MIL-PRF-19500/420H

19 April 2004

SUPERSEDING

MIL-PRF-19500/420G

30 December 2002

PERFORMANCE SPECIFICATION SHEET

* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,

TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US,

JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD,

JANHCE, JANKCA, JANKCD, AND JANKCE

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

* 1.1 Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor
diodes. Four levels of product assurance are provided for each encapsulated device type as specified in
MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US
through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die.

1.3 Maximum ratings. Unless otherwise specified, T

= +25

C and ratings apply to all case outlines.

Col. 1

Col. 2

Col. 3

Col. 4

Col. 5

Col. 6

Col. 7

Col. 8

Type

(BR)

RWM

and

(BR)min

= +55

L = .375 inch

(1) (2) (3)

FSM

= 2 A dc

= 1/120 s

= +55

+55

(2) (4)

STG

1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US

200
400
600
800
1,000

V dc

200
400
600
800
1,000

A dc

5
5
5
5
5

A(pk)

100
100
100
100
100

-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200

A dc

3
3
3
3
3

-65 to +175
-65 to +175
-65 to +175
-65 to +175
-65 to +175

(1) Derate linearly at 41.6 mA/

C above T

= +55

C at L = .375 inch (9.53 mm).

(2) An

of up to 6 A dc is allowable provided that appropriate heat sinking or forced air cooling maintains the

maximum junction temperature at or below +200

C as proven by the junction temperature rise test (see 6.5).

Barometric pressure reduced:

1N5550, 1N5551, 1N5552 - 8 mmHg (100,000 feet).

1N5553, 1N5554 - 33 mmHg (70,000 feet).

(3) Does not apply to surface mount devices.

(4) Derate linearly at 25 mA/

C above T

= +55

AMSC N/A

FSC 5961

INCH-POUND

The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 19 July 2004.

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to

Semiconduction@dscc.dla.mil

. Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at

http://www.dodssp.daps.mil

MIL-PRF-19500/420H

1.4 Primary electrical characteristics. Unless otherwise specified, T

= +25

Type

at I

= 9.0 A(pk)

1 percent duty cycle,

8.3 ms max pulse width

at T

= +100

JEC

1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US

Min V(pk)

0.6
0.6
0.6
0.6
0.6

Max V(pk)

1.2
1.2
1.2
1.3
1.3

A dc (max) at V

(V dc)

1.0 200
1.0 400
1.0 600
1.0 800
1.0 1,000

A dc (max) at V

(V dc)

75 200
75 400
75 600
75 800
75 1,000

See (1)

(1) R

C/W for L = .375 inch (9.52 mm).

JEC

C/W for L = 0 (US version).

2. APPLICABLE DOCUMENTS

* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.

2.2 Government documents.

* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.

* DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500 - Semiconductor

Devices, General Specification for.

* DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750

Test Methods for Semiconductor Devices.

* (Copies of these documents are available online at

http://assist.daps.dla.mil/quicksearch/

www.dodssp.dap.mil

or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA
19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited

herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.

MIL-PRF-19500/420H

Ltr

Dimensions

Notes

Inches

Millimeters

Min

Max

Min

Max

.130

.300

3.30

7.62

.115

.180

2.92

4.57

3, 4

.037

.042

0.94

1.07

.900

1.300

22.86

33.02

.050

1.27

NOTES:

Dimensions are in inches.

Millimeters are given for general information only.

Dimensions BL and BD include all components of the diode periphery
except the sections of leads over which the diameter is controlled.

Dimension BD shall be measured at the largest diameter.

Dimension LU shall include the sections of the lead over
which the diameter is uncontrolled. This uncontrolled area
is defined as the zone between the edge of the diode body
and extending .050 inch (1.27 mm) onto the leads.

In accordance with ASME Y14.5M, diameters are
equivalent to

x symbology.

* FIGURE 1. Physical dimensions of diode 1N5550 through 1N5554, (similar to DO-41).

MIL-PRF-19500/420H

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows:.

* EC .........................End

cap.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US through
1N5554US, and figures 3, 4, 5, 6, and 7 (JANHC and JANKC).

3.4.1 Lead finish. Unless otherwise specified, lead or end cap finish shall be solderable in accordance with
MIL-PRF-19500, MIL-STD-750, and herein. When solder alloy is used for finish the maximum lead temperature is
limited to 175

C maximum. Where a choice of finish is desired, it shall be specified in the acquisition document (see

6.2).

