SWITCHING CHARACTERISTICS (at T
amb
= 25C )
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS
Turn-On Time
t
on
35
ns
V
CC
=-30V, V
BE(off )
=-2V
I
C
=-150mA, I
B1
=-15mA
(See Fig.1)
Turn-Off Time
t
off
255
ns
V
CC
=-30V, I
C
=-150mA
I
B1
=I
B2
=-15mA
(See Fig. 2)
SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTOR
ISSUE 2 - MARCH 1995
7
PARTMARKING DETAILS:
FMMT4402 - 2K
FMMT4403 - 2L
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-600
A
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
FMMT4402
FMMT4403
UNIT CONDITIONS
MIN.
MAX.
MIN.
MAX.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-40
-40
V IC=-1mA, I
B
=0
Collector-Base
Breakdown Voltage
V
(BR)CBO
-40
-40
V I
C
=-0.1mA, I
E
=0
Emitter-Base
Breakdown Current
V
(BR)EBO
-5
-5
V IE=-0.1mA, I
C
=0
Collector-Emitter
Cut-Off Current
I
CEX
-0.1
-0.1
A V
CE
=-35V
V
EB(off)
=-0.4V
Base Cut-Off
Current
I
BEX
-0.1
-0.1
A V
CE
=-35V
V
EB(off)
=-0.4V
Static Forward
Current
TransferRatio
h
FE
30
50
50
20
150
30
60
100
100
20
300
I
C
=-0.1mA, V
CE
=-1V
I
C
=-1mA, V
CE
=-1V
I
C
=-10mA, V
CE
=-1V
I
C
=-150mA,V
CE
=-2V*
I
C
=-500mA,V
CE
=-2V*
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.4
-0.75
-0.4
-0.75
V
V
I
C
=-150mA,I
B
=-15mA*
I
C
=-500mA,I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.75
-0.95
-1.3
-0.75
-0.95
-1.3
V
V
I
C
=-150mA,I
B
=-15mA*
I
C
=-500mA,I
B
=-50mA
Transition
Frequency
f
T
150
200
MHz I
C
=-20mA,V
CE
=-10V
f=100MHz
Output Capacitance C
obo
8.5
8.5
pF V
CB
=-10 V,I
E
=0
f=100kHz
Input Capacitance
C
ibo
30
30
pF V
BE
=0.5V
I
C
=0, f=100kHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT4402
FMMT4403
C
B
E
PAGE NUMBER
FMMT4402
FMMT4403
PAGE NUMBER
SWITCHING CHARACTERISTICS (at T
amb
= 25C )
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS
Turn-On Time
t
on
35
ns
V
CC
=-30V, V
BE(off )
=-2V
I
C
=-150mA, I
B1
=-15mA
(See Fig.1)
Turn-Off Time
t
off
255
ns
V
CC
=-30V, I
C
=-150mA
I
B1
=I
B2
=-15mA
(See Fig. 2)
SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTOR
ISSUE 2 - MARCH 1995
7
PARTMARKING DETAILS:
FMMT4402 - 2K
FMMT4403 - 2L
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-40
V
Collector-Emitter Voltage
V
CEO
-40
V
Emitter-Base Voltage
V
EBO
-5
V
Continuous Collector Current
I
C
-600
A
Power Dissipation at T
amb
=25C
P
tot
330
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25C unless otherwise stated)
PARAMETER
SYMBOL
FMMT4402
FMMT4403
UNIT CONDITIONS
MIN.
MAX.
MIN.
MAX.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-40
-40
V IC=-1mA, I
B
=0
Collector-Base
Breakdown Voltage
V
(BR)CBO
-40
-40
V I
C
=-0.1mA, I
E
=0
Emitter-Base
Breakdown Current
V
(BR)EBO
-5
-5
V IE=-0.1mA, I
C
=0
Collector-Emitter
Cut-Off Current
I
CEX
-0.1
-0.1
A V
CE
=-35V
V
EB(off)
=-0.4V
Base Cut-Off
Current
I
BEX
-0.1
-0.1
A V
CE
=-35V
V
EB(off)
=-0.4V
Static Forward
Current
TransferRatio
h
FE
30
50
50
20
150
30
60
100
100
20
300
I
C
=-0.1mA, V
CE
=-1V
I
C
=-1mA, V
CE
=-1V
I
C
=-10mA, V
CE
=-1V
I
C
=-150mA,V
CE
=-2V*
I
C
=-500mA,V
CE
=-2V*
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.4
-0.75
-0.4
-0.75
V
V
I
C
=-150mA,I
B
=-15mA*
I
C
=-500mA,I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.75
-0.95
-1.3
-0.75
-0.95
-1.3
V
V
I
C
=-150mA,I
B
=-15mA*
I
C
=-500mA,I
B
=-50mA
Transition
Frequency
f
T
150
200
MHz I
C
=-20mA,V
CE
=-10V
f=100MHz
Output Capacitance C
obo
8.5
8.5
pF V
CB
=-10 V,I
E
=0
f=100kHz
Input Capacitance
C
ibo
30
30
pF V
BE
=0.5V
I
C
=0, f=100kHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
FMMT4402
FMMT4403
C
B
E
PAGE NUMBER
FMMT4402
FMMT4403
PAGE NUMBER
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