NA82 is an 8-input NAND gate with 2x drive strength.
Truth Table
Q
C
D
E
F
B
G
A
H
Capacitance
A
B
C
D
E
F
G
H
Q
Ci (pF)
L
X
X
X
X
X
X
X
H
A
0.035
X
L
X
X
X
X
X
X
H
B
0.023
X
X
L
X
X
X
X
X
H
C
0.020
X
X
X
L
X
X
X
X
H
D
0.023
X
X
X
X
L
X
X
X
H
E
0.032
X
X
X
X
X
L
X
X
H
F
0.023
X
X
X
X
X
X
L
X
H
G
0.021
X
X
X
X
X
X
X
L
H
H
0.022
H
H
H
H
H
H
H
H
L
Area
Power
1.35 mils
2
4.38 W
/
MHz
Delay [ns] = tpd.. = f(SL, L)
with SL = Input Slope [ns] ; L = Output Load [pF]
Output Slope [ns] = op_sl.. = f(L)
with L = Output Load [pF]
AC Characteristics : Tj = 25C VDD = 3.3V Typical Process
AC Characteristics
Characteristics
Symbol
SL = 0.1
SL = 2.0
L = 0.2
L = 1.4
L = 2.0
L = 0.2
L = 1.4
L = 2.0
Delay A to Q
tpdar
1.17
2.59
3.33
1.54
2.97
3.61
tpdaf
1.05
2.23
2.85
0.98
2.18
2.73
Delay B to Q
tpdbr
1.10
2.54
3.18
1.48
2.89
3.57
tpdbf
1.07
2.25
2.86
1.08
2.26
2.88
Delay C to Q
tpdcr
1.06
2.47
3.13
1.42
2.83
3.56
tpdcf
1.01
2.20
2.80
1.07
2.24
2.85
Delay D to Q
tpddr
0.98
2.35
3.08
1.33
2.73
3.49
tpddf
0.96
2.16
2.74
1.08
2.27
2.87
Delay E to Q
tpder
1.12
2.55
3.21
1.49
2.90
3.64
tpdef
1.05
2.25
2.83
1.00
2.22
2.76
Delay F to Q
tpdfr
1.08
2.48
3.24
1.45
2.86
3.57
tpdff
1.05
2.24
2.83
1.06
2.26
2.81
Delay G to Q
tpdgr
1.03
2.44
3.12
1.38
2.78
3.51
tpdgf
1.02
2.22
2.77
1.08
2.27
2.83
Delay H to Q
tpdhr
0.97
2.36
3.01
1.30
2.74
3.35
tpdhf
0.97
2.15
2.72
1.09
2.28
2.83
Sept. 1996
- 248 -
Rev. N/C
Austria Mikro S ysteme International
R
0.6 m CMOS
CUB
NA82
NA82
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