3.4.2 Diode construction. These devices shall be constructed utilizing non-cavity double plug construction with
high temperature metallurgical bonding between both sides of the silicon die and terminal pins. Metallurgical bond
shall be in accordance with the requirements of category I in MIL-PRF-19500. US version devices shall be
structurally identical to the non-surface mount devices except for lead terminations.

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.5.1 Marking of US version. For US version only, all marking may be omitted from the device except for the
cathode marking. All marking which is omitted from the body of the device shall appear on the label of the initial
container.

3.5.2 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. Alternately
for surface mount (US) devices, a minimum of three evenly spaced contrasting color dots around the periphery of the
cathode end may be used. No color coding will be permitted.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I
herein.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

MIL-PRF-19500/420H

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.

4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification
only. In case qualification was awarded to a prior revision of the specification sheet that did not request the
performance of table II tests, the tests specified in table II herein shall be performed on the first inspection lot to this
revision to maintain qualification.

4.2.2 JANHC and JANKC die. Qualification shall be in accordance with appendix G of MIL-PRF-19500 and as
specified herein.

* 4.3 Screening (JANS, , JANTXV and JANTX levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 (appendix E), and as specified herein. Specified electrical measurements shall be made in
accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see
table IV of
MIL-PRF-19500)

JANS level

JANTXV and JANTX level

1a
1b

Required
Required

Not required
Required (JANTXV only)

Optional

Not required

3a
3b

(1) 3c

Required
Not applicable
Thermal impedance (see 4.3.1 and 4.4.1)

Not applicable

7a
7b

Not applicable
Optional

8 Required

Not

required

and I

Not applicable

Method 1038 of
MIL-STD-750, condition A

and I

;

0.1 V dc

250 nA dc or 100 percent of initial

value whichever is greater.

and I

Required, see 4.3.2

(2) 13

Subgroups 2 and 3 of table I herein;

100 percent of initial reading or 250

nA dc, whichever is greater.

±.1 V dc change from initial value.

Scope display evaluation (see 4.5.3)

Subgroup 2 of table I herein;

100 percent of initial reading or 250 nA

dc, whichever is greater.

±.1 V dc change from initial value.

Scope display evaluation (see 4.5.3)

14a

(3) 14b

Not applicable
Required

15 Required

Not

required

16 Required

Not

required

(1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in

accordance with MIL-PRF-19500, screen 3 prior to this thermal test.

(2) Z

JX is not required in screen 13, if already previously performed.

(3)

For clear glass diodes, the hermetic seal (gross leak) may be performed at any time after
temperature cycling.

MIL-PRF-19500/420H

* 4.3.1 Thermal impedance Z

measurements for screening. The Z

measurements shall be performed in

accordance with method 3101 of MIL-STD-750. The maximum screen limit shall be developed by the supplier using
statistical methods and it shall not exceed the table I, subgroup 2 herein. See 4.4.1 for test conditions.

4.3.1.1 Thermal impedance (Z

measurements) for initial qualification or requalification. The Z

measurements shall be performed in accordance with method 3101 of MIL-STD-750 (read and record date Z

shall be supplied on one lot (500 pieces minimum and a thermal response curve shall be submitted.) Twenty-

two of these samples shall be serialized and provided to the qualifying activity for correlation prior to shipment of
parts. Measurements conditions shall be in accordance with 4.4.1.

* 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.2, 4.5.2.1) adjust I

to achieve

the required TJ.

4.3.3 Screening (JANHC and JANKC). Screening of die shall be in accordance with appendix G of

MIL-PRF-19500. As a minimum, die shall be 100-percent probed to ensure compliance with table I, subgroup 2.
Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements.

* 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. The following test conditions shall be used for Z

, table I: Z

1.5

C/W.

............................. 1 mA to 10 mA.

.............................. 5 A minimum.

.............................. 10 ms.

........................... 100

s maximum.

........................... 5

s maximum.

MIL-PRF-19500/420H

* 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Electrical measurements (end-points) requirements shall be in accordance with the applicable inspections of table I,
subgroup 2 herein. For delta requirements see table III herein.

* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. For B5, if a failure occurs, resubmission shall
be at the test conditions of the original sample.

Subgroup

Method Condition

B3 1056

C to +100

C, 25 cycles.

B3 1051

-55

C to +175

C, 100 cycles.

B3 4066

FSM

= rated I

FSM

(see col. 5 of 1.3); 10 surges of 8.3 ms each at 1 minute

intervals, superimposed on I

= 0, V

RWM

= 0.

1037

= I

rated minimum (see col. 4 of 1.3)

= rated V

RWM

(see col. 3 of 1.3 and 4.5.5); 2,000 cycles.

