Excelics
EFA480B
DATA SHEET
Low Distortion GaAs Power FET
+34.0dBm TYPICAL OUTPUT POWER
10.0dB TYPICAL POWER GAIN AT 8GHz
0.5 X 4800 MICRON RECESSED
"MUSHROOM" GATE
Si
3
N
4
PASSIVATION AND PLATED HEAT SINK
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
Idss SORTED IN 80mA PER BIN RANGE
ELECTRICAL CHARACTERISTICS (T
a
= 25
O
C)
SYMBOLS PARAMETERS/TEST
CONDITIONS MIN
TYP
MAX
UNIT
P
1dB
Output Power at 1dB Compression f = 8GHz
Vds=8V, Ids=50% Idss f =12GHz
32.0
34.0
34.0
dBm
G
1dB
Gain at 1dB Compression f = 8GHz
Vds=8V, Ids=50% Idss f =12GHz
4.0
10.0
6.0
dB
PAE
Gain at 1dB Compression
Vds=8V, Ids=50% Idss f =8GHz
35
%
Idss
Saturated Drain Current Vds=3V, Vgs=0V
800
1360
1760
mA
Gm
Transconductance Vds=3V, Vgs=0V
560
720
mS
Vp
Pinch-off Voltage Vds=3V, Ids=10mA
-2.0
-3.5
V
BVgd
Drain Breakdown Voltage Igd=4.8mA
-12
-15
V
BVgs
Source Breakdown Voltage Igs=4.8mA
-7
-14
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
10
o
C/W
MAXIMUM RATINGS AT 25
O
C
SYMBOLS PARAMETERS ABSOLUTE
1
CONTINUOUS
2
Vds
Drain-Source Voltage
12V
8V
Vgs
Gate-Source Voltage
-8V
-4V
Ids
Drain Current
Idss
1.4A
Igsf
Forward Gate Current
120mA
20mA
Pin
Input Power
32dBm
@3dB Compression
Tch
Channel Temperature
175
o
C
150
o
C
Tstg
Storage Temperature
-65/175
o
C
-65/150
o
C
Pt
Total Power Dissipation
14 W
11 W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
Chip Thickness: 50
10 microns
(with > 20 microns Gold Plated Heat Sink (PHS) )
All Dimensions In Microns
960
50
120
48
95
40
156
420
45
110
D
G
S
D
D
D
G
G
G
S
S
S
S
EFA480B
DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS
8V, 1/2 Idss
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.500 0.944 -115.5 11.585 117.1 0.019 33.5 0.384 -159.9
1.000 0.929 -145.4 6.478 98.5 0.021 21.3 0.425 -165.4
1.500 0.926 -157.1 4.413 88.9 0.021 18.2 0.440 -166.5
2.000 0.925 -163.3 3.326 81.9 0.021 17.7 0.453 -166.2
2.500 0.925 -167.2 2.659 76.0 0.021 18.5 0.465 -165.6
3.000 0.925 -169.9 2.208 70.8 0.021 20.0 0.479 -164.8
3.500 0.925 -171.9 1.883 65.9 0.021 22.0 0.494 -164.1
4.000 0.926 -173.6 1.636 61.3 0.021 24.4 0.510 -163.6
4.500 0.927 -174.9 1.443 57.0 0.022 27.0 0.526 -163.2
5.000 0.928 -176.1 1.287 52.7 0.022 29.8 0.543 -162.9
5.500 0.928 -177.1 1.158 48.6 0.022 32.8 0.561 -162.9
6.000 0.929 -178.0 1.050 44.7 0.022 35.9 0.579 -162.9
6.500 0.930 -178.9 0.958 40.8 0.023 39.0 0.596 -163.1
7.000 0.931 -179.7 0.878 37.1 0.023 42.0 0.613 -163.5
7.500 0.932 179.6 0.809 33.5 0.024 45.0 0.630 -163.9
8.000 0.933 178.9 0.747 30.0 0.025 47.8 0.647 -164.5
8.500 0.934 178.3 0.693 26.6 0.026 50.4 0.663 -165.1
9.000 0.935 177.6 0.644 23.4 0.027 52.9 0.679 -165.7
9.500 0.936 177.0 0.600 20.2 0.028 55.1 0.694 -166.5
10.000 0.937 176.4 0.561 17.1 0.030 57.1 0.708 -167.3
Note: The data included 0.7 mils diameter Au bonding wires:
4 gate wires, 20 mils each; 4 drain wires, 12 mils each; 10 source wires, 7 mils each.
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