1
Mar-07-2005
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BI
TO-251
Lead-Free
NIKO-SEM
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Gate-Source Voltage
V
GS
20
V
T
C
= 25 C
50
Continuous Drain Current
T
C
= 100 C
I
D
35
Pulsed Drain Current
1
I
DM
200
Avalanche Current
I
AR
40
A
Avalanche Energy
L = 0.1mH
E
AS
250
Repetitive Avalanche Energy
2
L = 0.05mH
E
AR
8.6
mJ
T
C
= 25 C
50
Power Dissipation
T
C
= 100 C
P
D
30
W
Operating Junction & Storage Temperature Range
T
j
, T
stg
-55 to 150
Lead Temperature (
1
/
16
" from case for 10 sec.)
T
L
275
C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Junction-to-Case
R
JC
2.5
Junction-to-Ambient
R
JA
62.5
Case-to-Heatsink
R
CS
0.6
C / W
1
Pulse width limited by maximum junction temperature.
2
Duty cycle
1
ELECTRICAL CHARACTERISTICS (T
C
= 25 C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
UNIT
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= 250
A
25
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
1
1.6
3
V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= 20V
250
nA
V
DS
= 20V, V
GS
= 0V
25
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20V, V
GS
= 0V, T
C
= 125 C
250
A
1. GATE
2. DRAIN
3. SOURCE
PRODUCT SUMMARY
V
(BR)DSS
R
DS(ON)
I
D
25
9.5m
50A
G
D
S
1
2
3
2
Mar-07-2005
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BI
TO-251
Lead-Free
NIKO-SEM
On-State Drain Current
1
I
D(ON)
V
DS
= 10V, V
GS
= 10V
50
A
V
GS
= 4.5V, I
D
= 20A
11
16
Drain-Source On-State Resistance
1
R
DS(ON)
V
GS
= 10V, I
D
= 25A
7.5
9.5
m
Forward Transconductance
1
g
fs
V
DS
= 10V, I
D
= 25A
32
S
DYNAMIC
Input Capacitance
C
iss
1200 1800
Output Capacitance
C
oss
600 1000
Reverse Transfer Capacitance
C
rss
V
GS
= 0V, V
DS
= 15V, f = 1MHz
350
500
pF
Total Gate Charge
2
Q
g
25
50
Gate-Source Charge
2
Q
gs
15
Gate-Drain Charge
2
Q
gd
V
DS
= 10V, V
GS
= 10V,
I
D
= 25A
10
nC
Turn-On Delay Time
2
t
d(on)
6
16
Rise Time
2
t
r
V
DS
= 15V, R
L
= 1
120
250
Turn-Off Delay Time
2
t
d(off)
I
D
50A, V
GS
= 10V, R
GEN
= 24
40
90
Fall Time
2
t
f
105
200
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 C)
Continuous Current
I
S
50
Pulsed Current
3
I
SM
150
A
Forward Voltage
1
V
SD
I
S
= 25A, V
GS
= 0V
0.9
1.3
V
Reverse Recovery Time
t
rr
70
nS
Peak Reverse Recovery Current
I
RM(REC)
I
F
= I
S
, dl
F
/dt = 100A /
S
200
A
Reverse Recovery Charge
Q
rr
0.043
C
1
Pulse test : Pulse Width
300
sec, Duty Cycle
2
.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH "P0903BI", DATE CODE or LOT #
5
Mar-07-2005
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BI
TO-251
Lead-Free
NIKO-SEM
TO-251 (IPAK) MECHANICAL DATA
mm
mm
Dimension
Min.
Typ.
Max.
Dimension
Min.
Typ.
Max.
A
13.7
15.3
H
1.4
2
B
2.2
2.4
I
6.4
6.8
C
0.4
0.6
J
5.2
5.5
D
0.4
0.6
K
0.6
0.9
E
0.9
1.5
L
0.4
0.8
F
7.0
8.0
M
2.3
G
5.4
5.8
N
G
A
H
J
I
B
C
M
L
D
E
3
2
1
F
K
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