1027

= I

rated minimum (see col. 4 of 1.3); apply V

= rated V

RWM

(see col. 3 of 1.3

and 4.5.2) adjust I

to achieve T

minimum; f = 50-60 Hz.

Option 1: T

= + 30

C max. ; T

= 225

C minimum; t = 216 hours; n = 45 c = 0.

Option 2: T

= + 100

C max. ; T

= 275

C minimum; t = 96 hours, n = 22,

c = 0.

* B6

3101

(maximum)

C/W; L = .375 inch (9.53 mm).

For surface mount devices (US version), R

JEC

C/W.

4081

Peak reverse power, see 4.5.5. P

1,000 W. Test shall be performed on

each sublot; sampling plan n = 10, c = 0, electrical end-points, see table I,
subgroup 2 herein.

* 4.4.2.2 Group B inspection, table VIb (JAN, , JANTX and JANTXV of MIL-PRF-19500).

Subgroup

Method Condition

B2 1056

C to +100

C, 10 cycles.

* B2 1051

-55

C to +175

C, 25 cycles.

B3 1027

= 150

C minimum (see 4.5.2.1). Adjust I

to achieve the required T

; apply

= rated

RWM

(see col. 3 of 1.3), f = 50-60 Hz (see 4.5.2).

Not applicable .

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein. See table III herein for delta limits when applicable.

MIL-PRF-19500/420H

* 4.4.3.1 Group C inspection, table VII of MIL-PRF-19500.

Subgroup

Method Condition

C2 1056

C to +100

C, 10 cycles.

C2 1051

-55

C to +175

C, 25 cycles.

2036

Tension: Test condition A; weight = 5 pounds; t = 30 seconds.

Lead fatigue: Test condition E; weight 2 pounds.

NOTE: Both tension and lead fatigue are not applicable for US devices.

* C5 3101

See

4.5.5.

4081

C6 1027

= 150

C minimum (see 4.5.2.1). I

= I

= 3 A dc minimum; adjust I

achieve the required T

; apply V

= rated

RWM

(see col. 3 of 1.3), f = 50-60 Hz

(see 4.5.2.1).

* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-
points) shall be in accordance with table I, subgroup 2 herein. See table III for delta limits when applicable.

4.5 Methods of inspection. Methods of inspection shall be as specified in appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Burn-in and life tests. These tests shall be conducted with a half-sine waveform of the specified peak
voltage impressed across the diode in the reverse direction followed by a half-sine waveform of the specified
average rectified current. The forward conduction angle of the rectified current shall be neither greater than 180
degrees, nor less than 150 degrees.

* 4.5.2.1 Free air burn-in. Deliberate heat sinking, baffles to create an oven, forced air-cooling or heating is
prohibited unless otherwise approved by the qualifying activity. The use of a current limiting or ballast resistor is
permitted provided that each DUT still sees the full P

(minimum) and that the minimum applied voltage, where

applicable, is maintained through out the burn-in period. T

= 135

C minimum for screening and T

= 150

C for 4.4.2

and 4.4.3 life tests. Use method 3100 of MIL-STD-750 to measure T

4.5.3 Scope display evaluation. Scope display evaluation shall be sharp and stable in accordance with method
4023 of MIL-STD-750. Scope display may be performed on ATE (automatic test equipment) for screening only, with
the approval of the qualifying activity. Scope display in table I, subgroup 4 shall be performed on a scope. The
reverse current (I

) over the knee shall be 500

A peak.

MIL-PRF-19500/420H

4.5.4 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test

method 3101 or 4081 of MIL-STD-750. Read and record data in accordance with group E herein and shall be
included in the qualification report. Forced moving air or draft shall not be permitted across the devices during
test. The maximum limit under these test condition shall be R

C/W for L = .375 (9.53 mm);

JEC

C/W for L= 0 (US version). The following conditions shall apply:

a. I

............................. 2 A minimum.

b. t

............................. Thermal

equilibrium.

c. I

............................. 1.0 mA to 10 mA.

d. t

............................. 100

s maximum.

The device shall be allowed to reach equilibrium at current I

before the measurement shall be made (t

25 sec).

LS = Lead spacing = .375 inch (9.53 mm) minimum for leaded devices and LS = 0 minimum for unleaded devices as
defined (see figure 8):

FIGURE 8. Mounting arrangement.

4.5.5 Peak reverse power test. A 20 microsecond half-sine waveform of current shall be used and peak reverse
power shall be determined by the product of peak reverse voltage and peak reverse current. A 20 microsecond
square waveform may also be used with the approval of the qualifying activity (see figure 9).

