I61/3
CASE 31808, STYLE 8
SOT 23 (TO236AB)
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
These devices are designed in the popular PLASTIC PACK-
AGE for high volumerequirements of FM Radio and TV tuning and
AFC, general frequency control andtuning applications.They pro-
vide solidstate reliability in replacement of mechanical tuning
methods. Also available in Surface Mount Package up to 33pF.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance
--
10%
Complete Typical Design Curves
Silicon Tuning Diode
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
M V 2 1 X X MMBV21XXLT1
Unit
Reverse Voltage
V
R
30
Vdc
Forward Current
I
F
200
mAdc
Device Dissipation @T
A
= 25C
P
D
280
225
m W
Derate above 25C
2.8
1.8
mW/C
Junction Temperature
T
J
+150
C
Storage Temperature Range
T
stg
55 to +150
C
DEVICE MARKING
MMBV2101LT1=M4G MMBV2107LT1=4W
MMBV2103LT1=4H MMBV2108LT1=4X
MMBV2105LT1=4U MMBV2109LT1=4J
ELECTRICAL CHARACTERISTICS(T
A
=25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V
(BR)R
30
--
--
Vdc
(I
R
=1.0
Adc)
Reverse Voltage Leakage Current
I
R
--
--
0.1
Adc
(V
R
=25Vdc,T
A
=25C)
Diode Capacitance Temperature Coefficient
T
CC
--
280
--
ppm/C
(V
R
=4.0Vdc,f=1.0MHz)
6 . 8 - 1 0 0 p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
CATHODE
1
ANODE
1
3
2
I62/3
Min
Nom
M a x
Typ
Min
Typ
Max
MMBV2101LT1/MV2101
6.1
6.8
7.5
450
2.5
2.7
3.2
MMBV2103LT1
9.0
10
11
400
2.5
2.9
3.2
MV2104
10.8
12
13.2
400
2.5
2.9
3.2
MMBV2105LT1/MV2105
13.5
15
16.5
400
2.5
2.9
3.2
MMBV2107LT1
19.8
22
24.2
350
2.5
2.9
3.2
MMBV2108LT1/MV2108
24.3
27
29.7
300
2.5
3.0
3.2
MMBV2109LT1/MV2109
29.7
33
36.3
200
2.5
3.0
3.2
MV2111
42.3
47
51.7
150
2.5
3.0
3.2
MV2115
90
100
110
100
2.6
3.0
3.3
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk.
Use the device title and drop the "T1" suffix when ordering any of these devices in bulk.
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
C
T
, Diode Capacitance
V
R
= 4.0 Vdc, f = 1.0 MHz
pF
T
R
, Tuning Ratio
C
2
/C
30
f = 1.0 MHz
Q, Figure of Merit
V
R
= 4.0 Vdc,
f = 50 MHz
PARAMETER TEST METHODS
1. C
T
, DIODE CAPACITANCE
(C
T
= C
C
+ C
J
). C
T
is measured at 1.0 MHz using a
ca-pacitance bridge (Boonton Electronics Model
75A or equivalent).
2. T
R
, TUNING RATIO
T
R
is the ratio of C
T
measured at 2.0 Vdc divided by
C
T
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
ad-mittance bridge at the specified frequency and
substitut-ing in the following equations:
Q =
2
fC
G
(Booton Electronics Model 33As8 or equivalent).Use
Lead Length
1/16".
4.T
CC
,DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
T
CC
is guaranteed by comparing C
T
at
V
R
=4.0Vdc,f=1.0MHz,T
A
= 65
C
with CT at V
R
=4.0Vdc,
f=1.0MHz,T
A
= + 85
C
in the following equation,which
defines TC
C
:
C
T
(+85
C
) C
T
(65
C
)
10
6
TC
C
=
85+65
.
C
T
(25
C
)
~
~
Device
I63/3
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
100
50
20
10
5.0
2.0
1.0
.50
.20
.10
.05
.02
.01
0
5.0
10
15
20
25
30
1.040
1.030
1.020
1.010
1.000
0.990
0.980
0.970
0.960
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
2.0
3.0
5.0
7.0
10
20
30
75
50
25
0
+25
+50
+75
+100
+125
TYPICAL DEVICE CHARACTERISTICS
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance versus Reverse Voltage
T
J
, JUNCTION TEMPERATURE (C)
Figure 2. Normalized Diode Capacitance
versus Junction Temperature
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current versus
Reverse Bias Voltage
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Figure of Merit versus
Reverse Voltage
f, FREQUENCY (MHz)
Figure 5. Figure of Merit versus
Frequency
C
T
, DIODE CAP
ACIT
ANCE (pF)
NORMALIZED DIODE CAP
ACIT
ANCE
I
R
, REVERSE CURRENT (nA)
Q, FIGURE OF MERIT
Q, FIGURE OF MERIT
T
A
= 25C
f = 1.0 MHz
1000
500
200
100
50
20
10
5.0
2.0
1.0
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
MV2115
MMBV2109LT1/MV2109
V
R
= 2.0Vdc
V
R
= 4.0Vdc
V
R
= 30Vdc
T
A
= 125C
T
A
= 75C
T
A
= 25C
T
A
= 25C
f = 50 MHz
MV2115
T
A
= 25C
V
R
= 4.0 Vdc
MV2115
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
MMBV2101LT1/MV2101
MMBV2109LT1/MV2109
MMBV2101LT1/MV2101
MMBV2109LT1/MV2109
NORMALIZED TO C
T
at T
A
= 25C
V
R
= (CURVE)
5000
3000
2000
1000
500
300
200
100
50
30
20
10
10
20
30
50
70
100
200
300
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