BC856b1/5
1
3
2
Dual General Purpose Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT363/SC88 which is
designed for low power surface mount applications.
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
CollectorEmitter Voltage
V
CEO
65
45
30
V
CollectorBase Voltage
V
CBO
80
50
30
V
EmitterBase Voltage
V
EBO
5.0
5.0
5.0
V
Collector Current -Continuous
I
C
100
100
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
P
D
380
mW
Per Device
250
mW
FR 5 Board, (1) T
A
= 25C
Derate above 25C
3.0
mW/C
Thermal Resistance, Junction to Ambient
R
JA
328
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
1. FR5 = 1.0 x 0.75 x 0.062 in.
ORDERING INFORMATION
Device
Package
Shipping
BC856BDW1T1
SOT363
3000 Units/Reel
BC857BDW1T1
SOT363
3000 Units/Reel
BC857CDW1T1
SOT363
3000 Units/Reel
BC858BDW1T1
SOT363
3000 Units/Reel
BC858CDW1T1
SOT363
3000 Units/Reel
1
3
2
6
4
5
See Table
Q
1
Q
2
6
4
5
SOT363/SC88
CASE 419B STYLE 1
BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1
BC856b2/5
BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
V
(BR)CEO
V
(I
C
= 10 mA)
BC856 Series
65
--
--
BC857 Series
45
--
--
BC858 Series
30
--
--
CollectorEmitter Breakdown Voltage
V
(BR)CES
V
(I
C
= 10
A, V
EB
= 0)
BC856 Series
80
--
--
BC857 Series
50
--
--
BC858 Series
30
--
--
CollectorBase Breakdown Voltage
V
(BR)CBO
V
(I
C
= 10
A)
BC856 Series
80
--
--
BC857 Series
50
--
--
BC858 Series
30
--
--
EmitterBase Breakdown Voltage
V
(BR)EBO
V
(I
E
= 1.0
A)
BC856 Series
5.0
--
--
BC857 Series
5.0
--
--
BC858 Series
5.0
--
--
Collector Cutoff Current
(V
CB
= 30 V)
I
CBO
--
--
15
nA
(V
CB
= 30 V, T
A
= 150C)
--
--
4.0
A
ON CHARACTERISTICS
DC Current Gain
h
FE
--
(I
C
= 10
A, V
CE
= 5.0 V)
BC856B, BC857B, BC858B
--
150
--
BC857C, BC858C
--
270
--
(I
C
= 2.0 mA, V
CE
= 5.0 V) BC856B, BC857B, BC858B
220
290
475
BC857C, BC858C
420
520
800
CollectorEmitter Saturation Voltage (I
C
= -10 mA, I
B
= -0.5 mA) V
CE(sat)
--
--
0.3
V
CollectorEmitter Saturation Voltage
( I
C
= -100 mA, I
B
= -5.0 mA)
--
--
0.65
BaseEmitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.5 mA)
V
BE(sat)
--
0.7
--
V
BaseEmitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA)
--
0.9
--
BaseEmitter Voltage (I
C
= 2.0 mA, V
CE
= 5.0 V)
V
BE(on)
0.6
0.75
V
BaseEmitter Voltage
(I
C
= 10 mA, V
CE
= 5.0 V)
--
--
0.82
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
f
T
100
--
--
MHz
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
C
obo
--
--
4.5
pF
Noise Figure (I
C
= 0.2 mA,
NF
dB
V
CE
= 5.0 V
dc
, R
S
= 2.0 k
, f = 1.0 kHz, BW = 200 Hz)
--
--
10
BC856b3/5
TYPICAL PNP CHARACTERISTICS -- BC856
BC856BDW1T1, BC857BDW1T1, BC857CDW1T1
BC858BDW1T1, BC858CDW1T1
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10
-20
-50 -100 -200
2.0
1.0
0.5
0.2
I
C
, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 2. "On" Voltage
V
CE
, COLLECT
OR EMITTER VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN (NORMALIZED)
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100
-200
-1.0
-0.8
-0.6
-0.4
-0.2
0
V
,
VOL
T
AGE (VOL
TS)
-0.02
-0.05
-0.1
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-2.0
-1.6
-1.2
-0.8
-0.4
0
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 4. BaseEmitter Temperature Coefficient
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100
-200
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
VB
,
TEMPERA
TURE
COEFFICIENT
(mV/
C)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
I
C
, COLLECTOR CURRENT (mA)
Figure 6. CurrentGain Bandwidth Product
-1.0
-10
-100
500
200
100
50
20
-0.1
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100
40
20
10
0.8
6.0
4.0
2.0
f
T
, CURRENT
-GAIN-BANDWIDTH PRODUCT(MHz)
C, CAP
ACIT
ANCE (pF)
BC856b4/5
TYPICAL PNP CHARACTERISTICS -- BC857/BC858
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100
-200
2.0
1.5
1.0
0.7
0.5
0.3
0.2
I
C
, COLLECTOR CURRENT (mAdc)
Figure 7. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
Figure 8. "Saturation" and "On" Voltages
V
CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN (NORMALIZED)
-1.0
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-50
-100
-1.0
-0.8
-0.6
-0.4
-0.2
0
V
,
VOL
T
AGE (VOL
TS)
-0.02
-0.05
-0.1
-0.2
-0.5
-1.0
-2.0
-5.0
-10
-20
-2.0
-1.6
-1.2
-0.8
-0.4
0
I
B
, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 10. BaseEmitter Temperature Coefficient
-0.2
-0.5
-1.0
-10
-100
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
VB
,
TEMPERA
TURE
COEFFICIENT
(mV/
C)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Current-Gain-Bandwidth Product
-0.5
-1.0
-2.0
-3.0
-5.0
-10
-20
-30
-50
400
300
200
150
100
80
60
40
30
20
-0.4
-0.6
-1.0
-2.0
-4.0
-6.0
-10
-20
-30 -40
10
7.0
5.0
3.0
2.0
1.0
f
T
, CURRENT
-GAIN-BANDWIDTH PRODUCT(MHz)
C, CAP
ACIT
ANCE (pF)
BC856BDW1T1, BC857BDW1T1, BC857CDW1T1
BC858BDW1T1, BC858CDW1T1
BC856b5/5
BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1
SINGLE PULSE
t
1
Z
JA
(t) = r(t) R
JA
R
JA
= 328C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
R
JC
(t)
t
2
P
(pk)
DUTY CYCLE, D = t
1
/t
2
D=0.5
0.2
0.1
0.05
0.02
0.01
t, TIME (ms)
Figure 13. Thermal Response
0
1.0
10
100
1.0K
10K
100K
1.0M
1.0
0.1
0.01
0.001
I
C
, COLLECT
OR CURRENT
(mA)
r(t), TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
-200
-100
-50
-10
-5.0
-2.0
-1.0
-5.0
-10
-30
-45
-65
-100
V
CE
, COLLECTOREMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
The safe operating area curves indicate I
C
V
CE
limits of
thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
< 150C. T
J
(pk) may be calculated from the data in Figure 13. At high
case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by the secondary breakdown.
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