MIL-PRF-19500/420H

* TABLE I. Group A inspection.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 1

Visual and mechanical
inspection

2071

Subgroup 2

Thermal impedance

3101

See 4.3.1 and 4.4.1.

1.5

C/W

Forward voltage

1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US

4011

= 9.0 A(pk); duty cycle

percent (pulsed see 4.5.1);
t

8.3 ms

0.6
0.6
0.6
0.6
0.6

1.2
1.2
1.2
1.3
1.3

V(pk)
V(pk)
V(pk)
V(pk)
V(pk)

Forward voltage

4011

= 1.5 A dc

0.5

1.0

V dc

Reverse current
leakage

1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US

4016

DC method

V

= 200 V dc

= 400 V dc

= 600 V dc

= 800 V dc

= 1,000 V dc

1.0
1.0
1.0
1.0
1.0

A dc

Breakdown voltage
(diodes)

1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US

4021

= 50

A dc

= 50

A dc

= 50

A dc

= 50

A dc

= 50

A dc

BR1

200
400
600
800
1,000

V dc
V dc
V dc
V dc
V dc

See footnote at end of table.

MIL-PRF-19500/420H

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 3

High temperature
operation:

= +100

Reverse current
leakage

DC method

Reverse current
leakage

1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US

4016

DC method

V

= 200 V dc

= 400 V dc

= 600 V dc

= 800 V dc

= 1,000 V dc

75
75
75
75
75

A dc

Forward voltage

1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US

4011

= 9.0 A(pk); duty cycle

percent (pulsed see 4.5.1); t

8.3 ms

1.2
1.2
1.2
1.3
1.3

V(pk)
V(pk)
V(pk)
V(pk)
V(pk)

Low temperature
operation:

= -55

Forward voltage

4011

= 9.0 A(pk); duty cycle

percent (pulsed); t

8.3 ms

1.5

V(pk)

Forward voltage

4011

= 1.5 A dc

0.5

1.2

V dc

Breakdown voltage
(diodes)

1N5550, 1N5550US
1N5551, 1N5551US
1N5552, 1N5552US
1N5553, 1N5553US
1N5554, 1N5554US

4021

= 50

A dc

= 50

A dc

= 50

A dc

= 50

A dc

= 50

A dc

BR2

200
400
600
800

1,000

V dc
V dc
V dc
V dc
V dc

Subgroup 4

Reverse recovery time

4031

Condition B1

2.0

Scope display evaluation

4023

See 4.5.3, n = 116, c = 0

See footnote at end of table.

MIL-PRF-19500/420H

* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.

Inspection

MIL-STD-750

Sampling

plan

Method

Conditions

Subgroup 1

Thermal shock

1056

20 cycles, condition D except low temperature shall be
achieved using liquid nitrogen (-195

C). Perform a visual for

cracked glass.

45 devices

c = 0

Temperature cycling

Electrical measurements

1051

500 cycles, condition C, -65

C to +175

See table I, subgroup 2 herein.

Subgroup 2

22 devices

c = 0

Steady state dc blocking life

1048

1,000 hours, condition A; V

= V

RWM

Electrical measurements

See table I, subgroup 2 and table III herein.

* Subgroup 3

3 devices

c = 0

DPA (Decap analysis)

2101

Cross section and scribe and break.
Separate samples shall be used for each test.

* Subgroup 4

Thermal impedance
curves

Each supplier shall submit their (typical) maximum design
thermal impedance curves. In addition, optional test
conditions and Z

limit shall be provided to the qualifying

activity in the qualification report.

Junction temperature
rise (see 4.5.2.1)

See figures 10, 11, and 12;

120

C; L = .375 inch;

= 55

C; I

= 5 A dc.

Subgroup 5

22 devices

c = 0

Barometric pressure,
reduced (altitude
operation)

1001

Pressure (see 1.3); t = 1 min. DC method;
V

= V

RWM

(see 1.3); I

= 1.0

A dc maximum

Electrical measurement

See table I, subgroup 2 and table III herein.

* Subgroup 6

ESD

1020

n = 3, c = 0

See footnotes at end of table.

MIL-PRF-19500/420H

* TABLE II. Group E inspection (all quality levels) for qualification and requalification only - Continued.

Inspection

MIL-STD-750

Sampling

plan

Method

Conditions

* Subgroup 8

Peak reverse power

See 4.5.5 herein. Peak reverse power (P

)= shall be

characterized by the supplier and this data shall be available
to the Government. Test shall be performed on each sublot.

