1000
100
200
400
600
800
100
200
400
600
800
1000
70
140
280
420
560
700
10
30
170
1.0
10
500
40
SIYU
R
V
A
pF
I
R
Cj
I
F
= 3.0A
TA= 25
V
R
=
4.0V, f = 1MHz
TA = 25
Electrical Characteristics
Ratings at 25 ambient temperature unless otherwise specified.
Unit
Symbols
TA=100
Maximum forward voltage
Maximum reverse current
Type junction capacitance
V
F
-50 --- +150
V
V
V
A
A
A
/W
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R(AV)
TA = 25
Maximum Ratings & Thermal Characteristics
Ratings at 25 ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
8.3ms
Peak forward surge current 8.3 ms single half sine-wave
Maximum
peak
reverse current full cycle
Typical thermal resistance
Symbols
Unit
Operating junction and storage temperature range
Tj, TSTG
@TA = 75
R
JA
50---1000V
6.0 A
Features
Low reverse leakage
High forward surge capability
Mechanical Data
: Case: Molded Plastic
: Polarity: Symbols molded or marked on body
: Mounting Position: Any
Single-phase Silicon Bridge Rectifier
Reverse Voltage 50 to 1000 V
Forward Current 6.0 A
+
~
~
-
.995(25.3)
.983(24.7)
.134(3.4)
.122(3.1)
.057(1.45)
.041(1.05)
.083(2.1)
.069(1.7)
.043(1.1)
.035(0.9)
.303(7.7)
.287(7.3)
.303(7.7)
.287(7.3)
.
074(
1.
9
)
.
059(
1.
5
)
.
146
(3
.
7
)
.
130
(3
.
3
)
.303(7.7)
.287(7.3)
.
7
0
8
(
1
8.
0)
.
6
6
9
(
1
7.
0)
.15
7
(4
.0)
.
6
02(
1
5.
3)
.
578(
14.
7)
Unitinchmm
.031(0.8)
.023(0.6)
.114(2.8)
.098(2.5)
.150(3.8)
.134(3.4)
.150(3.8)
.134(3.4)
.189(4.8)
.173(4.4)
.
3
82(9
.
7)
.3
6
6
(
9
.
3
)
.1
3
4
(
8
.4
)
.
122
(
3
.
1
)
: 4.6 Weight:4.6 Grams
170 A S
urge overload rating:170 Amperes peak
KBJ601 KBJ602 KBJ603 KBJ604 KBJ606 KBJ608 KBJ610
GBJ601 GBJ602 GBJ603 GBJ604 GBJ606 GBJ608 GBJ610
KBJ601 ...... KBJ610
KBJ601 KBJ602 KBJ603 KBJ604 KBJ606 KBJ608 KBJ610
GBJ601 GBJ602 GBJ603 GBJ604 GBJ606 GBJ608 GBJ610
6.0
T
C
=111
Ta=25
2.8
300
300
210
- 125 -
DACHANG ELECTRONICS
SIYU
R
KBJ601...... KBJ610
Characteristic Curves
V
F
Instantaneous Forward Voltage (V)
I
F
(A
)
I
F(AV
)
(A)
I
F
Inst
antan
e
ous F
o
r
w
ar
d C
u
r
r
ent
(A
)
I
F(
A
)
A
ver
age F
o
r
w
ar
d R
ectified
C
u
r
r
ent (
A
)
0
40
80
120
160
0
2.0
4.0
1.0
3.0
+
~
~
-
P.C.B.
on glass-epoxi substrate
soldering land 5mm
sine wave R-load
free in air
I
FS
M
(A)
MAXIMUM NON REPETITIVE
PEAK FORWARD SURGE CURRENT
Number of Cycles at 60 Hz.
I
FS
M
P
e
a
k
F
o
rw
a
r
d
S
u
rg
e
C
u
rre
n
t
(A)
FORWARD POWER DISSIPATION
FO
R
W
AR
D P
O
W
E
R
DI
SS
IP
A
T
I
O
N
P
F
(W))
P(W
)
10
100
0
2
5
20
50
0
200
240
0
2
4
6
10
12
5
0
Sine wave
Tj=150
1
2
6
3
4
8
14
7
FORWARD CURRENT DERATING CURVE
I
F(AV
)
(A)
I
F(
A
)
A
ver
age F
o
r
w
ar
d R
ectified
C
u
r
r
ent (
A
)
0
40
80
120
160
0
5
9
2
7
+
~
~
-
Tc-sensing point
sine wave R-load
with heatsink
Tc
160
120
80
40
1
6
4
8
3
10
0.1
0.4
0.5
0.7
0.8
0.9
1.2
1
10
1.1
0.6
1.0
Pulse measurement
per diode
Tl=150
Tl=25
I
FS
M
10mS
10mS
1 Cycle
non-repetitive
Tj=25 before
V
F
(V)
T
C
(
C)
Case Temperature Tc()
I
0
(A)
AVERAGE RECGIFIED FORWARD
CURRENT I
o
(A)
Ta(
C)
Tamb, ambient temperature (C)
FORWARD CURRENT DERATING CURVE
TYPICAL FORWARD CHARACTERISTIC
DACHANG ELECTRONICS - 126 -
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