www.docs.chipfind.ru
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
1
Product Description
EDS-102012 Rev F
Phone: (800) SMI-MMIC
http://www.sirenza.com
522 Almanor Ave., Sunnyvale, CA 94085
SPA-2118
850 MHz 1 Watt Power Amplifier
with Active Bias
Product Features
High Linearity Performance:
+20.7 dBm IS-95 CDMA Channel Power
at -55 dBc ACP
+47 dBm typ. OIP3
On-chip Active Bias Control
High Gain: 33 dB Typ.
Patented High Reliability GaAsHBT Technology
Surface-Mountable Plastic Package
Applications
IS-95 CDMA Systems
Multi-Carrier Applications
AMPS, ISM Applications
Sirenza Microdevices' SPA-2118 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 850 MHz band.
Its high linearity makes it an ideal choice for multi-carrier and
digital applications.
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2
EDS-102012 Rev F
Phone: (800) SMI-MMIC
http://www.sirenza.com
522 Almanor Ave., Sunnyvale, CA 94085
Preliminary
SPA-2118 850 MHz 1 Watt Power Amp.
IS-95 CDMA at 880 MHz
Channel Output Power (dBm)
dBc
850-950 MHz Application Circuit Data
, Icc=400mA, Vcc=5V, IS-95, 9 Channels Forward
880 MHz Adjacent Channel Power vs. Channel Output Power
+24 dBm
+20 dBm
+16 dBm
+10 dBm
-85.0
-80.0
-75.0
-70.0
-65.0
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-55.0
-50.0
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11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
-40C
25C
85C
T=+25C
dBm
3
EDS-102012 Rev F
Phone: (800) SMI-MMIC
http://www.sirenza.com
522 Almanor Ave., Sunnyvale, CA 94085
Preliminary
SPA-2118 850 MHz 1 Watt Power Amp.
26
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850-950 MHz Application Circuit Data, I
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4
EDS-102012 Rev F
Phone: (800) SMI-MMIC
http://www.sirenza.com
522 Almanor Ave., Sunnyvale, CA 94085
Preliminary
SPA-2118 850 MHz 1 Watt Power Amp.
850 - 950 MHz Schematic
850 - 950 MHz Evaluation Board Layout
Vcc
6.8pF
33 nH
39pF
10uF Tantalum
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ECB-101161 Rev. C
SOIC-8 PA
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2012
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Sirenza Microdevices
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EDS-102012 Rev F
Phone: (800) SMI-MMIC
http://www.sirenza.com
522 Almanor Ave., Sunnyvale, CA 94085
Preliminary
SPA-2118 850 MHz 1 Watt Power Amp.
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ACTIVE BIAS
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ACTIVE BIAS
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Simplified Device Schematic
Caution: ESD sensitive
Appropriate precautions in handling, packag-
ing and testing devices must be observed.
Absolute Maximum Ratings
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