S261/2
Silicon PIN diode
SOD523 SC-79
1
2
BAP64 02
2
ANODE
1
CATHODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
175
V
I
I
F
continuous forward current
100
mA
P
tot
total power dissipation
T
s
=90C
715
mW
T
stg
storage temperature
-65
+150
C
T
j
junction temperature
-65
+150
C
ELECTRICAL CHARACTERISTICS T
j
= 25C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
=50 mA
0.95
1.1
V
I
R
reverse current
V
R
=175V
10
A
V
R
=20V
1
A
C
d
diode capacitance
V
R
= 0; f = 1 MHz
0.48
pF
V
R
= 1 V; f = 1 MHz
0.35
pF
V
R
= 20 V; f = 1 MHz
0.23
0.35
pF
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
20
40
I
F
= 1 mA; f = 100 MHz; note 1
10
20
I
F
= 10 mA; f = 100 MHz; note 1
2
3.8
I
F
= 100 mA; f = 100 MHz; note 1
0.7
1.35
L
charge carrier life time
when switched from I
F
=10 mA to
1.55
s
I
R
= 6 mA; R
L
= 100
;
measured at I
R
=3 mA
L
S
series inductance
0.6
nH
Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering-point
85
K/W
FEATURES
High voltage, current controlled
RF resistor for RF attenuators and switches
Low diode capacitance
Low diode forward resistance
Very low series inductance
For applications up to 3 GHz.
APPLICATIONS
RF attenuators and switches.
DESCRIPTION
Planar PIN diode in a SOD523 ultra small plastic SMD package.
S262/2
BAP64-02
10
2
10
1
10
-1
0
4
8
12
16
20
I
F
(mA )
r
D
(
)
500
400
300
200
100
0
10
-1
1
10
10
2
V
R
( V )
C
d
(pF)
f = 100 MHz; T
j
=25C
f = 1 MHz; T
j
=25C
0
- 10
- 20
- 30
f (GHz )
0
-1
-2
-3
-4
-5
0.5
1
1.5
2
2.5
3
f (GHz )
|s
21
|
2
(dB)
Fig.1 Forward resistance as a function of
forward current; typical values.
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
|s
21
|
2
(dB)
Fig.3 Insertion loss ( |s
21
|
2
)of the diode in on-state
as a function of frequency; typical values.
Diode inserted in series with a 50
stripline circuit and
biased via the analyzer Tee network.
Tamb =25C.
Fig.4 Isolation ( |s
21
|
2
) of the diode in off-state as a
function of frequency; typical values.
Diode zero biased and inserted in
series with a 50
stripline circuit.
Tamb =25C.
(1) I
F
=100 mA.
(2) I
F
=10 mA.
(3) I
F
= 1 mA.
(4) I
F
= 0.5 mA.
0.5
1
1.5
2
2.5
3
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