Pr
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FEATURES
High Voltage Operation : V
DS
=50V
High Power : 46.5dBm (typ.) @ P3dB
High Efficiency: 60%(typ.) @ P3dB
Linear Gain : 15.0dB(typ.) @ f=2.6GHz
Proven Reliability
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
consistency and broad bandwidth for high power L-band amplifiers with 50V
operation, and gives you higher gain.
This device target applications are low current and wide band applications for
high voltage.
ABSOLUTE MAXIMUM RATINGS
Item Symbol Condition Rating Unit
Drain-Source Voltage V
DS
120 V
Gate-Source Voltage V
GS
Tc=25
o
C
-5 V
Total Power Dissipation P
t
75 W
Storage Temperature T
stg
-65 to +175
o
C
Channel Temperature T
ch
250
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item Symbol Condition Limit Unit
min. Typ. Max.
Pinch-Off Voltage V
p
V
DS
=50V I
DS
=11mA -1.0 -2.0 -3.5 V
Gate-Drain Breakdown Voltage V
GDO
I
GS
=- 5.6 mA
- -350 - V
3dB Gain Compression Power P
3dB
V
DS
=50V TBD 46.5 -
dBm
Drain Efficiency
d
I
DS(DC)
=200mA - 60 - %
Linear Gain G
L
f=2.6GHz
TBD 15.0 - dB
Thermal Resistance R
th
Channel to Case - 2.5 3.0
o
C/W
Edition 1.2
Dec. 2005
1
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25
o
C)
Item Symbol Condition Limit Unit
DC Input Voltage V
DS
50 V
Forward Gate Current I
GF
R
G
=15
<TBD mA
Reverse Gate Current I
GR
R
G
=15
>-2.2
mA
Channel Temperature T
ch
200
o
C
ES/EGN26A030MK
High Voltage - High Power GaN-HEMT
Preliminary
Eudyna GaN-HEMT 30W
Pr
eli
mi
na
ry
Output Power vs. Frequency
V
DS
=50V I
DS(DC)
=200mA
Output Power and Drain Efficiency vs. Input Power
V
DS
=50V I
DS(DC)
=200mA f=2.6GHz
Power Derating Curve
High Voltage - High Power GaN-HEMT
ES/EGN26A030MK
30
32
34
36
38
40
42
44
46
48
50
2.45
2.50
2.55
2.60
2.65
2.70
2.75
Frequency [GHz]
Ou
tp
u
t
Po
wer
[d
B
m
]
Pin=20dBm
Pin=24dBm
Pin=28dBm
Pin=32dBm
Pin=36dBm
30
32
34
36
38
40
42
44
46
48
50
19 21 23 25 27 29 31 33 35 37
Input Power [dBm]
Ou
tp
u
t
Po
wer
[d
B
m
]
0
10
20
30
40
50
60
70
80
90
100
D
r
ai
n
Effci
e
n
cy [%]
0
10
20
30
40
50
60
70
80
0
50
100
150
200
250
300
Case Temperature [
o
C]
T
o
t
al
Po
wer
D
i
ssi
p
asi
o
n
[W
]
Edition 1.2
Dec. 2005
2
Pr
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mi
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MK Package Outline
Metal-Ceramic Hermetic Package
PIN ASSIGNMENT
1 : GATE
2 : SOURCE(Flange)
3 : DRAIN
Unit : mm
4
Edition 1.2
Dec. 2005
High Voltage - High Power GaN-HEMT
ES/EGN26A030MK
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