MBT39041/12
1
3
2
Dual General Purpose Transistors
MAXIMUM RATINGS
Rating
Symbol
Voltage
Unit
CollectorEmitter Voltage
V
CEO
V
MBT3904DW1T1 (NPN)
40
MBT3906DW1T1 (PNP)
40
CollectorBase Voltage
V
CBO
V
MBT3904DW1T1 (NPN)
60
MBT3906DW1T1 (PNP)
40
EmitterBase Voltage
V
EBO
V
MBT3904DW1T1 (NPN)
6.0
MBT3906DW1T1 (PNP)
5.0
Collector Current -Continuous
I
C
mAdc
MBT3904DW1T1 (NPN)
200
MBT3906DW1T1 (PNP)
200
Electrostatic Discharge
ESD
HBM>16000,
V
MM>2000
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation(1)
P
D
150
mW
T
A
= 25C
Thermal Resistance,
R
JA
833
C/W
Junction to Ambient
Junction and Storage
T
J
, T
stg
55 to +150
C
Temperature
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
See Table
6
4
5
SOT363/SC88
CASE 419B STYLE 1
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
MBT3904DW1T1
MBT3906DW1T1
1
3
2
6
4
5
Q
1
Q
2
1
3
2
6
4
5
Q
1
Q
2
MBT3946DW1T1
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are
spinoffs of our popular SOT23/SOT323 threeleaded devices. They are designed
for general purpose amplifier applications and are housed in the SOT363 sixleaded
surface mount package. By putting two discrete devices in one package, these devices
are ideal for lowpower surface mount applications where board space is at a premium.
h
FE
, 100300
Low V
CE(sat)
,
3
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7inch/3,000 Unit Tape and Reel
1
3
2
6
4
5
Q
1
Q
2
*Q
1
same as MBT3906DW1T1
Q
2
same as MBT3904DW1T1
ORDERING INFORMATION
Device
Package
Shipping
MBT3904DW1T1
SOT363
3000 Units/Reel
MBT3906DW1T1
SOT363
3000 Units/Reel
MBT3946DW1T1
SOT363
3000 Units/Reel
MBT39042/12
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (2)
V
(BR)CEO
Vdc
(I
C
= 1.0 mAdc, I
B
= 0)
MBT3904DW1T1 (NPN)
40
--
(I
C
= 1.0 mAdc, I
B
= 0)
MBT3906DW1T1 (PNP)
40
--
CollectorBase Breakdown Voltage
V
(BR)CBO
Vdc
(I
C
= 10
Adc, I
E
= 0)
MBT3904DW1T1 (NPN)
60
--
(I
C
= 10
Adc, I
E
= 0)
MBT3906DW1T1 (PNP)
40
--
EmitterBase Breakdown Voltage
V
(BR)EBO
Vdc
(I
E
= 10
Adc, I
C
= 0)
MBT3904DW1T1 (NPN)
6.0
--
(I
E
= 10
Adc, I
C
= 0)
MBT3906DW1T1 (PNP)
5.0
--
Base Cutoff Current
I
BL
nAdc
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
MBT3904DW1T1 (NPN)
--
50
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc) MBT3906DW1T1 (PNP)
--
50
Collector Cutoff Current
I
CEX
nAdc
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
MBT3904DW1T1 (NPN)
--
50
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc) MBT3906DW1T1 (PNP)
--
50
ON CHARACTERISTICS (2)
DC Current Gain
h
FE
Vdc
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
MBT3904DW1T1 (NPN)
40
--
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
70
--
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
100
--
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
60
--
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
30
--
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
MBT3906DW1T1 (PNP)
60
--
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
80
--
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
100
--
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
60
--
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
30
--
CollectorEmitter Saturation Voltage
V
CE(sat)
Vdc
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
MBT3904DW1T1 (NPN)
--
0.2
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
--
0.3
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
MBT3906DW1T1 (PNP)
--
0.25
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
--
0.4
BaseEmitter Saturation Voltage
V
BE(sat)
Vdc
(I C = 10 mAdc, I B = 1.0 mAdc)
MBT3904DW1T1 (NPN)
0.65
0.85
(I C = 50 mAdc, I B = 5.0 mAdc)
--
0.95
(I C = 10 mAdc, I B = 1.0 mAdc)
MBT3906DW1T1 (PNP)
0.65
0.85
(I C = 50 mAdc, I B = 5.0 mAdc)
--
0.95
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
f
T
MHz
(I
C
= 10 mAdc, V
CE
= 20 Vdc,
MBT3904DW1T1 (NPN)
300
--
f = 100 MHz)
(I
C
= 10 mAdc, V
CE
= 20 Vdc,
MBT3906DW1T1 (PNP)
250
--
f = 100 MHz)
Output Capacitance
C
obo
pF
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz) MBT3904DW1T1 (NPN)
--
4.0
(V
CB
= 5.0 Vdc, I
E
= 0,
MBT3906DW1T1 (PNP)
--
4.5
f = 1.0 MHz)
Input Capacitance
C
ibo
pF
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) MBT3904DW1T1 (NPN)
--
8.0
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
MBT3906DW1T1 (PNP)
