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Электронный компонент: MMBT404

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O11/2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
35
Vdc
CollectorBase Voltage
V
CBO
40
Vdc
EmitterBase Voltage
V
EBO
25
Vdc
Collector Current -- Continuous
I
C
150
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,(1)
P
D
225
mW
T
A
=25 C
Derate above 25C
1.8
mW/C
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Total Device Dissipation
P
D
300
mW
Alumina Substrate, (2) T
A
= 25C
Derate above 25C
2.4
mW/C
Thermal Resistance, Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
55 to +150
C
DEVICE MARKING
MMBT404ALT1 = 2N
ELECTRICAL CHARACTERISTICS
(T
A
= 2
5
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
V
(BR)CEO
35
--
--
Vdc
(I
C
= 10 mAdc, I
B
= 0)
Collector Emitter Breakdown Voltage
V
(BR)CBO
40
--
--
Vdc
(I
C
= 10
Adc, I
E
= 0)
EmitterBase Breakdown Voltage
V
(BR)EBO
25
--
--
Vdc
(I
E
= 10
Adc, I
C
= 0)
Collector Cutoff Current
I
CBO
--
--
100
nAdc
(V
CE
= 10Vdc, I
E
= 0)
Emitter Cutoff Current
I
EBO
--
--
100
nAdc
(V
EB
= 10Vdc, I
C
= 0)
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Chopper Transistor
PNP Silicon
MMBT404ALT1
CASE 31808, STYLE 6
SOT 23 (TO236AB)
2
EMITTER
3
COLLECTOR
1
BASE
1
3
2
O12/2
MMBT404ALT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
100
400
(I
C
= 12 mAdc, V
CE
= 0.15 Vdc)
CollectorEmitter Saturation Voltage
V
CE(sat)
Vdc
(I
C
= 12mAdc, I
B
= 0.4 mAdc)
0.15
(I
C
= 24mAdc, I
B
= 1.0 mAdc)
0.20
BaseEmitter Saturation Voltage
V
BE(sat)
Vdc
(I
C
= 12mAdc, I
B
= 0.4 mAdc)
0.85
(I
C
= 24mAdc, I
B
= 1.0 mAdc)
1.00
SMALLSIGNAL CHARACTERISTICS
Output Capacitance
C
obo
20
pF
(V
CB
= 6.0 Vdc, I
E
= 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay Time(V
CC
= 10Vdc, I
C
= 10 mVdc) (Figure 1)
t
d
--
43
--
ns
Rise Time ( I
B1
= 1.0 mAdc, I
BE(off)
= 14Vdc)
t
r
--
180
--
ns
Storage Time (V
CC
= 10 Vdc, I
C
= 10 mAdc)
t
s
--
675
--
ns
Fall Time (I
B1
= I
B2
= 1.0 mAdc)(Figure 1)
t
f
--
160
--
ns
Figure 1. Switching Time Test Circuit
Voltages and resistor values shown are
for I
C
= 10 mA, I
C
/I
B
= 10 and I
B1
= I
B2
V
in
V
BB
(Volts)
(Volts)
t
on
, t
d
, t
r
12
+1.4
t
off
, t
s
and t
f
+20.6
11.6
V
BB
R
BB
1.0 k
R
B
10 k
0.1
F
V
in
51
TO SCOPE
1.0 k
V
CC
= 10 V