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Электронный компонент: SXA-389

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Product Description
1
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
Phone: (800) SMI-MMIC
http://www.sirenza.com
522 Almanor Ave., Sunnyvale, CA 94085
EDS-102231 Rev C
0
5
10
15
20
25
30
35
40
45
50
850 MHz
1960 MHz
2140 MHz
2450 MHz
OIP3
P1dB
Gain
SXA-389
400-2500 MHz W Medium Power
GaAs HBT Amplifier with Active Bias
Product Features
On-chip Active Bias Control, Single 5V Supply
High Output 3rd Order Intercept:
+42 to +44 dBm typ.
High P1dB : +25 dBm typ.
High Gain: +19 dB at 850 MHz
High Efficiency: consumes only 600 mW
 Patented High Reliability GaAs HBT Technology
Surface-Mountable Power Plastic Package
Applications
W-CDMA, PCS, Cellular Systems
High Linearity IF Amplifiers
Multi-Carrier Applications
Sirenza Microdevices' SXA-389 amplifier is a high
efficiency GaAs Heterojunction Bipolar Transistor (HBT)
MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable
and consistent performance from wafer to wafer and lot to
lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 400-2500 MHz
cellular, ISM, WLL, PCS, W-CDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
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2
Phone: (800) SMI-MMIC
http://www.sirenza.com
522 Almanor Ave., Sunnyvale, CA 94085
EDS-102231 Rev C
SXA-389
W GaAs HBT Amplifier
-75
-70
-65
-60
-55
-50
-45
-40
10
12
14
16
18
20
25C
85C
-40C
35
38
41
44
47
50
0
3
6
9
12
15
-40C
25C
85C
3 5
3 8
4 1
4 4
4 7
5 0
0 .8
0 .8 5
0 .9
0 .9 5
-40C
25C
85C
-3 0
-2 5
-2 0
-1 5
-1 0
-5
0
0 .8
0 .8 5
0 .9
0 .9 5
S 1 1
S 1 2
S 2 2
15
17
19
21
23
25
0.8
0.85
0.9
0.95
-40C
25C
85C
20
22
24
26
28
30
0.8
0.85
0.9
0.95
25C
85C
-40C
P1dB vs. Frequency
GHz
dBm
850 MHz Application Circuit Data, V
CC
= 5V, I
D
= 120mA
Note: Tuned for Output IP3
GHz
dB
GHz
Gain vs. Frequency
dB
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
GHz
dBm
Third Order Intercept vs. Tone Power
Frequency = 850 MHz
P
OUT
per tone (dBm)
dBm
880 MHz Adjacent Channel Power vs.
Channel Output Power
Adjacent Channel Power (dBc)
Channel Output Power (dBm)
IS-95, 9 Channels Forward
Input/Output Return Loss,
Isolation vs. Frequency, T=25
C
3
Phone: (800) SMI-MMIC
http://www.sirenza.com
522 Almanor Ave., Sunnyvale, CA 94085
EDS-102231 Rev C
SXA-389
W GaAs HBT Amplifier
-30
-25
-20
-15
-10
-5
0
1.93
1.94
1.95
1.96
1.97
1.98
1.99
S 11
S 12
S 22
10
12
14
16
18
20
1.93
1.94
1.95
1.96
1.97
1.98
1.99
25C
85C
-40C
35
38
41
44
47
50
1.93
1.94
1.95
1.96
1.97
1.98
1.99
-40C
25C
85C
35
38
41
44
47
50
0
3
6
9
12
15
-40C
25C
85C
-75
-70
-65
-60
-55
-50
-45
-40
10
12
14
16
18
20
25C
85C
-40C
20
22
24
26
28
30
1.93
1.94
1.95
1.96
1.97
1.98
1.99
25C
85C
-40C
1960 MHz Application Circuit Data, V
CC
= 5V, I
D
= 120mA
Note: Tuned for Output IP3
P1dB vs. Frequency
GHz
dBm
GHz
Gain vs. Frequency
dB
dB
Input/Output Return Loss,
Isolation vs. Frequency, T=25
C
GHz
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
GHz
dBm
Third Order Intercept vs. Tone Power
Frequency = 1.96 GHz
P
OUT
per tone (dBm)
dBm
1960 MHz Adjacent Channel Power vs.
Channel Output Power
Adjacent Channel Power (dBc)
Channel Output Power (dBm)
IS-95, 9 Channels Forward
4
Phone: (800) SMI-MMIC
http://www.sirenza.com
522 Almanor Ave., Sunnyvale, CA 94085
EDS-102231 Rev C
SXA-389
W GaAs HBT Amplifier
-30
-25
-20
-15
-10
-5
0
2.11
2.12
2.13
2.14
2.15
2.16
2.17
S 11
S 12
S 22
10
12
14
16
18
20
2.11
2.12
2.13
2.14
2.15
2.16
2.17
25C
85C
-40C
35
38
41
44
47
50
0
3
6
9
12
15
-40C
25C
85C
35
38
41
44
47
50
2.11
2.12
2.13
2.14
2.15
2.16
2.17
-40C
25C
85C
-70
-65
-60
-55
-50
-45
-40
10
11
12
13
14
15
16
17
25C
85C
-40C
20
22
24
26
28
30
2.11
2.12
2.13
2.14
2.15
2.16
2.17
25C
85C
-40C
2140 MHz Application Circuit Data, V
CC
= 5V, I
D
= 120mA
Note: Tuned for Output IP3
P1dB vs. Frequency
GHz
dBm
GHz
Gain vs. Frequency
dB
dB
Input/Output Return Loss,
Isolation vs. Frequency, T=25
C
GHz
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
GHz
dBm
Third Order Intercept vs. Tone Power
Frequency = 2.14 GHz
P
OUT
per tone (dBm)
dBm
2140 MHz Adjacent Channel Power vs.
Channel Output Power
Adjacent Channel Power (dBc)
Channel Output Power (dBm)
W-CDMA, 64 DPCH + Overhead
5
Phone: (800) SMI-MMIC
http://www.sirenza.com
522 Almanor Ave., Sunnyvale, CA 94085
EDS-102231 Rev C
SXA-389
W GaAs HBT Amplifier
-40
-35
-30
-25
-20
-15
-10
-5
0
2.4
2.42
2.44
2.46
2.48
2.5
S 11
S 12
S 22
35
38
41
44
47
50
0
3
6
9
12
15
-40C
25C
85C
35
38
41
44
47
50
2.4
2.42
2.44
2.46
2.48
2.5
-40C
25C
85C
10
12
14
16
18
20
2.4
2.42
2.44
2.46
2.48
2.5
25C
85C
-40C
20
22
24
26
28
30
2.4
2.42
2.44
2.46
2.48
2.5
25C
85C
-40C
2450 MHz Application Circuit Data, V
CC
= 5V, I
D
= 120mA
Note: Tuned for Output IP3
P1dB vs. Frequency
GHz
dBm
GHz
Gain vs. Frequency
dB
dB
Input/Output Return Loss,
Isolation vs. Frequency, T=25
C
GHz
Third Order Intercept vs. Frequency
(P
OUT
per tone = 11dBm)
GHz
dBm
Third Order Intercept vs. Tone Power
Frequency = 2.45 GHz
P
OUT
per tone (dBm)
dBm