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Электронный компонент: MSB710-RT1

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N31/1
MSB710-RT1
PNP General Purpose Amplifier
Transistor Surface Mount
CASE 318D04, STYLE1
S C 5 9
MAXIMUM RATINGS
(T
A
= 2
5
C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
(BR)CBO
60
Vdc
Collector-Emitter Voltage
V
(BR)CEO
50
Vdc
Emitter-Base Voltage
V
(BR)EBO
7.0
Vdc
Collector Current - Continuous
I
C
500
mAdc
Collector Current - Peak
I
C(P)
1.0
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
150
C
Storage Temperature
T
stg
55 ~ +150
C
DEVICE MARKING
The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
COLLECTOR
3
2 1
BASE EMITTER
CRX
1
3
2