Features
Up to 3 Gb/s high speed operation
Positive thermal coefficient of modulation current
Differential ECL compatible interface
-5.2 V single power supply
Up to 50 mA p-p modulation current
Up to 50 mA bias current
Maximum bias current preset control
Low-cost 18-terminal LCC package
Applications
Laser diode driver of an optical transmitter circuit up to 3 Gb/s
Functional Description
The F0513005L is a high performance GaAs integrated laser diode driver for use in an
optical transmitter circuit up to 3 Gb/s NRZ data rate. The F0513005L typically specifies rise
time and fall time of 140 psec (10 % - 90 %). It features single -5.2 V supply operation, 1 to
50 mA presettable bias current and up to 50 mA modulation current while dissipating 650
mW is typical. A choice of three packages are available to match various application re-
quirements: an 18-terminal leadless chip carrier (LCC) called F0513005L, an 18-lead metal-
based flat package (MFP) called F0513005M, and a 20-lead plastic-molded QFP package
called F0513005S.
01.08.28
Laser Diode Driver
3 Gb/s NRZ Data Rate
F0513005L
F0513005L
3 Gb/s Laser Diode Driver
Absolute Maximum Ratings
T
a
= 25
C, unless specified
Recommended Operating Conditions
T
a
= 25
C, V
SS
= - 5.2 V, unless specified
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Parameter
Symbol
Value
Units
Min.
Typ.
Max.
Supply Voltage
-5.5
-5.2
-5.0
V
Output Voltage
V
OUT1
, V
OUT2
-2.0
-1.0
0
V
Ambient Operating Temperature
Ta
0
25
70
C
V
SS
3 Gb/s Laser Diode Driver
F0513005L
Electrical Characteristics
T
a
= 25
C, V
SS
= - 5.2 V, unless specified
(1) except modulation current
(2) IMTC = 100
[ I
M
(T
a
= 70
C) - I
M
(T
a
= 0
C) ] / I
M
(T
a
= 25
C) / 70
NOTES:
1. Modulation circuit on: V
IN1
= - 1.7 V, V
IN2
= - 0.9 V
2. Modulation circuit off: V
IN1
= - 0.9 V, V
IN2
= - 1.7 V
3. Bias circuit on: V
APC1
= 0 V, V
APC2
= - 2.5 V
4. Bias circuit off: V
APC1
= - 2.5 V, V
APC2
= 0 V
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=
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=
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2
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2
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V
9
.
1
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=
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5
1
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1
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V
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V
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1
-
=
2
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V
9
.
0
-
=
V
1
C
P
A
V
,
V
5
.
2
-
=
2
C
P
A
V
0
=
V
M
V
,
V
9
.
3
-
=
B
V
2
.
5
-
=
0
5
-
-
A
m
I
N
I
M
M
V
1
N
I
V
,
V
7
.
1
-
=
2
N
I
V
9
.
0
-
=
V
1
C
P
A
V
,
V
5
.
2
-
=
2
C
P
A
V
0
=
V
M
V
,
V
5
.
2
-
=
B
V
2
.
4
-
=
-
-
1
A
m
I
M
)
2
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if
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T
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C
T
M
I
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T
(
A
m
0
5
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t
5
2
=
a
)
C
5
2
=
T
a
C
0
7
o
t
0
=
0
-
6
.
0
C
/
%
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M
B
V
1
N
I
V
,
V
9
.
0
-
=
2
N
I
V
7
.
1
-
=
V
1
C
P
A
V
,
V
0
=
2
C
P
A
V
5
.
2
-
=
V
M
V
,
V
2
.
5
-
=
B
V
2
.
4
-
=
0
5
-
-
A
m
I
N
I
M
B
V
1
N
I
V
,
V
9
.
0
-
=
2
N
I
V
7
.
1
-
=
V
1
C
P
A
V
,
V
5
.
2
-
=
2
C
P
A
V
0
-
=
V
M
V
,
V
2
.
5
-
=
B
V
2
.
5
-
=
-
-
1
A
m
e
m
i
T
e
s
i
R
r
t
5
2
=
L
R
%
0
9
-
%
0
1
-
-
0
0
2
s
p
e
m
i
T
ll
a
F
f
t
5
2
=
L
R
%
0
9
-
%
0
1
-
-
0
0
2
s
p
F0513005L
3 Gb/s Laser Diode Driver
12
13
14
15
16
18
11
10
9
8
7
6
5
4
3
2
1
17
No.1 LEAD IDENTIFIER
Block Diagram
Pin Assignments (Bottom View)
Pin Descriptions
1
OUT1
Output
2
NC
No Connection
3
V
APC1
APC Signal Input
4
V
B
Maximum Bias Current (I
BMAX
)Setting
Voltage
5
V
SS
Supply Voltage
6
GND
Supply Voltage
7
V
M
Modulation Current Control Voltage
8
V
APC2
APC Reference Voltage
9
NC
No Connection
10
OUT2
Output
11
NC
No Connection
12
V
IN2
Differential Mode Input
13
GND
Supply Voltage
14
NC
No Connection
15
NC
No Connection
16
V
SS
Supply Voltage
17
V
IN1
Differential Mode Input
18
GND
Supply Voltage
VIN2
VIN1
Input
Buffer
Switching
Section
Bias Setting
Section
Level
Shifter
VAPC1
VAPC2
VSS
VM
VB
GND
OUT1 OUT2
VSS
GND
+
-
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