EtronTech
EM562161
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
128K x 16 Low Power SRAM
Preliminary, Rev 1.0 07/2001
Features
Single power supply voltage of 2.7V to 3.6V
Power down features using CE1# and CE2
Low operating current : 30mA(max for 55 ns)
Maximum Standby current : 10
A
at 3.6 V
Data retention supply voltage: 1.5V to 3.6V
Direct TTL compatibility for all input and output
Wide operating temperature range: -40
C to 85
C
Package type: 48-ball TFBGA, 6x8mm
Ordering Information
Part Number
Speed I
DDS2
Package
EM562161BC-55
55 ns
10
A
6x8 BGA
EM562161BC-70
70 ns
10
A
6x8 BGA
Pin Description
Symbol
Function
A0 - A16
Address Inputs
DQ0 - DQ15
Data Inputs / Outputs
CE1#, CE2
Chip Enable Inputs
OE#
Output Enable
WE#
Read / Write Control Input
LB#, UB#
Data Byte Control Inputs
GND
Ground
V
DD
Power Supply
NC
No Connection
Overview
The EM562161 is a 2,097,152-bit SRAM organized as
131,072 words by 16 bits. It is designed with advanced
CMOS technology. This Device operates from a single
2.7V to 3.6V power supply. Advanced
circuit technology provides both high speed and low
power. It is automatically placed in low-power mode
when chip enable (CE1#) is asserted high or (CE2) is
asserted low. There are three control inputs. CE1# and
CE2 are used to select the device and for data
retention control, and output enable (OE#) provides
fast memory access. Data byte control pin (LB#,UB#)
provides lower and upper byte access. This device is
well suited to various microprocessor system
applications where high speed, low power and battery
backup are required. And, with a guaranteed operating
range from -40
C to 85
C, the EM562161 can be used
in environments exhibiting extreme temperature
conditions.
Pin Configuration
48-Ball BGA (CSP), Top View
1
2
3
4
5
6
A
B
C
D
E
F
G
H
LB #
O E#
A 0
A1
A2
CE 2
NC
A 8
A 9
A 10
A1 1
NC
DQ 1 5
NC
A 12
A 13
W E #
DQ 7
DQ 1 4
DQ 1 3
A 14
A 15
DQ 5
DQ 6
V DD
DQ 1 2
N C
A 16
DQ 4
G ND
DQ 8
UB #
A 3
A4
CE1 #
DQ 0
DQ 9
DQ 1 0
A 5
A6
DQ 1
DQ 2
GN D
DQ 1 1
A 7
DQ 3
VD D
N C
EtronTech
EM562161
Preliminary
3
Rev 1.0
July 2001
Operating Mode
Mode
CE1# CE2 OE# WE# LB# UB#
DQ0~DQ7 DQ8~DQ15
Power
L
L
DOUT
DOUT
Active
H
L
High-Z
DOUT
Active
Read
L
H
L
H
L
H
DOUT
High-Z
Active
L
L
DIN
DIN
Active
H
L
High-Z
DIN
Active
Write
L
H
X
L
L
H
DIN
High-Z
Active
Output Deselect
L
H
H
H
X
X
High-Z
High-Z
Active
H
X
X
X
X
X
X
L
X
X
X
X
Standby
L
H
X
X
H
H
High-Z
High-Z
Standby
Note: X = don't care. H=logic high. L=logic low.
