N61/1
MSD601RT1
MSD601ST1
NPN General Purpose Amplifier
Transistors Surface Mount
CASE 318D03, STYLE1
S C 5 9
MAXIMUM RATINGS (T
A
= 25C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
(BR)CBO
60
Vdc
Collector-Emitter Voltage
V
(BR)CEO
50
Vdc
Emitter-Base Voltage
V
(BR)EBO
7.0
Vdc
Collector CurrentContinuous
I
C
100
mAdc
Collector CurrentPeak
I
C(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
150
C
Storage Temperature
T
stg
55 ~ +150
C
ELECTRICAL CHARACTERISTICS
(T
A
= 2
5
C)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mAdc, I
B
= 0)
V
(BR)CEO
50
--
Vdc
Collector-Base Breakdown Voltage (I
C
= 10
Adc, I
E
= 0)
V
(BR)CBO
60
--
Vdc
Emitter-Base Breakdown Voltage (I
E
= 10
Adc, I
C
= 0)
V
(BR)EBO
7.0
--
Vdc
Collector-Base Cutoff Current (V
CB
= 45 Vdc, I
E
= 0)
I
CBO
--
0.1
Adc
Collector-Emitter Cutoff Current (V
CE
= 10 Vdc, I
B
= 0)
I
CEO
--
100
nAdc
DC Current Gain
(1)
--
(V
CE
= 10 Vdc, I
C
= 2.0 mAdc)
MSD601-RT1
h
FE1
210
340
MSD601-ST1
290
460
(V
CE
= 2.0 Vdc, I
C
= 100 mAdc)
h
FE2
90
--
Collector-Emitter Saturation Voltage (I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
--
0.5
Vdc
1. Pulse Test: Pulse Width < 300
s, D.C. < 2%.
DEVICE MARKING
The "X" represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
YS
X
Marking Symbol
MSD601RT1
MSD601ST1
YR
X
COLLECTOR
3
2 1
BASE EMITTER
1
3
2
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