marker "F" on the WJ evaluation board.
All passive components are of size 0603 unless otherwise noted.
size 1206
size 0805
The capacitor should be placed
14 @ 0.9GHz from pin 1.
C13 should be placed at the silk screen
marker "8" on the WJ evaluation board.
The capacitor should be placed
19 @ 0.9GHz from pin 3.
OIP3 vs. Frequency
37
38
39
40
41
42
43
44
600
700
800
900
1000
1100
Frequency (.9 GHz Matching)
O
I
P
3
(
d
B
m
)
25C
-40C
+85C
Average CDMA ACPR
40
45
50
55
60
65
70
75
80
85
10
12
14
16
18
Average output power (dBm)
A
C
P
R
(
d
B
c
)
Note: (IS95) ACPR1 measured at
750KHz, Forward 9 Channel
1900 MHz Application Circuit (EC1089B-PCB1900)
Typical RF Performance
Frequency
1900 MHz
S21 Gain
12.2 dB
S11 Input Return Loss
-15 dB
S22 Output Return Loss
-10 dB
Output IP3
(+11 dBm / tone, 1 MHz spacing)
+41 dBm
Output P1dB
+23 dBm
Noise Figure
5.9 dB
Supply Voltage
+5 V
Supply Current
160 mA
Measured parameters were taken at 25
C.
CAP
C=
ID=
56 pF
C4
CAP
C=
ID=
56 pF
C5
IND
L=
ID=
18 nH
L1
RES
R=
ID=
2700 Ohm
L2
IND
L=
ID=
2.7 nH
L3
CAP
C=
ID=
2.4 pF
C7
CAP
C=
ID=
1.2 pF
C13
DIODE1
ID= D1
CAP
C=
ID=
56 pF
C1
CAP
C=
ID=
1000 pF
C2
CAP
C=
ID=
1e5 pF
C3
SUBCKT
NET=
ID=
"EC1089B"
U1
PORT
Z=
P=
50 Ohm
1
PORT
Z=
P=
50 Ohm
2
Vcc = +5 V
5.6 V
marker "A" on the WJ evaluation board.
C7 should be placed at the silk screen
All passive components are of size 0603 unless otherwise noted.
5 @ 1.9GHz from pin 1.
The capacitor should be placed
34 @ 1.9GHz from pin 3.
The capacitor should be placed
marker "7" on the WJ evaluation board.
C13 should be placed at the silk screen
size 1206
size 0805
OIP3 vs. Temperature vs. Frequency
35
37
39
41
43
45
1600 1700 1800 1900 2000 2100
Frequency (MHz)
d
B
m
25C
-40C
85C
Average CDMA ACPR
40
45
50
55
60
65
70
75
80
85
10
12
14
16
18
Average output power (dBm)
A
C
P
R
(
d
B
c
)
Note: (IS95) ACPR1 measured at
750KHz, Forward 9 Channel
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
EC1089
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
2140 MHz Application Circuit (EC1089B-PCB2140)
Typical RF Performance
Frequency
2140 MHz
S21 Gain
11.5 dB
S11 Input Return Loss
-15 dB
S22 Output Return Loss
-10 dB
Output IP3
(+10 dBm / tone, 1 MHz spacing)
+40 dBm
Output P1dB
+23 dBm
Noise Figure
5.4 dB
Supply Voltage
+5 V
Supply Current
160 mA
Measured parameters were taken at 25
C.
CAP
C=
ID=
56 pF
C4
CAP
C=
ID=
56 pF
C5
IND
L=
ID=
18 nH
L1
RES
R=
ID=
2700 Ohm
L2
CAP
C=
ID=
1.5 pF
C12
CAP
C=
ID=
0.8 pF
C13
DIODE1
ID= D1
CAP
C=
ID=
1.5 pF
C6
CAP
C=
ID=
56 pF
C1
CAP
C=
ID=
1000 pF
C2
CAP
C=
ID=
1e5 pF
C3
SUBCKT
NET=
ID=
"EC1089B"
U1
PORT
Z=
P=
50 Ohm
1
PORT
Z=
P=
50 Ohm
2
Vcc = +5 V
5.6 V
All passive components are of size 0603 unless otherwise noted.
size 1206
size 0805
39 @ 2.14GHz from pin 3.
The capacitor should be placed
screen marker "6" on the WJ evaluation board.
C13 should be placed at the silk
33 @ 2.14GHz from pin 1.
The capacitor should be placed
screen marker "F" on the WJ evaluation board.
C12 should be placed at the silk
from pin 1.
C6 should be placed 19.5 @ 2.14GHz
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
EC1089
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
EC1089B (SOT-89 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Outline Drawing
Land Pattern
Product Marking
The component will be marked with an
"1089" designator with an alphanumeric lot
code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the "Application
Notes" section.
MSL / ESD Rating
ESD Rating: Class 1A
Value:
Passes between 250 and 500V
Test:
Human Body Model (HBM)
Standard:
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235
C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135" ) diameter drill and have a final plated
thru diameter of .25 mm (.010" ).
2. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
3. Mounting screws can be added near the part to fasten
the board to a heatsink. Ensure that the ground /
thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board
in the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material
and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are
in degrees.
Thermal Specifications
Parameter
Rating
Operating Case Temperature
-40 to +85
q C
Thermal Resistance
(1)
149
q C / W
Junction Temperature
(2)
204
q C
Notes:
1. The thermal resistance is referenced from the junction-
to-case at a case temperature of 85
C.
2. This corresponds to the typical biasing condition of +5V,
160 mA at an 85
C case temperature. A minimum
MTTF of 1 million hours is achieved for junction
temperatures below 247
C.
MTTF vs. GND Tab Temperature
1.0
10.0
100.0
1000.0
60
70
80
90
100
110
120
Tab Temperature (C)
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
December 2004
EC1089
Watt, High Linearity InGaP HBT Amplifier
Product Information
The Communications Edge
TM
EC1089B-G (Green / Lead-free SOT-89 Package) Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260
qC reflow temperature) and leaded
(maximum 245
qC reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Land Pattern
Product Marking
The component will be marked with an
" 1089G" designator with an alphanumeric lot
code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the " Application
Notes" section.
MSL / ESD Rating
ESD Rating: Class 1A
Value:
Passes between 250 and 500V
Test:
Human Body Model (HBM)
Standard:
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +260
C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135" ) diameter drill and have a final plated
thru diameter of .25 mm (.010" ).
2. Add as much copper as possible to inner and outer
layers near the part to ensure optimal thermal
performance.
3. Mounting screws can be added near the part to fasten
the board to a heatsink. Ensure that the ground /
thermal via region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board
in the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material
and construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are
in degrees.
Thermal Specifications
Parameter
Rating
Operating Case Temperature
-40 to +85
q C
Thermal Resistance
(1)
149
q C / W
Junction Temperature
(2)
204
q C
Notes:
1. The thermal resistance is referenced from the junction-
to-case at a case temperature of 85
C.
2. This corresponds to the typical biasing condition of +5V,
160 mA at an 85
C case temperature. A minimum
MTTF of 1 million hours is achieved for junction
temperatures below 247
C.
MTTF vs. GND Tab Temperature
1.0
10.0
100.0
1000.0
60
70
80
90
100
110
120
Tab Temperature (C)
PDF 
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