Shantou Huashan Electronic Devices Co.,Ltd.
NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS
B PUSH-PULL OPERATION.
ABSOLUTE MAXIMUM RATINGST
a
=25
ELECTRICAL CHARACTERISTICST
a
=25
Symbol Characteristics
Min
Typ
Max
Unit
Test
Conditions
I
CBO
I
EBO
H
FE
V
BE
V
CE(sat
V
BE(sat)
BV
CBO
BV
CEO
BV
EBO
f
T
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base- Emitter Voltage
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Current Gain-Bandwidth Product
85
40
40
25
6
100
0.1
0.1
500
1
0.5
1.2
A
A
V
V
V
V
V
V
MHz
V
CB
=35V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
V
CE
=1V, I
C
=10mA
I
C
=800mA, I
B
=80mA
I
C
=800mA,I
B
=80mA
I
C
=100AI
E
=0
I
C
=2mAI
B
=0
I
E
=100AI
C
=0
V
CE
=10V, I
C
=50mA
h
FE
Classification
B
C
D
E
85--160
120--200 160--300 270--500
T
stg
----
Storage Temperature.............................. -55~150
T
j
----
Juncttion Temperature.......................................150
P
C
----
Collector Dissipation.......................................1W
V
CBO
----
Collector-Base Voltage....................................40V
V
CEO
----
Collector-Emitter Voltage.................................25V
V
EBO
----
Emitter-Base Voltage....................................6V
I
C
----
Collector Current.............................................1.5A
1EmitterE
2CollectorC
3BaseB
TO-92
HC8050
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