Electrical measurement

During the P

test, the voltage (V

) shall be monitored to

verify it has not collapsed. Any collapse in V

during or

after the P

test or rise in leakage current (I

) after the test

that exceeds I

in table I shall be considered a failure to that

level of applied P

. Progressively higher levels of P

shall

be applied until failure occurs on all devices within the
chosen sample size to characterize each sublot.

Subgroup 9 1/

n = 45

Resistance to glass
cracking

1057

Step stress to destruction by increasing cycles or up to a
maximum of 25 cycles.

* Subgroup 10

22 devices

c = 0

Forward surge

4066

FSM

= 80 A(pk); 10 surges of 8.3 ms each at 1 minute

intervals, superimposed on I

= 2 A dc; V

RWM

= rated V

RWM

(see col. 3 of 1.3). T

= +100

Electrical measurement

See table I, subgroup 2 and table III herein.

1/ The sample size for this step stress requirement shall be determined by the supplier. A statistically significant

sample size is required.

MIL-PRF-19500/420H

* TABLE III. Delta requirements. 1/ 2/ 3/ 4/ 5/

Step

Inspection

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Reverse current
leaking change

4016

DC method

±100 percent of
initial value or
±250 nA dc,
whichever is
greater.

Forward voltage
change

4011

= 1.5 A dc;

pulsed (see 4.5.1)

±50 mV dc
maximum
change from
previous
measured value.

1/ The electrical measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 3, see table III herein, step 2.
b. Subgroup 4, see table III herein, step 2.
c.

Subgroup 5, see table III herein, steps 1 and 2.

2/ The electrical measurements for table VIb (JAN, , JANTX and JANTXV) of MIL-PRF-19500 are as follows:

a. Subgroup 3, see table III herein, step 1.
b. Subgroup 6, see table III herein, step 1.

3/ The electrical measurements for table VII of MIL-PRF-19500 are as follows:

a. Subgroup 2, see table III herein, step 1 (JANS).
b. Subgroup 6, see table III herein, step 1 and 2 (JANS), step 1 (JAN, JANTX, JANTXV and).

4/ Devices which exceed the table I limits for this test shall not be accepted.
5/ The electrical measurements for table IX of MIL-PRF-19500 are as follows:

a. Subgroup 2 and 10, see table III herein, step 1 and 2.

MIL-PRF-19500/420H

5. PACKAGING

* 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD or in-house contractor personnel,
these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging
requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or
Defense Agency, or within the Military Service's system commands. Packaging data retrieval is available from the
managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by
contacting the responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.

* 6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of this specification.

b. Packaging requirements (see 5.1).

c. Lead finish (see 3.4.1).

d. Product assurance level and type designator.

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which

are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or
not such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000 or e-mail
vqe.chief@dla.mil.

6.4 Supersession information. Devices covered by this specification supersede the manufacturers' and
users' Part or Identifying Number (PIN). This information in no way implies that the manufacturers' PIN's
are suitable as a substitute for the military PIN.

6.5 Applications data. See figure 13 for maximum power in watts as a function of lead temperature at a
distance "L" from the diode body. Device current capability with lead-dissipators or body forced-air-cooling,
may be determined from figure 14, which shows maximum average rectified current versus lead
temperature as a function of the distance L from the diode body at which lead temperature is measured.

MIL-PRF-19500/420H

6.6 Suppliers of die. The qualified die suppliers with the applicable letter version (example JANHCA1N5550) will
be identified on the QML.

JANC ordering information

Manufacturer

14552 60211 13409 33178 33178

1N5550

1N5551

1N5552

1N5553

1N5554

JANHCA1N5550
JANKCA1N5550
JANHCA1N5551
JANKCA1N5551
JANHCA1N5552
JANKCA1N5552
JANHCA1N5553
JANKCA1N5553
JANHCA1N5554
JANKCA1N5554

JANHCB1N5550

JANHCB1N5551

JANHCB1N5552

JANHCB1N5553

JANHCB1N5554

JANHCC1N5550

JANHCC1N5551

JANHCC1N5552

JANHCC1N5553

JANHCC1N5554

JANHCD1N5550

JANHCD1N5551

JANHCD1N5552

JANHCD1N5553

JANHCD1N5554

JANHCE1N5550

JANHCE1N5551

JANHCE1N5552

JANHCE1N5553

JANHCE1N5554

6.7 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.

Custodians:

Preparing activity:

Army - CR

DLA - CC

Navy - EC
Air Force - 11
DLA - CC

Review activities:

(Project 5961-2760)

Army - AR, MI, SM
Navy - AS, MC
Air Force - 19, 71, 84, 99

* NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at http:\\

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