205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, w ww.omnirel.com
12/8/98
Rev. 03
1
ELECTRICAL CHARACTERISTICS: OM300L60CMA (Tc= 25
C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, V
CE
=0V
V
CES
600
V
Zero Gate Voltage Drain Current, V
GE
=0, V
CE
=600V
I
CES
25
A
Gate Emitter Leakage Current, V
GE
=+/-15V, V
CE
=0V
I
GES
2
A
ON CHARACTERISTICS
Gate Threshold Voltage, V
CE
=V
GE,
I
C
=6mA
V
GE(TH)
4.5
6.5
V
Collector Emitter Saturation Voltage, V
GE
=15V, IC=300A
V
CE(SAT)
2.4
2.7
V
DYNAMIC CHARACTERISTICS
Fwd. Transconductance
V
CE
=5V, I
C
=300A
gfs
42
S
Input Capacitance
V
GE
=0
Cies
14000
pF
Output Capacitance
V
CE
=25V
Coes
9500
pF
Rev. Transfer Capacitance
f=1.0MHz
Cres
1120
pF
SWITCHING INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
t(on)
800 1600
nS
Rise Time
V
CC
= 300V, I
C
=300A
tr
400
800
nS
Turn-on Losses
Eon
mJ
V
GE
=+15/-10V, R
G
=6.8
Turn-off Delay Time
L=100
H,Tj=125
C
td(off)
800 1200
nS
Fall Time
tf
350
800
nS
Turn-off Losses
Eoff
mJ
DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
=300A, Tj=25
C
V
F
1.5
2.0
V
Tj=125
C
V
R
=300V, Tj=25
C
Qrr
8
C
Reverse Recovery
I
F
=300A, Tj=125
C
20
Characteristics
dI/dt=-1500A/
S Tj=25
C
Irr
50
A
Tj=125
C
80
Tj=25
C
trr
160
nS
Tj=125
C
220
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case (Per IGBT)
R
thJC
0.11
C/W
Thermal Resistance, Junction to Case (Per Diode)
R
thJC
0.14
C/W
Maximum Junction Temperature
T
jMAX
150
C
Isolation Voltage
Vis
RMS
2500
V
Screw Torque Mounting
-
15
20
in-lb
Screw Torque (M6) Terminals
-
10
12
in-lb
Screw Torque (M3) Terminals
-
6
8
in-lb
Module Weight
-
400 Grams
205 Crawford St. Leominster, MA 01453 (978)534-5776 Fax(978)537-4246, w ww.omnirel.com
12/8/98
Rev. 03
2
OM300L60CMA
IGBT Collector current vs. Collector-emitter voltage
Tj=25C
0
100
200
300
400
500
0
1
2
3
4
5
6
VCE (V)
IC (A)
Vge = 11V
Vge = 15V
Vge = 9V
Vge = 13V
Vge = 7V
IGBT Collector Current vs. Collector-emitter Voltage
Tj=-55C
0
100
200
300
400
500
0
1
2
3
4
5
6
VCE (V)
IC (A)
Vge = 11V
Vge = 15V
Vge = 9V
Vge = 13V
Vge = 7V
IGBT Collector Current vs. Collector-emitter voltage
Tj=125C
0
100
200
300
400
500
0
1
2
3
4
5
6
Vce(V)
Ic(A)
Vge = 15V
Vge = 13V
Vge = 11V
Vge = 9V
Vge =7V
Diode Forward Current vs. Forward voltage
Vge =0V
0
100
200
300
400
500
0
0.5
1
1.5
2
2.5
3
Vf (V)
If (A)
Tj=125C
Tj=-55C
Tj=25C
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