ELM14801AA
Dual P-Channel Enhancement Mode Power MOS FET
General Description
ELM14801AA
uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It
may be used in a common drain arrangement to form a bidirectional blocking switch.
Features
V
DS
(V) = -30V
I
D
= -5A
R
DS(ON)
< 49m
(V
GS
= -10V)
R
DS(ON)
< 64m
(V
GS
= -4.5V)
R
DS(ON)
< 120m
(V
GS
= -2.5V)
SOP-8
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