Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS
10
30
60
35
50
-
-0.1
-0.7
-1.5
-3.0
-
-
-
0.45
0.50
11.0
13.0
-
VDS = 2V, VGS =0V
VDS = 2V, IDS =10mA
VDS = 2V, IDS =1mA
VDS = 2V,
IDS = 10mA,
f = 12GHz
IGS = -10A
mA
mS
V
V
dB
dB
gm
Vp
VGSO
NF
FHX13LG
FHX14LG
Gas
Noise Figure
Associated Gain
-
0.55
0.60
11.0
13.0
-
dB
dB
NF
Gas
Condition
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Note: RF parameters for LG devices are measured on a sample basis as follows:
Lot qty.
Sample qty.
Accept/Reject
1200
or
less
125
(0,1)
1201
to
3200
200
(0,1)
3201
to
10000
315
(1,2)
10001
or
over
500
(1,2)
AVAILABLE CASE STYLES: LG
Channel to Case
Thermal Resistance
-
300
400
C/W
Rth
1
Edition 1.1
July 1999
Item
Symbol
Unit
Drain-Source Voltage
VDS
V
3.5
Gate-Source Voltage
VGS
V
-3.0
Total Power Dissipation
Pt*
mW
180
Storage Temperature
Tstg
C
-65 to +175
Channel Temperature
Tch
C
175
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000.
3. The operating channel temperature (Tch) should not exceed 80C.
FEATURES
Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13)
High Associated Gain: 13.0dB (Typ.)@f=12GHz
Lg 0.15m, Wg = 200m
Gold Gate Metallization for High Reliability
Cost Effective Ceramic Microstrip (SMT) Package
Tape and Reel Packaging Available
FHX13LG, FHX14LG
Super Low Noise HEMT
DESCRIPTION
The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT
TM
)
intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz
frequency range. The devices are packaged in cost effective, low parasitic, hermetically
sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or
other low noise applications.
Fujitsu's stringent Quality Assurance Program assures the highest reliability and
consistent performance.
4
FHX13LG, FHX14LG
Super Low Noise HEMT
NOISE PARAMETERS
FHX13LG
VDS=2V, IDS=10mA
Freq.
(GHz)
opt
(MAG) (ANG)
NFmin
(dB)
Rn/50
2
4
6
8
10
12
14
16
18
0.96
0.92
0.86
0.79
0.71
0.61
0.50
0.38
0.24
29
57
83
107
129
150
168
-175
-161
0.33
0.34
0.35
0.37
0.40
0.45
0.53
0.63
0.83
0.22
0.20
0.15
0.11
0.07
0.04
0.04
0.06
0.10
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
opt
1.0
2.0
2.5
3.0
1.5
10
25
50
100
f = 12 GHz
VDS = 2V
IDS = 10mA
opt = 0.61150
Rn/50 = 0.04
NFmin = 0.45dB
TYPICAL NOISE FIGURE CIRCLE
FHX13LG
20
15
10
5
0
4
6
8
10 12
20
VDS = 2V
IDS = 10mA
Ga(max)
Frequency (GHz)
Gain (dB)
Ga(max) & |S21|2 vs. FREQUENCY
|S21|
2
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