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Электронный компонент: MMBV409LT1

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I21/2
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
M B V 4 0 9
MMBV409LT1
Unit
Reverse Voltage
V
R
20
20
Vdc
Forward Current
I
F
200
200
mAdc
Device Dissipation @T
A
= 25C
P
D
280
225
mW
Derate above 25C
2.8
1.8
mW/C
Junction Temperature
T
J
+125
C
Storage Temperature Range
T
stg
55 to +150
C
DEVICE MARKING
MMBV409LT1=X5,MV409=MV409
ELECTRICAL CHARACTERISTICS(T
A
=25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V
(BR)R
20
--
--
Vdc
(I
R
=10
Adc)
Reverse Voltage Leakage Current
I
R
--
--
0.1
Adc
(V
R
=15Vdc)
Diode Capacitance Temperature Coefficient
T
CC
--
300
--
ppm/C
Min
N o m
Max
Min
Min
Max
MMBV409LT1,MV409
26
29
32
200
1.5
1.9
1. C
R
is the ratio of C
t
measured at 3 Vdc divided by C
t
measured at 8 vdc
Device Type
C
T
Diode Capacitance
V
R
=3.0Vdc,f=1.0MHz
p F
Q,Figure of Merit
V
R
=3.0Vdc
f=50MHz
C
R
,Capacitance Ratio
C
3
/ C
8
f=1.0MHz(1)
CASE 31808, STYLE 8
SOT 23 (TO236AB)
MMBV409LT1
MV409
This device is designed in the surface Mount package for general frequency
control and tuning applications.It provides solid-state reliability in replacement of
mechanical tuning methods.
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
Silicon Tuning Diode
3
CATHODE
1
ANODE
VOLTAGE VARIABLE
CAPACITANCE DIODES
1
3
2
I22/2
MMBV409LT1 MV409
C
T
, DIODE CAP
ACIT
ANCE (pF)
Q , FIGURE OF MERIT
1000
100
10
10
100
1000
40
32
24
16
8
0
1
2
3
10
20
30
100
f
, FREQUENCY ( MHz )
Figure 2. Figure of Merit
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
f
= 1.0MHz
T
A
= 25C
V
R
=3Vdc
T
A
= 25C
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
75
50
25
0
+25
+50
+75
+100
+125
T
A
, AMBIENT TEMPERATURE (C)
Figure 4. Diode Capacitance
C
T
, DIODE CAP
ACIT
ANCE (NORMALIZED)
TYPICAL CHARACTERISTICS
V
R
= 3.0Vdc
f
= 1.0MHz
100
60
20
10
6.0
2.0
1.0
0.6
0.2
0.1
0.06
0.02
0.01
0.006
0.002
0.001
60
40
20
0
+20
+40
+60
+80
+100 +120 +140
T
A
, AMBIENT TEMPERATURE (C)
Figure 3. Leakage Current
I
R
, REVERSE CURRENT ( nA )
V
R
= 15Vdc