--
10.0
2. Pulse Test: Pulse Width < 300 ms; Duty Cycle< 2.0%.
MBT39043/12
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
Input Impedance
h
ie
k
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
1.0
10
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
2.0
12
Voltage Feedback Ratio
h
re
X 10
4
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
0.5
8.0
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
0.1
10
SmallSignal Current Gain
h
fe
--
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
100
400
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
100
400
Output Admittance
h
oe
mhos
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
1.0
40
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
3.0
60
Noise Figure
NF
dB
(V
CE
= 5.0 Vdc, I
C
= 100
Adc,
MBT3904DW1T1 (NPN)
--
5.0
R
S
= 1.0 k W, f = 1.0 kHz)
(V
CE
= 5.0 Vdc, I
C
= 100
Adc,
MBT3906DW1T1 (PNP)
--
4.0
R
S
= 1.0 k W, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time (V
CC
= 3.0 Vdc, V
BE
= 0.5 Vdc)
MBT3904DW1T1 (NPN)
t
d
--
35
ns
(V
CC
= 3.0 Vdc, V
BE
= 0.5 Vdc)
MBT3906DW1T1 (PNP)
--
35
Rise Time (I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
MBT3904DW1T1 (NPN)
t
r
--
35
ns
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
MBT3906DW1T1 (PNP)
--
35
Storage Time (V
CC
= 3.0 Vdc, I
C
= 10 mAdc)
MBT3904DW1T1 (NPN)
t
s
--
200
ns
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc)
MBT3906DW1T1 (PNP)
--
225
Fall Time (I
B1
= I
B2
= 1.0 mAdc)
MBT3904DW1T1 (NPN)
t
f
--
50
ns
(I
B1
= I
B2
= 1.0 mAdc)
MBT3906DW1T1 (PNP)
--
70
MBT39044/12
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
MBT3904DW1T1 (NPN)
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
DUTY CYCLE = 2%
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25C
T
J
= 125C
* Total shunt capacitance of test jig and connectors
0.1
0.2 0.3
0.5
0.71.0
2.0 3.0
5.0 7.0 10
20
30 40
10
7.0
5.0
3.0
2.0
1.0
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitancere
CAP
ACIT
ANCE (pF)
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
5000
3000
2000
1000
700
500
300
200
100
70
50
Q, CHARGE (pC)
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
MBT39045/12
MBT3904DW1T1 (NPN)
t `s , ST
ORAGE
TIME(ns)
TIME(ns)
t
r
, RISE
TIME (ns)
t
f
, F
ALL
TIME (ns)
500
300
200
100
70
50
30
20
10
7
5
12
10
8
6
4
2
0
NF, NOISE FIGURE (dB)
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 5. TurnOn Time
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Rise Time
I
C
, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V = 5.0 Vdc, T = 25C, Bandwidth = 1.0 Hz)
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
500
300
200
100
70
50
30
20
10
7
5
NF, NOISE FIGURE (dB)
500
300
200
100
70
50
30
20
10
7
5
500
300
200
100
70
50
30
20
10
7
5
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
1.0
2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
f,FREQUENCY (kHz)
Figure 9. Noise Figure
R
S
, SOURCE RESISTANCE (k
)
Figure 10. Noise Figure
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
14
12
10
8
6
4
2
0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
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