Absolute Maximum Ratings
Supply voltage, VDD
-0.3 to +4.6V
Input voltages, VIN
-0.3 to +4.6V
Input and output voltages, VI/O
-0.5 to VDD +0.5V
Operating temperature, TOPR
-40 to +85
C
Storage temperature, TSTRG
-55 to +150
C
Soldering Temperature (10s), TSOLDER
240
C
Power dissipation, PD
0.6 W
DC Recommended Operating Conditions (Ta=-40
C to 85
C)
Symbol
Parameter
Min
Typ
Max
Unit
VDD
Power Supply Voltage
2.7
-
3.6
V
VIH
Input High Voltage
2.2
-
VDD + 0.3
(1)
V
VIL
Input Low Voltage
-0.3
(2)
-
0.6
V
VDR
Data Retention Supply Voltage
1.5
-
3.6
V
Note:
(1) Overshoot : VDD +2.0V in case of pulse width
20ns
(2) Undershoot : -2.0V in case of pulse width
20ns
EtronTech
EM562161
Preliminary
4
Rev 1.0
July 2001
DC Characteristics
(Ta = -40
C to 85
C, VDD = 2.7V to 3.6V)
Parameter
Symbol
Test Conditions
Min
Typ* Max Unit
Input low current
IIL
IIN = 0V to VDD
- 1
-
1
A
Output low voltage VOL
IOL = 2.1 mA
-
-
0.4 V
Output high
voltage
VOH
IOH = -1.0 mA
2.2
-
-
V
55 ns
-
15
30
IDD1
Cycle time =
min
70 ns
-
10
25
Operating current
IDD2
VDD = 3.6 V ,
CE1# = VIL and
CE2 = VIH and
IOUT = 0mA
Other Input = VIH / VIL
Cycle time = 1
s
-
-
4
mA
IDDS1 CE1# = VIH or CE2 = VIL
-
-
0.5 mA
Standby current
IDDS2
**
(Note)
CE1#
VDD 0.2V or CE2
0.2V,
or LB# = UB#
VDD 0.2V
-
1
10
A
Notes:
* Typical value are measured at T
a
= 25
C, and not 100% tested.
** In standby mode with CE1#
VDD - 0.2V, these limits are assured for the condition
CE2
V
DD
- 0.2V or CE2
0.2V.
Capacitance (Ta = 25
C; f = 1 MHz)
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Input capacitance
CIN
-
-
10
pF
VIN = GND
Output capacitance
COUT
-
-
10
pF
VOUT = GND
Notes: This parameter is periodically sampled and is not 100% tested.
EtronTech
EM562161
Preliminary
5
Rev 1.0
July 2001
AC Characteristics and Operating Conditions (Ta = -40
C to 85
C, VDD = 2.7V to 3.6V)
Read Cycle
EM562161
-55
-70
Symbol
Parameter
Min Max Min Max
Unit
tRC
Read cycle time
55
-
70
-
tAA
Address access time
-
55
-
70
tCO1
Chip Enable (CE1#) Access Time
-
55
-
70
tCO2
Chip Enable (CE2) Access Time
-
55
-
70
tOE
Output enable access time
-
25
-
35
tBA
Data Byte Control Access Time
-
55
-
70
tLZ
Chip Enable Low to Output in Low-Z
10
-
10
-
tOLZ
Output enable Low to Output in Low-Z
3
-
3
-
tBLZ
Data Byte Control Low to Output in Low-Z
5
-
5
-
tHZ
Chip Enable High to Output in High-Z
-
20
-
25
tOHZ
Output Enable High to Output in High-Z
-
20
-
25
tBHZ
Data Byte Control High to Output in High-Z
-
20
-
25
tOH
Output Data Hold Time
10
-
10
-
ns
Write Cycle
EM562161
-55
-70
Symbol
Parameter
Min Max Min Max
Unit
tWC
Write cycle time
55
-
70
-
tWP
Write pulse width
40
-
55
-
tCW
Chip Enable to end of write
45
-
60
-
tBW
Data Byte Control to end of Write
45
-
60
-
tAS
Address setup time
0
-
0
-
tWR
Write Recovery time
0
-
0
-
tWHZ
WE# Low to Output in High-Z
-
25
-
30
tOW
WE# High to Output in Low-Z
5
-
5
-
tDS
Data Setup Time
25
-
30
-
tDH
Data Hold Time
0
-
0
-
ns
AC Test Condition
Output load : 50pF + one TTL gate
Input pulse level : 0.4V, 2.4V
Timing measurements : 0.5 x V
DD
tR, tF : 5ns
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