ChipFind - документация

Электронный компонент: OMS410A

Скачать:  PDF   ZIP
2.1 - 53
2.1
Three Phase, 100 Volt, 15 To 45 Amp Bridge
With Current And Temperature Sensing
In A Low Profile Package
4 11 R0
3 PHASE, LOW VOLTAGE, LOW R
DS(on)
, MOSFET
BRIDGE CIRCUIT IN A PLASTIC PACKAGE
FEATURES
Three Phase Power Switch Configuration
Zener Gate Protection
10 Miliohm Shunt Resistor
Linear Thermal Sensor
Isolated Low Profile Package
Output Currents Up To 45 Amps
DESCRIPTION
This series of MOSFET switches is configured in a 3 phase bridge with a common
V
DD
line, precision series shunt resistor in the source line, and a sensing element to
monitor the substrate temperature. This device is ideally suited for Motor Control
applications where size, performance, and efficiency are key.
MAXIMUM RATINGS
(@ 25C)
Part
V
DS
R
DS(on)
I
D
Package
Number
(Volts)
(m )
(Amps)
OMS410
100
85
15
MP-3
OMS410A
100
85
20
MP-3
OMS510
100
42
45
MP-3
SCHEMATIC
OMS410A
OMS410
OMS510
2
1
6
5
10
9
3 4
7 8
1112
13
14
15, 16, 17
18, 19, 20
32, 33, 34
29, 30, 31
26, 27, 28
23, 24, 25
21
22
2.1 - 54
OMS410, OMS410A, OMS510
2.1
ELECTRICAL CHARACTERISTICS: OMS410
(T
C
= 25 unless otherwise specified)
Characteristic
Test Conditions
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 A, V
GS
= 0
V
BRDSS
100
-
-
V
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
I
DSS
-
-
10
A
V
DS
= Max. Rat. x 0.8, T
C
= 70C
-
-
100
A
Gate-Body Leakage, V
GS
= 12 V
I
GSS
-
-
500
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 A
V
GSth
2.0
-
4.0
V
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 9.0 A
R
DSon
-
-
0.058
Static Drain-Source On-Resistance
T
C
= 70C
-
-
0.1
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10
I
Don
15
-
-
A
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 9.0 A,
g
fs
9.0
-
-
mho
Input Capacitance
V
DS
= 25 V,
C
iss
-
-
2600
pF
Output Capacitance
V
GS
= 0,
C
oss
-
-
910
pF
Reverse Transfer Capacitance
f = 1.0 mHz
C
rss
-
-
350
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
don
-
-
35
ns
Rise Time
V
DD
= 100 V, I
D
=
15 A,
t
r
-
-
290
ns
Turn-Off Delay Time
R
GS
= 10 , V
GS
= 10 V
t
doff
-
-
85
ns
Fall Time
t
f
-
-
120
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
I
SD
-
-
14
A
Source - Drain Current (Pulsed)
I
SDM
*
-
-
56
A
Forward On-Voltage
I
SD
= 28 A, V
GS
= 0,
V
SD
-
-
2.5
V
Reverse Recovery Time
I
SD
= 13 A, di/dt = 100 A/Sec
t
rr
-
133
-
ns
Reverse Recovered Charge
Q
rr
-
0.85
-
C
RESISTOR CHARACTERISTICS
Resistor Tolerance
R
S
9.0
10
11
m
Temperature Coefficient, -40C to +70C
T
cr
-
100
-
ppm
* Indicates Pulse Test 300 sec, Duty Cycle 1.5%
ABSOLUTE MAXIMUM RATINGS (T
C
= 25C unless otherwise noted)
Parameter
OMS410
OMS410A
OMS510
Units
V
DS
Drain-Source Voltage
100
100
100
V
V
DGR
Drain-Gate Voltage (R
GS
= 1 m )
100
100
100
V
I
D
@ T
C
= 25C
Continuous Drain Current
15
20
45
A
I
D
@ T
C
= 70C
Continuous Drain Current
11
16
45
A
I
DM
Pulsed Drain Current
1
110
110
180
A
P
D
@ T
C
= 25C
Maximum Power Dissipation
2
33
33
66
W
P
D
@ T
C
= 70C
Maximum Power Dissipation
2
18
18
36
W
Junction-To-Case Linear Derating Factor
0.33
0.33
0.66
W/C
Thermal Resistance Junction-To-Case
3.0
3.0
1.5
C/W
Sense Resistor
0.010
0.010
0.010
Ohms
Note 1: Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%.
Note 2: Maximum Junction Temperature equal to 125C.
