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Электронный компонент: MMUN2214RLT1

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Q21/8
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor.The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace "T1" with "T3" in the Device Number to order
the 13 inch/10,000 unit reel.
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RL34
CASE 31808, STYLE 6
SOT 23 (TO236AB)
NPN SILICON
B I A S R E S I S T O R
TRANSISTOR
Bias Resistor Transistor
MAXIMUM RATINGS
(T
A
= 2
5
C unless otherwise noted)
Rating
Symbol
Va l u e
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
Total Power Dissipation @ T
A
= 2
5
C
(1)
P
D
200
mW
Derate above 2
5
C
1.6
mW
/
C
THERMAL CHARACTERISTICS
Rating
Symbol
Va l u e
Unit
Thermal Resistance -- Junction-to-Ambient (surface mounted)
R
JA
625
C/W
Operating and Storage Temperature Range
T
J
, T
stg
65 to +150
C
Maximum Temperature for Soldering Purposes
T
L
260
C
Time in Solder Bath
10
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
MMUN2211RLT1
A8A
10
10
MMUN2212RLT1
A8B
22
22
MMUN2213RLT1
A8C
47
47
MMUN2214RLT1
A8D
10
47
MMUN2215RLT1
(2)
A8E
10
MMUN2216RLT1
(2)
A8F
4.7
MMUN2230RLT1
(2)
A8G
1
1
MMUN2231RLT1
(2)
A8H
2.2
2.2
MMUN2232RLT1
(2)
A8J
4.7
4.7
MMUN2233RLT1
(2)
A8K
4.7
47
MMUN2234RLT1
(2)
A8L
22
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
R1
R2
PIN3
Collector
(output)
PIN1
base
(Input)
PIN2
Emitter
(Ground)
88
1
3
2
Q22/8
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
=50V, I
E
= 0)
I
CBO
-
-
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
-
-
500
nAdc
Emitter-Base Cutoff Current
MMUN2211RLT1
I
EBO
-
-
0.5
mAdc
(V
EB
= 6.0 V, I
C
= 0)
MMUN2212RLT1
-
-
0.2
MMUN2213RLT1
-
-
0.1
MMUN2214RLT1
-
-
0.2
MMUN2215RLT1
-
-
0.9
MMUN2216RLT1
-
-
1.9
MMUN2230RLT1
-
-
4.3
MMUN2231RLT1
-
-
2.3
MMUN2232RLT1
-
-
1.5
MMUN2233RLT1
-
-
0.18
MMUN2234RLT1
-
-
0.13
Collector-Base Breakdown Voltage (I
C
=10mA, I
E
=0)
V
(BR)CBO
50
-
-
Vdc
Collector-Emitter Breakdown Voltage
(3)
(I
C
=2.0mA, I
B
=0)
V
(BR)CEO
50
-
-
Vdc
ON CHARACTERISTICS
(3)
DC Current Gain
MMUN2211RLT1
h
FE
35
60
-
(V
CE
= 10 V, I
C
= 5.0 mA)
MMUN2212RLT1
60
100
-
MMUN2213RLT1
80
140
-
MMUN2214RLT1
80
140
-
MMUN2215RLT1
160
350
-
MMUN2216RLT1
160
350
-
MMUN2230RLT1
3.0
5.0
-
MMUN2231RLT1
8.0
15
-
MMUN2232RLT1
15
30
-
MMUN2233RLT1
80
200
-
MMUN2234RLT1
80
150
-
Collector-Emitter Saturation Voltage (I
C
=10mA, I
E
=0.3mA)
V
CE(sat)
-
-
0.25
Vdc
(I
C
= 10 mA, I
B
= 5 mA) MMUN2230RLT1
MMUN2231RLT1
(I
C
= 10 mA, I
B
= 1 mA) MMUN2215RLT1
MMUN2216RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
Output Voltage (on)
V
OL
Vdc
(V
CC
=5.0V,V
B
=2.5V, R
L
=1.0k
)
MMUN2211RLT1
-
-
0.2
MMUN2212RLT1
-
-
0.2
MMUN2214RLT1
-
-
0.2
MMUN2215RLT1
-
-
0.2
MMUN2216RLT1
-
-
0.2
MMUN2230RLT1
-
-
0.2
