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Электронный компонент: SZA-2044

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The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user
'
s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
1
EDS-103612 Rev C
Sirenza Microdevices
'
SZA-2044 is a high efficiency class
AB Heterojunction Bipolar Transistor (HBT) amplifier
housed in a low-cost surface-mountable plastic package.
This HBT amplifier is made with InGaP on GaAs device
technology and fabricated with MOCVD for an ideal combi-
nation of low cost and high reliability.
This product is specifically designed as a final stage for
802.11b/g and 801.16 equipment in the 2.0-2.7 GHz bands.
It can run from a 3V to 5V supply. Optimized on-chip imped-
ance matching circuitry provides a 50 nominal RF input
impedance. The external output match and bias adjustabil-
ity allows load line optimization for other applications or
over narrower bands. It features an output power detector,
on/off power control and high RF overdrive robustness.
Key Specifications
Symbol
Parameters: Test Conditions, App circuit page 4
Z
0
= 50 , V
CC
= 5.0V, Iq = 300mA, T
BP
= 30
C
Unit
Min.
Typ.
Max.
f
O
Frequency of Operation
MHz
2000
2700
P
1dB
Output Power at 1dB Compression
2.4 GHz
dBm
29.5
Output Power at 1dB Compression
2.5 GHz
28.0
29.5
S
21
Small Signal Gain at 2.4 GHz
dB
23.5
25.5
27.5
Small Signal Gain at 2.5 GHz
23.5
25.5
27.5
Pout
Output power at 3% EVM 802.11g 54Mb/s - 2.4GHz
dBm
22.5
Output Power at 3% EVM 802.11g 54Mb/s - 2.5GHz
22.5
NF
Noise Figure at 2.5 GHz
dB
6.1
IM3
Third Order Intermod at 18dBm per tone - 2.5GHz
dBc
-44
-40
IRL
Worst Case Input Return Loss 2.4-2.5GHz
dB
10
13
ORL
Worst Case Output Return Loss 2.4-2.5GHz
9
11
Vdet Range
Output Voltage Range for Pout=15dBm to 29dBm
V
0.9 to 1.7
I
cq
Quiescent Current (V
cc
= 5V)
mA
255
300
345
I
VPC
Power Up Control Current, Vpc=5V, ( I
VPC1
+ I
VPC2
)
mA
1.9
R
th, j-l
Thermal Resistance (junction - lead)
C/W
28
Functional Block Diagram
SZA-2044
2.0-2.7 GHz 5V 1W Power Amplifier
Product Features
Applications
802.11g 54Mb/s Class AB Performance
Pout = 22.5dBm @ 3% EVM, 5V, 340mA
Pout = 18dBm @ 3% EVM, 3.3V, 175mA
On-chip Output Power Detector
P1dB = 29.5dBm @ 5V, P1dB = 25dBm @ 3.3V
Robust - Survives RF Input Power = +15dBm
- 1000V ESD Class 1C
Power up/down control < 1 s
802.11b/g WLAN
2.4GHz ISM General Purpose Applications
WiMax 802.16, MMDS and MDS bands
Product Description
4mm x 4mm QFN Package
RFIN
RFOUT
Vcc
Pow er Detector
Vout
Activ e
Bias
Activ e
Bias
Pow er
Up/Dow n
Control
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303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
2
EDS-103612 Rev C
SZA-2044 2.0-2.7 GHz 5V Power Amp
Pin Out Description
Pin #
Function
Description
1,2,4,5,
7,9,11,
13,
15,17,19
N/C
These are unused pins and not wired inside the package. They may be grounded or connected to adjacent
pins.
6
VPC1
VPC1 is the bias control pin for the stage 1 active bias circuit. An external series resistor is required for proper
setting of bias levels. Refer to the evaluation board schematic for resistor value. To prevent potential damage,
do not apply voltage to this pin that is +1V greater than voltage applied to pin 20 (Vbias) unless Vpc supply
current capability is less than 10 mA.
8
VPC2
VPC2 is the bias control pin for the stage 2 active bias circuit. An external series resistor is required for proper
setting of bias levels. Refer to the evaluation board schematic for resistor value. To prevent potential damage,
do not apply voltage to this pin that is +1V greater than voltage applied to pin 20 (Vbias) unless Vpc supply
current capability is less than 10 mA.
10
Vdet
Output power detector voltage. Load with > 10K ohms for best performance
3
RFIN
RF input pin. This is DC grounded internal to the IC. Do not apply voltage to this pin.
12,14
RFOUT
RF output pin. This is also another connection to the 2nd stage collector.
16
VC2
2nd stage collector bias pin. Apply 3.0 to 5.0V to this pin.
18
VC1
1st stage collector bias pin. Apply 3.0 to 5.0V to this pin.
20
Vbias
Active bias network VCC. Apply 3.0 to 5.0V to this pin.
EPAD
Gnd
Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for
optimum thermal and RF performance. Several vias should be located under the EPAD as shown in the rec-
ommended land pattern (page 5).
Caution: ESD Sensitive
Appropriate precaution in handling, packaging
and testing devices must be observed.
