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Электронный компонент: SPP1413A

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2005/10/31
Ver.2
Page 1
SPP1413A
P-Channel Enhancement Mode MOSFET
DESCRIPTION
APPLICATIONS
The SPP1413A is the P-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching , and low in-line
power loss are needed in a very small outline surface
mount package.
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
PIN CONFIGURATION ( SOT-353 ; SC-70 )
PART MARKING
-20V/-3.4A,R
DS(ON)
= 130m@V
GS
=-4.5V
-20V/-2.4A,R
DS(ON)
= 150m@V
GS
=-2.5V
-20V/-1.7A,R
DS(ON)
= 190m@V
GS
=-1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-353 ( SC70 ) package design
2005/10/31
Ver.2
Page 2
SPP1413A
P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin Symbol
Description
2 G Gate
3 S
Source
1 , 4 , 5
D
Drain



ORDERING INFORMATION
Part Number
Package
Part Marking
SPP1413AS35RG SOT-353
1AYW
Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
SPP1413AS35RG : Tape Reel ; Pb Free




ABSOULTE MAXIMUM RATINGS
(T
A
=25 Unless otherwise noted)
Parameter Symbol
Typical
Unit
Drain-Source Voltage
V
DSS
-20
V
Gate Source Voltage
V
GSS
12
V
T
A
=25
-2.3
Continuous Drain Current(T
J
=150 )
T
A
=70
I
D
-1.7
A
Pulsed Drain Current
I
DM
-6 A
Continuous Source Current(Diode Conduction)
I
S
-1.4 A
T
A
=25
0.95
Power Dissipation
T
A
=70
P
D
0..51
W
Operating Junction Temperature
T
J
-55/150
Storage Temperature Range
T
STG
-55/150
Thermal Resistance-Junction to Ambient
R
JA
105
/W
2005/10/31
Ver.2
Page 3
SPP1413A
P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25 Unl
ess otherwise noted)
Parameter Symbol
Conditions
Min.
Typ
Max.
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
=0V,I
D
=-250uA -20
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=-250uA -0.35 -0.8
V
Gate Leakage Current
I
GSS
V
DS
=0V,V
GS
=12V
100
nA
V
DS
=-20V,V
GS
=0V
-1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=-20V,V
GS
=0V
T
J
=55
-5
uA
On-State Drain Current
I
D(on)
V
DS
-5V,V
GS
=-4.5V
-6 A
V
GS
=-4.5V,I
D
=-3.4A
0.110
0.130
V
GS
=-2.5V,I
D
=-2.4A
0.130
0.150
Drain-Source On-Resistance
R
DS(on)
V
GS
=-1.8V,I
D
=-1.7A
0.170
0.190
Forward Transconductance
gfs
V
DS
=-5V,I
D
=-2.8A
6
S
Diode Forward Voltage
V
SD
I
S
=-1.5A,V
GS
=0V
-0.8
-1.2
V
Dynamic
Total Gate Charge
Q
g
4.8
8
Gate-Source Charge
Q
gs
1.0
Gate-Drain Charge
Q
gd
V
DS
=-6V,V
GS
=-4.5V
I
D
-2.8A
1.0
nC
Input Capacitance
C
iss
485
Output Capacitance
C
oss
85
Reverse Transfer Capacitance
C
rss
V
DS
=-6V,V
GS
=0V
f=1MHz
40
pF
t
d(on)
10
16
Turn-On Time
t
r
13
23
t
d(off)
18
25
Turn-Off Time
t
f
V
DD
=-6V,R
L
=6
I
D
-1.0A,V
GEN
=-4.5V
R
G
=6
15 20
ns







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SPP1413A
P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS














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P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS














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P-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS












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Ver.2
Page 7
SPP1413A
P-Channel Enhancement Mode MOSFET
SOT-353 PACKAGE OUTLINE

2005/10/31
Ver.2
Page 8
SPP1413A
P-Channel Enhancement Mode MOSFET


































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SYNC Power Corporation
9F-5, No.3-2, Park Street
NanKang District (NKSP), Taipei, Taiwan 115
Phone: 886-2-2655-8178
Fax: 886-2-2655-8468
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