Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS
10
40
85
45
65
-
-0.1
-1.0
-2.0
-3.0
-
-
-
0.30
0.40
14.0
15.5
-
VDS = 2V, VGS = 0V
VDS = 2V, IDS =10mA
VDS = 2V, IDS =1mA
VDS = 2V, IDS = 10mA,
f = 4GHz
IGS = -10A
mA
mS
V
V
dB
dB
gm
Vp
VGSO
NF
Gas
Condition
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Note: RF parameters for LG devices are measured on a sample basis as follows:
Lot qty.
Sample qty.
Accept/Reject
1200
or
less
125
(0,1)
1201
to
3200
200
(0,1)
3201
to 10000
315
(1,2)
10001
or
over
500
(1,2)
AVAILABLE CASE STYLES: LG
Thermal Resistance
-
220
300
Rth
Channel to Case
C/W
1
Edition 1.1
July 1999
FHC40LG
Super Low Noise HEMT
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
3.5
-3.0
290
-65 to +175
175
Note
V
V
mW
C
C
Ptot
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with
gate resistance of 4000.
3. The operating channel temperature (Tch) should not exceed 80C.
FEATURES
Low Noise Figure: 0.3dB (Typ.)@f=4GHz
High Associated Gain: 15.5dB (Typ.)@f=4GHz
Lg 0.15m, Wg = 280m
Gold Gate Metallization for High Reliability
Cost Effective Ceramic Microstrip (SMT) Package
Tape and Reel Available
DESCRIPTION
The FH40LG is a Super High Electron Mobility Transistor
(SuperHEMT
TM
) intended for general purpose, ultra-low noise and
high gain amplifiers in the 2-12GHz frequency range. This device is
packaged in a cost effective, low parasitic, hermetically sealed
metal-ceramic package for high volume telecommunication, DBS,
TVRO, VSAT or other low noise applications.
Fujitsu's stringent Quality Assurance Program assures the highest
reliability and consistent performance.
2
FHC40LG
Super Low Noise HEMT
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
100
150
200
50
0
300
250
0
50
100
150
200
1
2
3
4
Ambient Temperature (C)
Drain-Source Voltage (V)
Total Power Dissipation (mW)
50
40
30
20
10
0
Drain Current (mA)
VGS =0V
-0.2V
-0.6V
-0.8V
-1.0V
-0.4V
3
FHC40LG
Super Low Noise HEMT
opt
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
50
25
10
100
1.0
0.5
1.5
2.0
2.5
3.0dB
250
TYPICAL NOISE FIGURE CIRCLE
f=4GHz
VDS=2V
IDS=10mA
opt=0.8757
Rn/50=0.18
NFmin=0.30dB
Freq.
(GHz)
(MAG)
(ANG)
NFmin
(dB)
Rn/50
opt
2
4
6
8
10
12
14
16
18
0.86
0.87
0.86
0.81
0.74
0.63
0.49
0.33
0.13
31.0
57.0
83.0
108.0
132.0
156.0
179.0
-158.0
-136.0
0.28
0.30
0.34
0.39
0.47
0.55
0.67
0.81
1.00
0.19
0.18
0.13
0.09
0.05
0.03
0.04
0.07
0.11
NOISE PARAMETERS
VDS=2V, IDS=10MA
Ga(max) AND |S21| vs. FREQUENCY
20
15
10
5
0
4
6
8 1012 18 20
Frequency (GHz)
Gain (dB)
VDS=2V
IDS=10mA
|S21|
Ga(max)
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
+90
0
-90
S21
S12
2
4
2
6
8
2
2
2
4
4
6
6
4
4
10
8
8
10
16
14
14
12
12
15
6
6
8
8
10
10
16
14
12
12
16
0.04
0.06
0.08
250
100
25
10
50
1GHz
1GHz
1GHz
1GHz
18GHZ
18GHZ
18GHZ
18GHZ
SCALE FOR |S12|
0.02
SCALE FOR |S
21
|
S-PARAMETERS
VDS = 2V, IDS = 10mA
FREQUENCY
S11
S21
S12
S22
(GHZ)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1.0
0.980
-20.6
5.620
159.7
0.017
75.8
0.541
-17.8
2.0
0.942
-40.7
5.401
140.7
0.033
61.6
0.523
-35.0
3.0
0.887
-59.4
5.051
122.6
0.045
49.5
0.501
-51.2
4.0
0.838
-76.9
4.685
105.8
0.054
38.5
0.480
-66.6
5.0
0.786
-93.2
4.334
89.9
0.060
28.5
0.461
-81.3
6.0
0.742
-108.3
3.984
74.9
0.063
20.2
0.448
-95.4
7.0
0.705
-122.1
3.654
60.6
0.063
12.9
0.449
-108.9
8.0
0.672
-133.7
3.340
47.6
0.063
7.2
0.463
-120.3
9.0
0.651
-143.9
3.110
35.8
0.062
3.2
0.481
-130.1
10.0
0.633
-153.9
2.954
23.7
0.061
-0.2
0.498
-138.8
11.0
0.611
-164.1
2.786
11.8
0.059
-2.9
0.513
-147.6
12.0
0.595
-174.8
2.641
0.0
0.058
-5.1
0.535
-157.0
13.0
0.588
176.0
2.518
-11.6
0.057
-6.7
0.562
-165.3
14.0
0.579
167.6
2.412
-23.0
0.057
-7.9
0.597
-172.8
15.0
0.569
159.3
2.342
-34.6
0.057
-10.1
0.634
-179.7
16.0
0.555
150.5
2.290
-46.6
0.058
-12.9
0.667
173.6
17.0
0.536
140.3
2.272
-59.4
0.059
-17.0
0.697
166.4
18.0
0.525
129.9
2.233
-72.6
0.060
-22.4
0.727
158.8
FHC40LG
Super Low Noise HEMT
Download S-Parameters, click here
5
0.5
(0.02)
1.0
(0.039)
1.3 Max
(0.051)
0.1
(0.004)
1.50.3
(0.059)
1.780.15
(0.07)
1.50.3
(0.059)
4.780.5
Case Style "LG"
Metal-Ceramic Hermetic Package
Unit: mm(inches)
1. Gate
2. Source
3. Drain
4. Source
1.5
0.3
(0.059)
1.78
0.15
(0.07)
1.5
0.3
(0.059)
4.78
0.5
1
2
3
4
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
Do not put these products into the mouth.
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
FHC40LG
Super Low Noise HEMT
SuperHEMT
TM
is a trademark of Fujitsu Limited.
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