MMUN2231RLT1
-
-
0.2
MMUN2232RLT1
-
-
0.2
MMUN2233RLT1
-
-
0.2
MMUN2234RLT1
-
-
0.2
(V
CC
=5.0V,V
B
=3.5V, R
L
= 1.0k
)
MMUN2213RLT1
-
-
0.2
Output Voltage(off)(V
CC
=5.0V,V
B
=0.5V, R
L
=1.0k
)
V
OH
4.9
-
-
Vdc
(V
CC
=5.0V,V
B
=0.050V, R
L
=1.0k
)
MMUN2230RLT1
(V
CC
=5.0V,V
B
=0.25V, R
L
=1.0k
)
MMUN2215RLT1
MMUN2216RLT1
MMUN2233RLT1
MMUN2211RLT1 SERIES
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
Q23/8
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
M a x
Unit
ON CHARACTERISTICS
(3)
Input Resistor
MMUN2211RLT1
R1
7.0
10
13
k
MMUN2212RLT1
15.4
22
28.6
MMUN2213RLT1
32.9
47
61.1
MMUN2214RLT1
7.0
10
13
MMUN2215RLT1
7.0
10
13
MMUN2216RLT1
3.3
4.7
6.1
MMUN2230RLT1
0.7
1.0
1.3
MMUN2231RLT1
1.5
2.2
2.9
MMUN2232RLT1
3.3
4.7
6.1
MMUN2233RLT1
3.3
4.7
6.1
MMUN2234RLT1
15.4
22
28.6
Resistor Ratio
MMUN2211RLT1 MMUN2212RLT1 MMUN2213RLT1
R1/R2
0.8
1.0
1.2
MMUN2214RLT1
0.17
0.21
0.25
MMUN2215RLT1 MMUN2216RLT1
--
--
--
MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1
0.8
1.0
1.2
MMUN2233RLT1
0.055
0.1
0.185
MMUN2234RLT1
0.38
0.47
0.56
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%.
MMUN2211RLT1 SERIES
Q24/8
1000
100
10
1
10
100
4
3
2
1
0
0
10
20
30
40
50
250
200
150
100
50
0
50
0
50
10
150
1
0.1
0.01
0.001
MMUN2211RLT1 SERIES
T
A
= 25C
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211RLT1
AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
V
in
, INPUT
VOL
T
AGE (VOL
TS)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
V
in
, INPUT VOLTAGE (VOLTS)
Figure 5. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
Figure 6. V
CE(sta)
versus I
C
P
D
, POWER DISSIP
A
TION (MILLIW
A
TTS)
V
CE( sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
C ob , CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
0
20
40
60
80
100
10
1
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
10
1
0.1
0
10
20
30
40
50
25C
T
A
=75C
25C
75C
25C
T
A
= 25C
25C
75C
f = 1 MHz
l
E
= 0 V
T
A
= 25C
V
O
= 5 V
V
CE
= 10 V
V
O
= 0.2 V
R
JA
= 625C/W
I
C
/I
B
=10
T
A
= 25C
25C
75C
Q25/8
MMUN2211RLT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212RLT1
I
C
, COLLECTOR CURRENT (mA)
Figure 7. V
CE(sat)
versus I
C
1000
100
10
1
10
100
4
3
2
1
0
0
10
20
30
40
50
1
0.1
0.01
0.001
V
in
, INPUT
VOL
T
AGE (VOL
TS)
V
CE( sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
C ob , CAP
ACIT
ANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
0
20
40
60
80
100
10
1
0.1
0.01
0.001
0
1
2
3
4
5
6
7
8
9
10
100
10
1
0.1
0
10
20
30
40
50
T
A
=75C
25C
25C
f = 1 MHz
l
E
= 0 V
T
A
= 25C
V
CE
= 10 V
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
V
in
, INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input Voltage
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
I
C
/I
B
=10
T
A
= 25C
25C
75C
T
A
= 25C
25C
75C
V
O
= 5 V
T
A
= 25C
25C
75C
V
O
= 0.2 V