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SSM4
532M
COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement N-ch BV
DSS
+30V
Low on-resistance R
DS(ON)
50m
Fast switching I
D
+5A
P-
ch BV
DSS
-30V
R
DS(ON)
7
0m
Description
I
D
-4A
Absolute Maximum Ratings
Symbol Parameter
Rating Units
N-channel
P-channel
V
DS
Drain-Source Voltage
+30 -30 V
V
GS
Gate-Source Voltag
20 20
V
I
D
@
T
A
=25
C Continuous Drain Current
3
+5 -4 A
I
D
@
T
A
=70
C Continuous Drain Current
3
+4 -3.2 A
I
DM
Pulsed Drain Current
1,4
+20 -20 A
P
D
@
T
A
=25
C Total Power Dissipation
2.0 W
Linear Derating Factor
0.016
W/C
T
STG
Storage Temperature Range
-55 to 150
C
T
J
Operating Junction Temperature Range
-55 to 150
C
Symbol Value Unit
Rthj-amb Thermal Resistance Junction-ambient Max. 62.5
C/W
Parameter
Thermal Data
MOSFETs from
Silicon Standard Corp. provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is
widely preferred for commercial and
industrial surface mount applications and
is well suited for
low-voltage applications such as DC/DC converters.
G2
D2
S2
G1
D1
S1
S1
G1
S2
G2
D1
D1
D2
D2
SO-8
Rev.2.01 7/01/2004
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2 of 11
SSM4532M
N-ch
annel Electrical Characteristics @ T
j
=25
o
C
(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250uA 30 - - V
BV
DSS
/
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
C, I
D
=1mA -
0.037
-
V/C
R
DS(ON)
Static Drain-Source On-Resistance V
GS
=10V, I
D
=5A - - 50
m
V
GS
=4.5V, I
D
=4.2A - - 70
m
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
, I
D
=250uA 1 - 3 V
g
fs
Forward Transconductance V
DS
=10V, I
D
=5A - 8 - S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V - - 1 uA
Drain-Source Leakage Current (T
j
=55
o
C)
V
DS
=24V, V
GS
=0V - - 25 uA
I
GSS
Gate-Source Leakage V
GS
=20V - - nA
Q
g
Total Gate Charge
2
I
D
=5A - 10.2 20 nC
Q
gs
Gate-Source Charge V
DS
=10V - 1.2 - nC
Q
gd
Gate-Drain ("Miller") Charge V
GS
=10V - 3.4 - nC
t
d(on)
Turn-on Delay Time
2
V
DS
=10V - 6 12 ns
t
r
Rise Time I
D
=1A - 9 18 ns
t
d(off)
Turn-off Delay Time R
G
=6
,V
GS
=10V - 15 30 ns
t
f
Fall Time R
D
=10
- 5.5 12 ns
C
iss
Input Capacitance V
GS
=0V - 240 360 pF
C
oss
Output Capacitance V
DS
=25V - 145 210 pF
C
rss
Reverse Transfer Capacitance f=1.0MHz - 55 80 pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.2V - - 1.7 A
I
SM
Pulsed Source Current ( Body Diode )
1
-
-
20
A
V
SD
Forward On Voltage
2
T
j
=25
C, I
S
=1.7A, V
GS
=0V - 0.8 1.2 V
Notes:
1.Pulse width limited by
max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10sec.
4.Pulse width <10us , duty cycle <1%.
100
Rev.2.01 7/01/2004
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3 of 11
SSM4532M
P-ch
annel Electrical Characteristics @ T
j
=25
o
C
(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250uA -30 - - V
BV
DSS
/
Tj
Breakdown Voltage Temperature Coefficient
Reference to 25
C, I
D
=-1mA -
-0.028
-
V/C
R
DS(ON)
Static Drain-Source On-Resistance V
GS
=-10V, I
D
=-4A - - 70
m
V
GS
=-4.5V, I
D
=-3A - - 90
m
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
, I
D
=-250uA -1 - -3 V
g
fs
Forward Transconductance V
DS
=-10V, I
D
=-4A - 5 - S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V - - -1 uA
Drain-Source Leakage Current (T
j
=55
o
C)
V
DS
=-24V, V
GS
=0V - - -25 uA
I
GSS
Gate-Source Leakage V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=-4A - 18.3 36 nC
Q
gs
Gate-Source Charge V
DS
=-10V - 3.6 - nC
Q
gd
Gate-Drain ("Miller") Charge V
GS
=-10V - 1.5 - nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-10V - 8 16 ns
t
r
Rise Time I
D
=-1A - 9 18 ns
t
d(off)
Turn-off Delay Time R
G
=6
,V
GS
=-10V
- 21 40 ns
t
f
Fall Time R
D
=10
-
10
20
ns
C
iss
Input Capacitance V
GS
=0V - 760 1140 pF
C
oss
Output Capacitance V
DS
=-25V - 345 518 pF
C
rss
Reverse Transfer Capacitance f=1.0MHz - 90 135 pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=-1.2V - - -1.7 A
I
SM
Pulsed Source Current ( Body Diode )
1
- - -20 A
V
SD
Forward On Voltage
2
T
j
=25
C, I
S
=-1.7A, V
GS
=0V - - -1.2 V
Notes:
1.Pulse width limited by
max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10sec.
4.Pulse width <10us , duty cycle <1%.
20V
100
Rev.2.01 7/01/2004
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4 of 11
SSM4532M
N-channel
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance
vs. Junction Temperature
0
10
20
30
40
50
60
70
0
1
2
3
4
5
6
7
8
9
V
DS
, Drain-to-Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
rr
e
nt
(
A
)
T
C
=25
o
C
V
G
=10V
V
G
=4.0V
V
G
=8.0V
V
G
=6.0V
V
G
=3.0V
0
10
20
30
40
50
0
1
2
3
4
5
6
7
V
DS
, Drain-to-Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
rr
e
nt
(
A
)
T
C
=150
o
C
V
G
=4.0V
V
G
=6.0V
V
G
=8.0V
V
G
=10V
V
G
=3.0V
35
45
55
65
75
85
3
4
5
6
7
8
9
10
11
V
GS
(V)
R
D
S
ON
(m
)
Id=5A
T
c
=25C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
T
j
, Junction Temperature (
o
C)
N
o
r
m
ali
z
ed R
D
S
(
ON)
I
D
=5A
V
G
=10V
Rev.2.01 7/01/2004
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5 of 11
SS
M4532M
N-channel
Fig 5. Maximum Drain Current vs. Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
0
1
2
3
4
5
6
25 50 75 100 125 150
T
c
, Case Temperature (
o
C)
I
D
,
D
r
a
i
n
C
u
rr
e
nt
(
A
)
0
1
2
3
0 50 100 150
T
c
,Case Temperature (
o
C)
P
D
(
W
)
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
N
o
r
m
ali
z
ed
T
h
e
r
m
a
l Re
s
po
n
s
e
(
R
t
h
j
a
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
0.1
1
10
100
0.1 1 10 100
V
DS
(V)
I
D
(
A
)
T
c
=25
o
C
Single Pulse
10us
100us
1ms
10ms
100ms
Rev.2.01 7/01/2004
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