MBD541/4
1
3
2
Dual SCHOTTKY Barrier Diodes
MAXIMUM RATINGS (T = 12
5
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
30
Volts
Forward Power Dissipation
P
F
@ T
A
= 25C
150
mW
Derate above 25C
1.2
mW/C
Forward Current (DC)
I
F
200 Max
mA
Junction Temperature
T
J
125 Max
C
Storage Temperature Range
T
stg
55 to +150
C
DEVICE MARKING
MBD54DWT1 = BL
ELECTRICAL CHARACT
ERISTICS (T
A
= 25C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (I
R
= 10
A)
V
(BR)R
30
--
--
Volts
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
C
T
--
7.6
10
pF
Reverse Leakage (V
R
= 25 V)
I
R
--
0.5
2.0
Adc
Forward Voltage (I
F
= 0.1 mAdc)
V
F
--
0.22
0.24
Vdc
Forward Voltage (I
F
= 30 mAdc)
V
F
--
0.41
0.5
Vdc
Forward Voltage (I
F
= 100 mAdc)
V
F
--
0.52
1.0
Vdc
Reverse Recovery Time
t
rr
--
--
5.0
ns
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) Figure 1
Forward Voltage (I F = 1.0 mAdc)
V
F
--
0.29
0.32
Vdc
Forward Voltage (I F = 10 mAdc)
V
F
--
0.35
0.40
Vdc
Forward Current (DC)
I
F
--
--
200
mAdc
Repetitive Peak Forward Current
I
FRM
--
--
300
mAdc
NonRepetitive Peak Forward Current (t <1.0s) I
FSM
--
--
600
mAdc
6
4
5
SOT363
CASE 419B01, STYLE 6
MBD54DWT1
1
2
3
Anode
N/C
Cathode
Cathode
N/C
Anode
6
5
4
These SCHOTTKY barrier diodes are designed for high speed switching
applications, circuit protection, and vol tage clamping. Extremely low forward
voltage reduces conduction loss. Miniature surface mount package is excellent
for hand held and portable applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage -- 0.35 V @ I
F
= 10 mAdc
30 VOLTS
DUAL HOTCARRIER
DETECTOR AND SWITCHING
DIODES
MBD542/4
MBD54DWT1
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
t
rr
Figure 1. Recovery Time Equivalent Test Circuit
0.0
0.1
0.2
0.3
0.4
0.5
0.6
100
10
1.0
0.1
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
I
F
, FOR
W
ARD CURRENT
(mA)
0
5
10
15
20
25
30
1000
100
10
1
0.1
0.01
0.001
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
I
R
, REVERSE CURRENT
( m
A)
C
T
,
T
O
T
A
L
CAP
ACIT
ANCE
(pF)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
0
5
10
15
20
25
30
14
12
10
8
6
4
2
0
MBD543/4
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
MBD110DWT1 MBD330DWT1 MBD770DWT1
INFORMATION FOR USING THE SOT363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT363
0.5 mm (min)
SOT363 POWER DISSIPATION
0.4 mm (min)
0.65 mm 0.65 mm
1.9 mm
The power dissipation of the SOT363 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by
TJ(max)
, the maximum rated junction temperature of the
die, R
qJA
, the thermal resistance from the device junction
to ambient, and the operating temperature,
T
A
. Using the
values provided on the data sheet for the SOT363 package,
PD
can be calculated as follows:
P
D
=
T
J(max)
T
A
R
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature
T
A
of 25C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.
P
D
=
150C 25C
= 150 milliwatts
833C/W
The 833C/W for the SOT363 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 150 milliwatts.
There are other alternatives to achieving higher power dis-
sipation from the SOT363 package. Another alternative
would be to use a ceramic substrate or
an aluminum core board such as Thermal CladE. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than
the rated temperature of the device. When the entire
device is heated to a high temperature, failure to com-
plete soldering within a short time could result in de-
vice failure. Therefore, the following items should al-
ways be observed in order to minimize the thermal stress
to which the devices are subjected.
Always preheat the device.
The delta temperature between the preheat and sol-
dering should be 100C or less.*
When preheating and soldering, the temperature of
the leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10C.
The soldering temperature and time shall not exceed
260C for more than 10 seconds.
When shifting from preheating to soldering, the maxi-
mum temperature gradient shall be 5C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied dur-
ing cooling.
* Soldering a device without preheating can cause ex-
cessive thermal shock and stress which can result in
damage to the device.
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