I51/2
CASE 31808, STYLE 8
SOT 23 (TO236AB)
MMBV809LT1
This device is designed for 900 MHz frequency control
and tuning applications. It provides solidstate reliability in
replacement of mechanical tuning methods.
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
Available in 8 mm Tape and Reel
Silicon Tuning Diode
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
Va l u e
Unit
Reverse Voltage
V
R
20
Vdc
Forward Current
I
F
20
mAdc
Device Dissipation
(1)
@T
A
= 25C
P
D
225
mW
Derate above 25C
1.8
mW/C
Junction Temperature
T
J
+125
C
Storage Temperature Range
T
stg
55 to +150
C
DEVICE MARKING
MMBV809LT1=5K
ELECTRICAL CHARACTERISTICS(T
A
=25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
V
(BR)R
20
--
Vdc
(I
R
=10
Adc)
Reverse Voltage Leakage Current
I
R
--
50
nAdc
(V
R
=15Vdc)
Min
Typ
Max
Typ
Min
Max
MMBV809LT1
4.5
5.3
6.1
75
1.8
2.6
1. FR-5 Board 1.0 x 0.75 x 0.62 in.
2. C
R
is the ratio of C
t
measured at 2.0 Vdc divided by C
t
measured at 8.0 vdc
Device Type
C
T
Diode Capacitance
V
R
=2.0Vdc,f=1.0MHz
p F
Q,Figure of Merit
V
R
=3.0Vdc
f=500MHz
C
R
,Capacitance Ratio
C
2
/ C
8
f=1.0MHz(2)
3
CATHODE
1
ANODE
(
1
3
2
I52/2
MMBV809LT1
C
T
, DIODE CAP
ACIT
ANCE (pF)
Q , FIGURE OF MERIT
1000
100
10
10
100
1000
10
9
8
7
6
5
4
3
2
1
0
0.5
1
2
3
4
5
8
10
15
f
, FREQUENCY ( GHz )
Figure 2. Figure of Merit
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
V
R
=3Vdc
T
A
= 25C
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
75
50
25
0
+25
+50
+75
+100
+125
T
A
, AMBIENT TEMPERATURE (C)
Figure 4. Diode Capacitance
C
T
, DIODE CAP
ACIT
ANCE (NORMALIZED)
TYPICAL CHARACTERISTICS
V
R
= 3.0Vdc
f
= 1.0MHz
1000
800
600
400
0
0.2
0.4
0.6
0.8
1.0
1.2
V
R
= 3.0Vdc
f = 1.0MHz
R
S
, SERIES RESIST
ANCE ( MHz)
f
, FREQUENCY ( GHz )
Figure 3. Series Resistance
PDF 
ZIP