2.1 - 55
OMS410, OMS410A, OMS510
2.1
ELECTRICAL CHARACTERISTICS: OMS520
(T
C
= 25 unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 A, V
GS
= 0
V
(BRDSS
100
-
-
V
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
I
DSS
-
-
10
A
V
DS
= Max. Rat. x 0.8, T
C
= 70C
-
-
100
A
Gate-Body Leakage, V
GS
= 12 V
I
GSS
-
-
500
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 A
V
GS(th)
2.0
-
4.0
V
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 10 A
R
DS(on)
-
-
0.058
Static Drain-Source On-Resistance
T
C
= 70C
-
-
0.100
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10
I
D(on)
20
-
-
A
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 10 A
g
fs
9.0
-
-
mho
Input Capacitance
V
DS
= 25 V,
C
iss
-
-
2600
pF
Output Capacitance
V
GS
= 0,
C
oss
-
-
910
pF
Reverse Transfer Capacitance
f = 1.0 mHz
C
rss
-
-
350
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-
-
35
ns
Rise Time
V
DD
= 100 V, I
D
=
20 A,
t
r
-
-
290
ns
Turn-Off Delay Time
R
GS
= 10 , V
GS
= 10 V
t
d(off)
-
-
85
ns
Fall Time
t
f
-
-
120
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
I
SD
-
-
20
A
Source - Drain Current (Pulsed)
I
SD
= 28 A, V
GS
= 0,
I
SDM
*
-
-
56
A
Forward On-Voltage
I
SD
= 20 A,
V
SD
-
-
2.5
V
Reverse Recovery Time
di/dt = 100 A/Sec
t
rr
-
133
-
ns
Reverse Recovered Charge
Q
rr
-
0.85
-
C
RESISTOR CHARACTERISTICS
Resistor Tolerance
R
S
9.0
10
11
m
Temperature Coefficient, -40C to +70C
T
cr
-
100
-
ppm
* Indicates Pulse Test 300 sec, Duty Cycle 1.5%.
OMS410, OMS410A, OMS510
2.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
.360
.180
.020
.360 MAX.
2.000
1.350
.150
(4) PLCS.
4.000
3.000
.150
.500
.500
.250
.250
.600
.325
.050
(34) PLCS.
.300
2.450
.
135
Pin 1: Gate Q1
Pin 2: Source Q1
Pin 3: Gate Q2
Pin 4: Source Q2
Pin 5: Gate Q3
Pin 6: Source Q3
Pin 7: Gate Q4
Pin 8: Source Q4
Pin 9: Gate Q5
Pin 10: Source Q5
Pin 11: Gate Q6
Pin 12: Source Q6
Pin 13: +Sense Res.
Pin 14: -Sense Res.
Pin 15: Power GND
Pin 16: Power GND
Pin 17: Power GND
Pin 34: V
DD
Pin 33: V
DD
Pin 32: V
DD
Pin 31: Output Phase A
Pin 30: Output Phase A
Pin 29: Output Phase A
Pin 28: Output Phase B
Pin 17: Output Phase B
Pin 26: Output Phase B
Pin 25: Output Phase C
Pin 24: Output Phase C
Pin 23: Output Phase C
Pin 22: +PTC
Pin 21: -PTC
Pin 20: Power GND
Pin 19: Power GND
Pin 18: Power GND
Mechanical Outline
1
Notes: Contact factory for lead bending options.
Mounting Recommendations: Maximum Mounting Torque: 3.0 mN.
The module must be attached to a flat heat sink (flatness 100
m
m maximum).
ELECTRICAL CHARACTERISTICS: OMS510
(T
C
= 25 unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, I
D
= 250 A, V
GS
= 0
V
(BRDSS
100
-
-
V
Zero Gate Voltage Drain Current = V
GS
, V
DS
= Max. Rat.
I
DSS
-
-
20
A
V
DS
= Max. Rat. x 0.8, T
C
= 70C
-
-
200
A
Gate-Body Leakage, V
GS
= 12 V
I
GSS
-
-
500
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
DS
= V
GS
, I
D
= 250 A
V
GS(th)
2.0
-
4.0
V
Static Drain-Source On-Resistance, V
GS
= 10 Vdc, I
D
= 22.5 A
R
DS(on)
-
-
0.029
Static Drain-Source On-Resistance
T
C
= 70C
-
-
0.050
On State Drain Current, V
DS
> I
D(on)
X R
DS(on)
Max., V
GS
= 10
I
D(on)
45
-
-
A
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
DS
> I
D(on)
X R
DS(on)
Max., I
D
= 40 A
g
fs
18
-
-
mho
Input Capacitance
V
DS
= 100 V,
C
iss
-
-
5200
pF
Output Capacitance
V
GS
= 0,
C
oss
-
-
1820
pF
Reverse Transfer Capacitance
f = 1.0 mHz
C
rss
-
-
700
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
-
-
70
ns
Rise Time
V
DD
= 100 V, I
D
=
45 A,
t
r
-
-
580
ns
Turn-Off Delay Time
R
GS
= 10 , V
GS
= 10 V,
t
d(off)
-
-
170
ns
Fall Time
t
f
-
-
240
ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current
I
SD
-
-
45
A
Source - Drain Current (Pulsed)
I
SDM
*
-
-
120
A
Forward On-Voltage
I
SD
= 45 A, V
GS
= 0,
V
SD
-
-
2.5
V
Reverse Recovery Time
I
SD
= 45 A,
t
rr
-
240
-
ns
Reverse Recovered Charge
di/dt = 100 A/Sec
Q
rr
-
1.605
-
C
RESISTOR CHARACTERISTICS
Resistor Tolerance
R
S
9.0
10
11
m
Temperature Coefficient, -40C to +70C
T
cr
-
100
-
ppm
* Indicates Pulse Test 300 sec, Duty Cycle 1.5%.