Absolute Maximum Ratings
Parameters
Value
Unit
VC2 Collector Bias Current (I
VC2
)
500
mA
VC1 Collector Bias Current (I
VC1
)
150
mA
Device Voltage (V
D
)
7.0
V
Power Dissipation
3
W
Operating Lead Temperature (T
L
)
-40 to +85
C
Max RF Input Power for 50 ohm output
load
15
dBm
Max RF Input Power for 10:1 VSWR RF
out load
8
dBm
Storage Temperature Range
-40 to +150
C
Operating Junction Temperature (T
J
)
+150
C
ESD Human Body Model (Class 1C)
>1000
V
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the following expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
'
j-l
Simplified Device Schematic
Stage 1
Bias
Stage 2
Bias
Pin 3
Pin 12, 14
Pin
20
Pin
6
Pin
18
Pin
8
Pin
16
Pin
10
EPAD
EPAD
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303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
3
EDS-103612 Rev C
SZA-2044 2.0-2.7 GHz 5V Power Amp
Performance: 2.3 - 2.7 GHz Evaluation Board Data (V
cc
= V
pc
= 5.0V, I
q
= 300mA)
S11 - Input Return Loss
-20
-15
-10
-5
0
0
1
2
3
4
5
6
Freq (GHz)
T=-40C
T=25C
T=85C
S21 - Gain
0
5
10
15
20
25
30
0
1
2
3
4
5
6
Freq (GHz)
T=-40C
T=25C
T=85C
Narrowband S11 - Input Return Loss
-20
-15
-10
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Freq (GHz)
T=-40C
T=0C
T=25C
T=70C
T=85C
S12 - Isolation
-80
-70
-60
-50
-40
-30
-20
-10
0
0
1
2
3
4
5
6
Freq (GHz)
T=-40C
T=25C
T=85C
Narrowband S12 - Isolation
-80
-70
-60
-50
-40
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Freq (GHz)
T=-40C
T=0C
T=25C
T=70C
T=85C
S22 - Output Return Loss
-20
-15
-10
-5
0
0
1
2
3
4
5
6
Freq (GHz)
T=-40C
T=25C
T=85C
background image
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
4
EDS-103612 Rev C
SZA-2044 2.0-2.7 GHz 5V Power Amp
Narrowband S21 - Gain
15
20
25
30
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Freq (GHz)
S
2
1
(
d
B
)
T=-40C
T=0C
T=25C
T=70C
T=85C
Narrowband S22 - Output Return Loss
-20
-15
-10
-5
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Freq (GHz)
S
2
2
(
d
B
)
T=-40C
T=0C
T=25C
T=70C
T=85C
Performance: 2.3 - 2.7 GHz Evaluation Board Data (V
cc
= V
pc
= 5.0V, I
q
= 300mA)
DC Supply Current (Idc) vs Pout, T=25C
0.25
0.30
0.35
0.40
0.45
0.50
0.55
10.0
15.0
20.0
25.0
30.0
Pout (dBm)
F=2.4GHz
F=2.5GHz
F=2.7GHz
EVM vs Pout, F=2.4GHz
802.11g, OFDM, 54 Mb/s, 64QAM
0
1
2
3
4
5
6
5
10
15
20
25
Pout (dBm)
T=-40C
T=0C
T=25C
T=70C
T=85C
EVM vs Pout, F=2.5GHz
802.11g, OFDM, 54 Mb/s, 64QAM
0
1
2
3
4
5
6
5
10
15
20
25
Pout (dBm)
T=-40C
T=0C
T=25C
T=70C
T=85C
Icq (DC Bias Point) vs Vsupply (V+ and Vpc)
0.0
0.1
0.2
0.3
0.4
0.5
3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6
Vsupply (V)
T=-40C
T=25C
T=85C
background image
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
http://www.sirenza.com
5
EDS-103612 Rev C
SZA-2044 2.0-2.7 GHz 5V Power Amp
RF Power Detector (Vdet) vs Pout
F=2.4GHz
0.8
1.0
1.2
1.4
1.6
1.8
14
16
18
20
22
24
26
28
30
Pout (dBm)
V
d
e
t
(
V
)
T=-40C
T=25C
T=85C
Performance: 2.3 - 2.7 GHz Evaluation Board Data (V
cc
= V
pc
= 5.0V, I
q
= 300mA)
RF Power Detector (Vdet) vs Pout
F=2.5GHz
0.8
1.0
1.2
1.4
1.6
1.8
2.0
14
16
18
20
22
24
26
28
30
Pout (dBm)
T=-40C
T=25C
T=85C
RF Power Detector (Vdet) vs Pout
F=2.7GHz
0.8
1.0
1.2
1.4
1.6
1.8
2.0
14
16
18
20
22
24
26
28
30
Pout (dBm)
T=-40C
T=25C
T=85C
Gain vs Pout, T=25C
22
23
24
25
26
27
28
14
16
18
20
22
24
26
28
30
Pout (dBm)
F=2.4GHz
F=2.5GHz
IM3 vs Pout (2 tone avg.), T=25C
Tone Spacing=1MHz
-70
-60
-50
-40
-30
-20
-10
12
14
16
18
20
22
24
26
28
Pout (dBm)
F=2.4GHz
F=2.5GHz